Pb Free Plating Product
ISSUED DATE :2004/10/13
REVISED DATE :2005/08/10B
GTS9928E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
22m
5A
The GTS9928E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
*Low on-resistance
*Capable of 2.5V gate drive
*Optimal DC/DC battery application
Description
Features
Package Dimensions
REF.
A
A1
b
c
D
Millimeter
Min.
-
0.05
0.19
0.09
2.90
Max.
1.20
0.15
0.30
0.20
3.10
REF.
E
E1
e
L
S
Millimeter
Min.
6.20
4.30
0.45
0°
Max.
6.60
4.50
0.75
8°
0.65 BSC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
3
, VGS@4.5V
Drain Current
3
, VGS@4.5V
Pulsed Drain Current
1
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@Ta=25 :
I
D
@Ta=70 :
I
DM
P
D
@Ta=25 :
Tj, Tstg
Ratings
20
f 12
5.0
3.5
25
1
0.008
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rthj-a
Ratings
125
Unit
/W
1/6
ISSUED DATE :2004/10/13
REVISED DATE :2005/08/10B
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min.
20
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
21
-
-
-
-
-
15.9
1.5
7.4
6.2
9
30
11
530
245
125
Max.
-
-
-
-
D
10
1
25
22
28
-
-
-
-
-
-
-
-
-
-
pF
ns
nC
Unit
V
V/ :
V
S
uA
uA
uA
mŁ
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
12V
V
GS
= D
V
DS
=20V, V
GS
=0
V
DS
=20V, V
GS
=0
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=2A,
I
D
=5A
V
DS
=10V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
V
GS
=4.5V
R
G
=3.3 Ł
R
D
=10 Ł
V
GS
=0V
V
DS
=20V
f=1.0MHz
Symbol
BV
DSS
BV
DSS
/
Tj
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
I
S
Min.
-
-
Typ.
-
-
Max.
1.2
0.83
Unit
V
A
Test Conditions
I
S
=5A, V
GS
=0, Tj=25 :
V
D
=V
G
=0V, V
S
=1.2V
Continuous Source Current
(
Body Diode
)
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 208 : /W when mounted on Min. copper pad.
2/6
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