DISCRETE SEMICONDUCTORS
DATA SHEET
PEMD2; PIMD2; PUMD2
NPN/PNP resistor-equipped
transistors; R1 = 22 kΩ, R2 = 22 kΩ
Product specification
Supersedes data of 2003 Jun 06
2004 Apr 21
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
FEATURES
•
Built-in bias resistors
•
Simplifies circuit design
•
Reduces component count
•
Reduces pick and place costs.
APPLICATIONS
•
General purpose switching and amplification
•
Inverter and interface circuits
•
Circuit driver.
DESCRIPTION
PEMD2; PIMD2; PUMD2
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
TR1
TR2
R1
R2
PARAMETER
collector-emitter
voltage
output current (DC)
NPN (PIMD2: PNP)
PNP (PIMD2: NPN)
bias resistor
bias resistor
TYP.
−
−
−
−
22
22
MAX.
50
100
−
−
−
−
UNIT
V
mA
−
−
kΩ
kΩ
NPN/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE
NUMBER
PEMD2
PIMD2
PUMD2
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
PACKAGE
MARKING CODE
PHILIPS
SOT666
SOT457
SOT363
EIAJ
−
SC-74
SC-88
D4
M5
D*2
(1)
−
PUMB1
PNP/PNP
COMPLEMENT
PEMB1
−
PUMH1
NPN/NPN
COMPLEMENT
PEMH1
2004 Apr 21
2
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PEMD2; PIMD2; PUMD2
PINNING
TYPE NUMBER
PEMD2
PUMD2
6
5
4
R1
TR1
R2
1
Top view
2
3
1
2
3
MAM468
SIMPLIFIED OUTLINE AND SYMBOL
PIN
6
5
4
DESCRIPTION
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
R2
TR2
R1
4
5
6
PIMD2
handbook, halfpage
6
5
4
R1
TR2
R2
5
4
1
2
3
emitter TR2
base TR2
collector TR1
emitter TR1
base TR1
collector TR2
6
R2
TR1
R1
4
5
6
1
Top view
2
3
1
2
3
MAM476
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PEMD2
PIMD2
PUMD2
−
−
−
DESCRIPTION
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
VERSION
SOT666
SOT457
SOT363
2004 Apr 21
3
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
PEMD2; PIMD2; PUMD2
MIN.
−
−
−
−
−
−
−
−
−
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
negative
V
I
input voltage TR2
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT363
SOT457
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT457
SOT666
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
T
amb
≤
25
°C
note 1
note 1
notes 1 and 2
−
−
−
300
600
300
mW
mW
mW
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
note 1
note 1
notes 1 and 2
−
−
−
−65
−
−65
200
300
200
+150
150
+150
mW
mW
mW
°C
°C
°C
+10
−40
100
100
V
V
mA
mA
+40
−10
V
V
open emitter
open base
open collector
50
50
10
V
V
V
2004 Apr 21
4
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
THERMAL CHARACTERISTICS
SYMBOL
Per transistor
R
th(j-a)
thermal resistance from junction to ambient
SOT363
SOT457
SOT666
Per device
R
th(j-a)
thermal resistance from junction to ambient
SOT363
SOT457
SOT666
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
T
amb
≤
25
°C
note 1
note 1
notes 1 and 2
T
amb
≤
25
°C
note 1
note 1
notes 1 and 2
PARAMETER
PEMD2; PIMD2; PUMD2
CONDITIONS
VALUE
UNIT
625
417
625
K/W
K/W
K/W
416
208
416
K/W
K/W
K/W
MIN.
−
−
−
−
60
−
−
2.5
15.4
0.8
TYP.
−
−
−
−
−
−
1.1
1.7
22
1
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
TR1 (NPN)
TR2 (PNP)
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
−
−
−
−
2.5
3
pF
pF
V
CB
= 50 V; I
E
= 0 A
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
V
CE
= 5 V; I
C
= 100
µA
V
CE
= 0.3 V; I
C
= 5 mA
100
1
50
180
−
150
0.8
−
28.6
1.2
V
V
V
kΩ
nA
µA
µA
µA
2004 Apr 21
5
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
