PD-91866B
IRF7663
HEXFET
®
Power MOSFET
q
q
q
q
q
q
Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
S
1
8
7
A
D
D
D
D
S
S
G
2
V
DSS
= -20V
3
6
4
5
R
DS(on)
= 0.020Ω
T op V ie w
Description
New trench HEXFET
®
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8™ package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
MICRO8™
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-8.2
-6.6
-66
1.8
1.15
10
115
± 12
-55 to + 150
Units
V
A
W
mW/°C
mJ
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
70
Units
°C/W
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1
5 /25/00
IRF7663
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-20
–––
–––
–––
-0.60
14.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.01
–––
–––
–––
–––
–––
–––
–––
–––
30
5.0
7.0
11
100
125
172
2520
615
375
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250uA
––– V/°C Reference to 25°C, I
D
= -1mA
0.020
V
GS
= -4.5V, I
D
= -7.0A
Ω
0.040
V
GS
= -2.5V, I
D
= -5.1A
-1.2
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -7.0A
-1.0
V
DS
= -16V, V
GS
= 0V
µA
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 70°C
-100
V
GS
= -12V
nA
100
V
GS
= 12V
45
I
D
= -6.0A
7.5
nC V
DS
= -10V
10.5
V
GS
= -5.0V
–––
V
DD
= -10V
–––
I
D
= -6.0A
ns
–––
R
G
= 6.2Ω
–––
R
D
= 1.64Ω
–––
V
GS
= 0V
–––
pF
V
DS
= -10V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
70
50
-1.8
A
-66
-1.2
105
75
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -7.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.5A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Starting T
J
= 25°C, L = 17.8mH
R
G
= 25Ω, I
AS
= -3.6A. (See Figure 10)
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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IRF7663
100
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
TOP
100
-I
D
, Drain-to-Source Current (A)
-2.25V
10
-I
D
, Drain-to-Source Current (A)
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
TOP
-2.25V
10
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 25
°
C
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -8.2A
-I
D
, Drain-to-Source Current (A)
1.5
1.0
0.5
10
2.0
V DS = -15V
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7663
4000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
10
I
D
= -6.0A
V
DS
= -10V
-V
GS
, Gate-to-Source Voltage (V)
8
3000
C, Capacitance(pF)
Ciss
2000
6
4
1000
Coss
Crss
2
0
1
10
100
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
50
-VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
SD
, Reverse Drain Current (A)
-I
D
, Drain Current (A)
I
T
J
= 25
°
C
100
10us
10
T
J
= 150
°
C
100us
10
1ms
1
0.5
V
GS
= 0 V
1.0
1.5
2.0
2.5
1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7663
9.0
300
7.5
E
AS
, Single Pulse Avalanche Energy (mJ)
240
ID
TOP
-1.6A
-2.9A
BOTTOM -3.6A
-I
D
, Drain Current (A)
6.0
180
4.5
120
3.0
1.5
60
0.0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
, Case Temperature ( ° C)
Starting T
J
, Junction Temperature (
°
C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
100
Thermal Response (Z
thJC
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
100
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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