T-1 PACKAGE
PIN PHOTODIODE
Description
The MID-30A12 is a PIN photodiode mou-
nted in a lensed , special dark plastic package.The lens-
ing effect of the package allows an acceptance half view
angle of 10° that is measured from the optical axis to the
half power point .
1.00
(.040)
5.25
(.207)
3.00
(.118)
MID-30A12
Package Dimensions
Unit : mm (inches )
4.00
(.157)
SEE NOTE 2
0.80±0.50
(.031)
FLAT DENOTES CATHODE
23.40MIN.
(.920)
Features
l
l
l
l
l
0.50 TYP.
(.020)
1.00MIN.
(.040)
2.54 NOM.
(.100)
SEE NOTE 3
High photo sensitivity
Low junction capacitance
Hight cut-off frequency
Fast switching time
Good spectral matching IRED (λp=940nm) type.
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.8 mm (.031") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Reverse Break Down Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
100
30
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
V
Unity Opto Technology Co., Ltd.
02/04/2002
MID-30A12
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Reverse Break Down Voltage
Reverse Dark Current
Open Circuit Voltage
Rise Time
Fall Time
Light Current
Total Capacitance
Half Acceptance Angle
Test Conditions
I
R
=100µA
Ee=0
V
R
=10V
Ee=0
λ=940nm
Ee=0.1mW/cm
R
L
=1KΩ
V
R
=5V,
λ=940nm
Ee=0.1mW/cm
Ee=0
V
R
=5V
Ee=0.1mW/cm
2
2
2
Symbol
V
(BR)R
I
D
V
OC
Tr
Tf
I
L
C
T
2θ
1/2
Min.
30
Typ.
Max.
Unit
V
30
350
40
30
1
4
15
25
nA
mV
V
R
=10V
λ=940nm
nsec
µA
pF
deg.
V
R
=3V, f=1MH
Z
Typical Optical-Electrical Characteristic Curves
4000
100
Dark Current I
R
- pA
Capacitance C - pF
3000
2000
1000
0
0
5
10
15
o
80
60
40
20
0
0.01
20
0.1
1
10
100
Reverse Voltage - C
FIG.1 DARK CURRENT VS REVERSE VOLTAGE
TAMB=25
o
C, Ee=0 mW/cm
2
200
Reverse Voltage- V
R
FIG.2 CAPACITANCE VS. REVERSE
VOLTAGE
F=1MHZ ; Ee=0mW/cm
2
1000
Total Power Dissipation
mW
150
100
50
0
0
20
40
60
80
100
o
Dark Current I
R
- nA
100
10
1
0.1
0
20
40
60
80 100
Ambient Temperature - C
FIG.3 TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
Ambient Temperature -
o
C
FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE
V
R
=10, Ee=0 mw/cm
2
Unity Opto Technology Co., Ltd.
02/04/2002
MID-30A12
Typical Optical-Electrical Characteristic Curves
100
1000
Relative Response
80
60
40
20
0
Ip -
µ
A
Photocurrnet
100
10
1
0.1
700
800
900 1000 1100 1200
0.01
0. 1
1
10
λ
Wavelength (nm)
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
0° 10° 20°
30°
40°
1.0
0.9
0.8
50°
60°
70°
80°
90°
0.5 0.3 0.1
0.2 0.4 0.6
Irradiance Ee (mW/cm
2
)
FIG.6 PHOTOCURRENT VS.
IRRADIANCE = 950 nm
FIG.7 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
PCB设计
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