P0120007P
250mW GaAs Power FET (Pb-Free Type)
♦Features
· Up to 2.7 GHz frequency band
· Beyond +22 dBm output power
· Up to +41dBm Output IP3
· High Drain Efficiency
· 15dB Gain at 2.1GHz
· SOT-89 SMT Package
· Low Noise Figure
Pin No.
1
2, 4
3
Technical Note
SUMITOMO ELECTRIC
♦Functional
Diagram
Function
Input/Gate
Ground
Output/Drain
4
1
Number
of devices
2
3
Container
7” Reel
Anti-static
Bag
♦Ordering
Information
Part No
P0120007P
KP027J
Description
GaAs Power FET
2.11-2.17GHz
Application Circuit
1000
1
♦Applications
· Wireless communication system
· Cellular, PCS, PHS, W-CDMA, WLAN
♦Description
P0120007P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance.
The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI’s long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150°C. You can see the details in
Reliability and Quality Assurance.
♦Absolute
Maximum Ratings (@Tc=25°C)
Parameter
Symbol
Value
Units
Drain-Source Voltage
Vds
10
V
Gate-Source Voltage
Vgs
-4
V
Drain Current
Ids
Idss
---
RF Input Power
Pin
13
(*)
dBm
(continuous)
Power Dissipation
Pt
2.1
W
(**)
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
- 40 to +150
°C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to IP3.
(**) Recommended Tj under operation is below 125°C.
Values
Typ.
---
---
---
---
---
24
Vds=8V
Ids=80mA
f=2.1GHz
15
---
---
41
38
♦Electrical
Specifications (@Tc=25°C)
Parameter
DC
Saturated Drain Current
Transconductance
Pinchoff Voltage
Gate-Source Breakdown Voltage
RF
Thermal Resistance
Frequency
Output Power
@ 1dB Gain Compression
Small Signal Gain
Output IP3
Power Added Efficiency
Symbol
Idss
gm
Vp
|Vgs0|
Rth
f
P1dB
G
IP3
η
add
Test Conditions
Vds=3V, Vg=0V
Vds=8V, Ids=100mA
Vds=8V, Ids=10mA
Igso= - 10µA
Channel-Case
Min.
---
90
- 3.0
3.0
---
Max.
300
---
- 1.7
---
60
2.7
---
---
---
---
Units
mA
mS
V
V
°C/W
GHz
dBm
dB
dBm
%
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-1-
P0120007P
250mW GaAs Power FET (Pb-Free Type)
♦Typical
Characteristics
Technical Note
SUMITOMO ELECTRIC
Total Power Dissipation(W)
4
3
2
Power Derating Curve
Drain Current(mA)
400
300
200
100
00
Transfer Curve
Vgs=0V
-0.5V
-1.0V
-1.5V
-2.0V
1
0
0
50
100
Tc (°C)
150
200
2
4
Vds (V)
6
8
♦Load-pull
Characteristics (Typical Data)
Tc=25°C, Vds=8V,
Ids=100mA,
Common Source, Zo=50
Ω
(Calibrated to device leads)
1.0
0.6
0 .8
2 .0
6.0
3.0
4.0
5.0
90
1.2GHz
S21
4.0
2.0
2.4GHz
1.2GHz S12
0
0.02
2.4GHz
0
0.04 0.06
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
2.4GHz
-4.
40
- .
-5.0
-0.2
-180
Scale for |S12|
0
0
2.4GHz 1.2GHz
S11
.4
-0
.0
-2
-0.8
1.2GHz
-1.0
- 0.
6
-1
35
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-2-
- 3.
30
0
S22
Scale for |S21|
45
5
-
-4
-10.0
10
0
0..
4
5
35
13
0.2
.
-90
P0120007P
250mW GaAs Power FET (Pb-Free Type)
Tc=25°C, Vds=8V,
Ids=80mA,
Common Source, Zo=50
Ω
(Calibrated to device leads)
Technical Note
SUMITOMO ELECTRIC
1.0
0 .8
2 .0
1.2GHz
5
1
13
3 .0
4 .0
5 .0
6.0
S21
4.0
2.4GHz
1.2GHz
S12
45
0 .6
1 0.0
2.0
Scale for |S12|
-180
0
0.2
0.8
1.0
0
10.0
0.4
0.6
2.0
3.0
4.0
5.0
90
S11
4
- 0.
2.4GHz S22
0
-2.
0
Scale for |S21|
- 0.
1.2GHz
- 0.8
6
-1
35
Ids=100mA Freq(GHz) S11 M ag
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Ids=80mA
0.847
0.823
0.800
0.787
0.776
0.769
0.761
-1.0
S11Ang
-97.5
-112.3
-126.2
-139.5
-151.5
-162.7
-173.4
S11Ang
-97.3
-112.1
-126.1
-139.3
-151.4
-162.5
-173.3
S21 M ag
6.148
5.764
5.392
5.038
4.702
4.407
4.133
S21 M ag
6.188
5.802
5.428
5.071
4.734
4.437
4.159
Freq(GHz) S11 M ag
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.846
0.821
0.798
0.785
0.774
0.766
0.759
[Note]
You can download the S-parameter list from our web site:
www.sei.co.jp/GaAsIC
/
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-3-
-4.
