BCP51 ... BCP53
BCP51 ... BCP53
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Power dissipation
Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
3.5
±0.2
PNP
1.3 W
SOT-223
0.04 g
Version 2006-06-26
6.5
3
±0.2
±0.1
1.65
4
Type
Code
1
0.7
2.3
2
3.25
3
Dimensions - Maße [mm]
1=B
2/4 = C
3=E
Maximum ratings (T
A
= 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- V
CEO
- V
CBO
- V
EBO
P
tot
- I
C
- I
CM
- I
BM
T
j
T
S
7
±0.3
Grenzwerte (T
A
= 25°C)
BCP51
45 V
45 V
BCP52
60 V
60 V
5V
1.3 W
1
)
1A
1.5 A
200 mA
-55...+150°C
-55…+150°C
BCP53
80 V
100 V
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
- V
CE
= 2 V, - I
C
= 5 mA
- V
CE
= 2 V, - I
C
= 150 mA
all groups
Group -6
Group -10
Group -16
all groups
h
FE
h
FE
h
FE
h
FE
h
FE
- V
CEsat
- V
BE
25
40
63
100
25
–
–
Kennwerte (T
j
= 25°C)
Typ.
Max.
–
–
–
–
–
–
100
160
250
–
0.5 V
1V
- V
CE
= 2 V, - I
C
= 500 mA
- I
C
= 500 mA, - I
B
= 50 mA
Base-Emitter voltage – Basis-Emitter-Spannung
2
)
- I
C
= 500 mA, - I
B
= 50 mA
1
2
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
2
)
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
http://www.diotec.com/
© Diotec Semiconductor AG
1
BCP51 ... BCP53
Characteristics (T
j
= 25°C)
Min.
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- V
CB
= 30 V, (E open)
- V
CB
= 30 V, T
j
= 125°C, (E open)
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- V
EB
= 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
DC current gain ratio of the complementary pairs
Verhältnis der Stromverstärkungen komplementärer Paare
l I
C
l = 150 mA, l V
CE
l = 2 V
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
h
FE1
/h
FE2
R
thA
R
thS
–
–
< 93 K/W
1
)
< 27 K/W
BCP54 ... BCP56
1.6
f
T
–
120 MHz
–
- I
EB0
–
–
100 nA
- I
CB0
- I
CB0
–
–
–
–
100 nA
10 µA
Kennwerte (T
j
= 25°C)
Typ.
Max.
120
[%]
100
80
60
40
20
P
tot
0
0
T
A
50
100
150
[°C]
Power dissipation versus ambient temperature
1
)
Verlustleistung in Abh. von d. Umgebungstemp.
1
)
1
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
2
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