SUR3080PT thru SUR30120PT
Ultra Fast Recovery Epitaxial Diodes
A
C(TAB)
A
C
A
C
A
Dimensions TO-247AD
Dim.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
A=Anode, C=Cathode, TAB=Cathode
SUR3080PT
SUR30100PT
SUR30120PT
V
RSM
V
800
1000
1200
V
RRM
V
800
1000
1200
J
K
L
M
N
Symbol
I
FRMS
I
FAVM
I
FRM
Test Conditions
T
VJ
=T
VJM
T
C
=100
o
C; rectangular, d=0.5
t
p
<10us; rep. rating, pulse width limited by T
VJM
T
VJ
=45
o
C
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
Maximum Ratings
25
15
150
75
80
65
70
28
27
21
20
-40...+150
150
-40...+150
Unit
A
I
FSM
T
VJ
=150
o
C
T
VJ
=45
o
C
A
It
2
T
VJ
=150 C
o
A
2
s
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
=25
o
C
Mounting torque
o
C
78
0.4...0.6
2
W
Nm
g
SUR3080PT thru SUR30120PT
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=25
o
C; V
R
=0.8
.
V
RRM
T
VJ
=125
o
C; V
R
=0.8
.
V
RRM
I
F
=15A; T
VJ
=150
o
C
T
VJ
=25
o
C
For power-loss calculations only
T
VJ
=T
VJM
Characteristic Values
typ.
max.
250
150
4
2.2
2.6
1.65
46.2
1.6
0.5
60
Unit
uA
uA
mA
V
V
m
K/W
I
R
V
F
V
TO
r
T
R
thJC
R
thCK
R
thJA
t
rr
I
RM
I
F
=1A; -di/dt=50A/us; V
R
=30V; T
VJ
=25
o
C
_
V
R
=540V; I
F
=15A; -di
F
/dt=100A/us; L<0.05uH; T
VJ
=100
o
C
50
6.5
70
7.2
ns
A
FEATURES
* International standard package
JEDEC TO-247AD
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low I
RM
-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
SUR3080PT thru SUR30120PT
Ultra Fast Recovery Epitaxial Diodes
30
A
25
20
15
10
5
0
0
1
V
F
2
3
V
4
T
VJ
=25°C
T
VJ
=100°C
T
VJ
=150°C
3.0
µC
2.5
2.0
1.5
1.0
max.
0.5
0.0
1
10
-di
F
/dt
100 A/µs 1000
typ.
T
VJ
=100°C
V
R
= 540V
I
RM
30
T
VJ
=100°C
A V =540V
R
25
max.
20
15
10
5
0
0
100
200
-di
F
/dt
I
F
Q
r
I
F
=11A
I
F
=22A
I
F
=11A
I
F
=5.5A
I
F
=11A
I
F
=22A
I
F
=11A
I
F
=5.5A
typ.
300
A/µs
400
Fig. 1 Forward current
versus voltage drop.
1.4
1.2
1.0
K
f
Fig. 2 Recovery charge versus -di
F
/dt.
Fig. 3 Peak reverse current versus
-di
F
/dt.
60
V
50
40
30
t
fr
20
400
V
FR
1200
ns
1000
800
t
fr
600
1.0
µs
0.8
T
VJ
=100°C
V
R
=540V
I
RM
0.8
0.6
t
rr
max.
0.6
I
F
=11A
I
F
=22A
I
F
=11A
I
F
=5.5A
V
FR
Q
R
0.4
0.4
0.2
0.2
0.0
0
40
T
J
80
120 °C 160
0.0
0
100
200
-di
F
/dt
300 A/µs 400
typ.
10
0
0
100
200
di
F
/dt
T
VJ
=125°C
I
F
=11A
300 A/µs 400
200
0
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -di
F
/dt.
Fig. 6 Peak forward voltage
versus di
F
/dt.
Fig. 7 Transient thermal impedance junction to case.
FPGA/CPLD
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