.0
- 5.0
.
-0.2
1.2GHz
- .0
- 10 .0
- .
- 3.
0
0 ..4
0
0 .2
2.4GHz
0.02
0.04
0.06
2.4GHz
5
45
-4
-90
S21 Ang
107.5
97.0
87.0
77.6
68.6
60.2
52.3
S21 Ang
107.5
97.0
87.1
77.6
68.7
60.3
52.3
S12 M ag
0.038
0.041
0.043
0.045
0.046
0.046
0.047
S12 M ag
0.040
0.043
0.045
0.047
0.048
0.049
0.050
S12 Ang
36.0
28.8
21.9
15.6
9.7
4.1
-1.6
S12 Ang
35.7
28.5
21.4
15.1
9.1
3.5
-2.3
S22 M ag
0.555
0.534
0.513
0.495
0.474
0.458
0.433
S22 M ag
0.547
0.525
0.503
0.484
0.463
0.446
0.421
S22 Ang
-41.6
-47.6
-53.8
-59.4
-65.1
-70.5
-76.0
S22 Ang
-42.5
-48.6
-54.9
-60.6
-66.4
-71.8
-77.3
P0120007P
250mW GaAs Power FET (Pb-Free Type)
Ids=100mA
80
60
40
20
Pout
(dBm)
Gain (dB)
IM3 (dBm)
IP3 (dBm)
IM3/Pout
(dBc)
ηadd
(%)
0
-20
-40
-60
-80
-100
-20
-15
-10
-5
0
5
10
15
IM3
IM3/Pout
Pout
ηadd
Gain
Pout (dBm)
Gain (dB)
IM3 (dBm)
IP3 (dBm)
IM3/Pout (dBc)
ηadd
(%)
Technical Note
SUMITOMO ELECTRIC
Ids=80mA
80
60
IP3
40
20
0
-20
-40
-60
-80
-100
-20
-15
-10
Pout
Gain
IP3
ηadd
IM3
IM3/Pout
-5
0
5
10
15
Pin (dBm)
Pin (dBm)
Device: P0120007P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=100mA
Source Matching: Mag 0.68 Ang 133.9°
Load Matching: Mag 0.37 Ang 91.1°
Device : P0120007P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=80mA
Source Matching: Mag 0.68 Ang 133.9°
Load Matching: Mag 0.54 Ang 77.8°
[Note]
P
out
and
η
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=100mA
Pin
(dBm)
-15.0
-10.0
-5.0
0.0
5.0
10.0
Pin
(dBm)
-15.0
-10.0
-5.0
0.0
5.0
10.0
Pout
(dBm)
1.2
6.3
11.4
16.4
21.4
25.1
Pout
(dBm)
0.7
5.9
11.0
16.1
21.0
24.4
Gain
(dB)
16.2
16.3
16.4
16.4
16.4
15.1
Gain
(dB)
15.7
15.9
16.0
16.1
16.0
14.4
IM3
(dBm)
-68.1
-59.2
-47.5
-32.8
0.1
13.8
IM3
(dBm)
-67.8
-60.3
-48.9
-27.3
1.5
12.4
IM3/Pout
(dBc)
-69.3
-65.5
-58.8
-49.2
-21.3
-11.3
IM3/Pout
(dBc)
-68.5
-66.2
-59.8
-43.3
-19.5
-12.0
IP3
(dBm)
35.9
39.0
40.8
41.0
30.7
27.1
IP3
(dBm)
34.9
39.0
40.9
37.7
29.1
27.2
Id
(mA)
97.8
95.3
91.7
88.2
85.1
93.3
Id
(mA)
78.9
76.1
72.6
69.9
65.0
69.6
ηadd
(%)
0.2
0.5
1.8
6.0
19.8
41.9
ηadd
(%)
0.2
0.6
2.1
7.0
23.6
47.8
Id=80mA
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-4-
P0120007P
250mW GaAs Power FET (Pb-Free Type)
Tc= 25°C, Vds=8V, Ids=100mA, Pin=-5dBm
[Pout-Lstate]
f = 2.1GHz
Γ
pout
: 0.61∠ 92.7
Source : 0.65∠ 154.2
Pout max : 13.7d Bm
+j50
+j25
13.7
+j100
+j25
Technical Note
SUMITOMO ELECTRIC
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
Γ
IP 3
: 0.37∠ 91.1
Source : 0.68∠ 133.9
IP3 max : 40.4d Bm
+j50
39.15
+j100
12.45
40.4
25Ω
50Ω
100Ω
25Ω
50Ω
100Ω
-j25
-j50
-j100
-j25
-j50
-j100
Tc=25°C, Vds=8V, Ids=80mA, Pin=-5dBm
[Pout-Lstate]
f = 2.1GHz
Γ
pout
: 0.63∠ 94.2
Source : 0.65∠ 154.2
Pout max : 13.7d Bm
+j50
+j25
13.7
+j100
+j25
40.55
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
Γ
IP 3
: 0.54∠ 77.8
Source : 0.68∠ 133.9
IP3 max : 40.55d Bm
+j50
+j100
12.45
38.05
25Ω
50Ω
100Ω
25Ω
50Ω
100Ω
-j25
-j50
-j100
-j25
-j50
-j100
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-5-
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