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RN1105MFV(TPL3)

产品描述transistors switching - resistor biased 100ma 50volts 3pin 2.2K x 47kohms
产品类别分立半导体    晶体管   
文件大小1014KB,共9页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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RN1105MFV(TPL3)概述

transistors switching - resistor biased 100ma 50volts 3pin 2.2K x 47kohms

RN1105MFV(TPL3)规格参数

参数名称属性值
厂商名称Toshiba(东芝)
Reach Compliance Codeunknown
Is SamacsysN
Base Number Matches1

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RN1101MFV∼RN1106MFV
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1101MFV,RN1102MFV,RN1103MFV
RN1104MFV,RN1105MFV,RN1106MFV
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
0.8 ± 0.05
0.22 ± 0.05
1.2 ± 0.05
0.32 ± 0.05
0.80 ± 0.05
A wide range of resistor values is available for use in various circuits.
1.2 ± 0.05
1
Complementary to the RN2101MFV to RN2106MFV
0.4
0.4
1
3
2
0.13 ± 0.05
Equivalent Circuit and Bias Resistor Values
Type No.
RN1101MFV
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
0.5 ± 0.05
1. BASE
VESM
JEDEC
JEITA
TOSHIBA
2. EMITTER
3. COLLECTOR
2-1L1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1101MFV to 1106MFV
RN1101MFV to 1106MFV
RN1101MFV to 1104MFV
RN1105MFV, 1106MFV
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
50
50
10
5
100
150
150
−55
to 150
Weight: 1.5 mg (typ.)
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4
mm
×
25.4 mm
×
1.6 mm)
Pad Dimension(Reference)
1.15
0.5
unit mm
0.45
0.4
0.45
0.4
0.4
1
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