DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. FSDP-103-1B
1 AMP FAST RECOVERY SILICON DIODES
FEATURES
Low cost
Low leakage
Low forward voltage drop
MECHANICAL SPECIFICATION
ACTUAL SIZE OF
DO-41 PACKAGE
SERIES RP100 - RP110
DO - 41
LL
BD (Dia)
High current capacity
Fast switching for high efficiency
BL
Color Band
Denotes
Cathode
RoHS COMPLIANT
MECHANICAL DATA
LL
Case: JEDEC DO-41, molded epoxy (U/L Flammability Rating 94V-0)
Terminals: Plated axial leads
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Color band denotes cathode
Mounting Position: Any
Weight: 0.012 Ounces (0.34 Grams)
LD (Dia)
Sym
BL
BD
LL
LD
Minimum
In
mm
0.160
0.103
1.00
0.028
4.1
2.6
25.4
0.71
Maximum
In
mm
5.2
0.205
0.107
0.034
2.7
0.86
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
2 £ ¥ # )
HG A 6F 3§©! # ©$©! £ ¡ #§1 7¨©§©& 6! ¤9 £ ¤§)§¡ ¡ #3©E
!
1 ¡ %
" ) &
2 1 ¡ %
©§& 6! ¤9 £ ©©¥ 3#3&§ ¤9 §¨ ¨ ! # 7 DB©A @ ! 9 8(©0 ©§' 7©!§¨ ¡§©6! ©¥ 54
) $ 1 ¤
! £ ¤
C
7 ¡ % ¡
' " % ¦ ¤
2 1 ¤ ) ! ¨ ¤ # ! £ & ¨ % ¥ $ #
3§ ¤! 0 §§§"©! ¨ ( ©§' §§¨ ! ©! $ £ ¡ #©§" §! ©£ ! © £ ©§¥ ¤ £ ¡¢
! £ ¥ ¤ ¡ ¡ ¨ ¦
PARAMETER (TEST CONDITIONS)
Series Number
SYMBOL
Ë Ë Ê
5HÉ¡È
RATINGS
ì ë ë ê è ç æ ä â á à Þ Ü
¢5H¡é¢å¡ã¢ß¡ÝÛ¢¡Ö×8¢ÒÑ6¢ÎÌ
Ú Ù Ø
Õ Ô Ó Ð Î Ï Í
UNITS
H25
~ }
u | { y v u
8¢hzx wt s
Operating and Storage Temperature Range
T T
» 3D 55DD¢ 5¢ ¢¢3¹¢¢DD¢ª
¶ º
µ ¸ ¨ ¨ ª
¢¢¡3 ¢D ¢Dµ3 D 5¢³HDD ¢3D¢®
µ · ¶ ¦
µ
´ ´ ² ± ° ¯ ¯
© ©
¬ ¢ 35 ¬D«Dª D¨§¢ 5¢¢ ¥ 3D ¥¢¢ ¢5z D ¢¡5 5¢D ¢ 3¢ zD¢¢ 3 53 D¢ ¢¢3 68¾H¼
©
¦ ¤ £ ¢
Á À ¿ ½
b5Y`¢W
a
X
x
Typical Junction Capacitance (Note 2)
C
r
¢q
VDT
U
Typical Thermal Resistance, Junction to Ambient (Note 1)
R
'
£&
6Q
R
I
°C/W
pF
°C
r
Å
Ä
Maximum Average DC Reverse Current
At Rated DC Blocking Voltage
@ T = 25 C
@ T = 100 C
p
o
n
6S
S
Maximum Reverse Recovery Time (I =0.5A, I =1A, I
=0.25A)
Ã
Â
T
%
¦#$" !£¦
¦£©
m
l5k
t
5s
Maximum Forward Voltage at 1 Amp DC
hÇ
Ç
Ç
Æ
V
j h
i
g
f
w v
¢u
I
c
I
e
Average Forward Rectified Current @ T = 75 C
(Lead length = 0.375 in. (9.5 mm))
Peak Forward Surge Current ( 8.3 mSec single half sine wave
superimposed on rated load)
6hg
i g
Maximum Peak Recurrent Reverse Voltage
P
I
V
¨££¨¢§
¨
ÿ ÿ
8þ
d d
8
8
ø ø
¢÷
ò
ñ
6d
f e
Maximum RMS Voltage
V
¥¦£¤
¥
½ ü
88û
8¢
ö
õ
ð
ï
q
hp
Maximum DC Blocking Voltage
V
¡££¡¢
¡
ú ú
8ù
8
8y
ô ô
¢ó
î
í
VOLTS
AMPS
VOLTS
nS
A
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. FSDP-103-2B
1 AMP FAST RECOVERY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES RP100 - RP110
1.2
Average Forward Current, Io
(Amperes)
0.8
0.6
0.4
FIGURE 1. FORWARD CURRENT DERATING CURVE
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
t65s
t
Instantaneous Forward Current
(Amperes)
1.0
Capacitance, pF
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC
W
W
Reverse Voltage, (Volts)
FIGURE 4. TYPICAL JUNCTION CAPACITANCE
0.5
(+)
D.U.T.
(-)
0.0
(-)
W
(+)
-0.5
FIGURE 5. REVERSE RECOVERY TEST SETUP AND TIME CHARACTERISTIC
Y X W V U ST R Q IP H
H26
Ì
¢Ë
Ê
½ È Ç Å
¢É £¹ ¢Æ5rÄpà Â
º Á ¿ º » » º
¢¬Àh¾½ ¼ p¬¦¹
-1.0
s25!!r 52 ¡ s ® 2«¬ © 2§ ¶ !s ¡ r p5 ´
¡ ² ± ¶ ¸ ¢ ® ¤ ¦ ª · ± ¨ ¦ ¡ ¥ ¤ ¢
µ ª © ¡ ² ± ° ¯
5s´ ´ ³255¦!¢r 52 ª¡ ¬25¤ © 2§ ¡¥ 2s!s ¡ r p5
® ¤ ¦
« ª ¨ ¦
¤ £ ¢
p55¦¢
sÍ
Í
T
i
5h
g ¢e
f
0.01
0.4
d
r ¢p
q
¢¢!hg ¢!f5
i g e d
m
66yy 6 $¢ ¦
v
k x v
lj
6ywu
0.1
4 4
653
120
)
Ambient Temperature, C
G
0
0
50
100
150
F
5E
0.2
t
65w
w¢5w r£ 6!$yy~ ¢|
}
{ z x u t o q o
y 5wvpsrpn
@
¢9
1.0
Peak Forward Surge Current
(Amperes)
c
2b
(
a2`
867
B6A
D6C
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