e
PTB 20017
150 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20017 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz cellular
radio frequency band. Rated at 150 watts minimum output power, it
may be used for both CW and PEP applications. Ion implantation,
nitride surface passivation and gold metallization are used to ensure
excellent device reliability. 100% lot traceability is standard.
150 Watts, 860–900 MHz
Class AB Characteristics
50% Collector Efficiency at 150 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
240
Output Power (Watts)
200
160
120
80
40
0
0
7
14
21
28
35
200
17
LOT
COD
E
V
CC
= 25 V
I
CQ
= 200 mA (per side)
f = 900 MHz
Input Power (Watts)
Package 20224
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
60
4.0
25
330
1.89
–40 to +150
0.53
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20017
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 100 mA
V
BE
= 0 V, I
C
= 100 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 1 A
Symbol
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
h
FE
Min
25
55
3.5
20
Typ
30
70
5
50
Max
—
—
—
100
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 25 Vdc, Pout = 150 W, I
CQ
= 200 mA per side,
f = 900 MHz)
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 150 W, I
CQ
= 200 mA per side,
f = 900 MHz)
Intermodulation Distortion
(V
CC
= 25 Vdc, Pout = 150 W(PEP), I
CQ
= 200 mA per side,
f
1
= 899 MHz, f
2
= 900 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 150 W(PEP), I
CQ
= 200 mA per side
f = 900 MHz—all phase angles at frequency of test)
Symbol
G
pe
Min
8.0
Typ
9.0
Max
—
Units
dB
η
C
50
—
—
%
IMD
—
-28
—
dBc
Ψ
—
—
5:1
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 150 W, I
CQ
= 200 mA per side)
Z Source
Z Load
Frequency
MHz
860
880
900
R
3.4
3.1
2.9
Z Source
jX
-6.7
-6.1
-5.6
R
3.5
3.4
3.2
Z Load
jX
-3.1
-2.6
-2.1
2
e
Typical Performance
Gain & Efficiency vs. Frequency
11
10
PTB 20017
(as measured in a broadband circuit)
Gain (dB)
80
70
60
Gain (dB)
9
8
7
6
5
840
Efficiency (%)
50
V
CC
= 25 V
I
CQ
= 200 mA (per side)
Pout = 150 Watts CW
855
870
885
900
40
30
20
915
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20017 Uen Rev. D 09-28-98
3
Efficiency (%)
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
