e
PTB 20125
100 Watts, 1.8–2.0 GHz
PCN/PCS Power Transistor
Description
The 20125 is an NPN, push-pull RF power transistor intended for 26
Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP
minimum output power, it is specifically intended for operation as a
final stage in CDMA or TDMA systems. Ion implantation, nitride surface
passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
100 Watts, 1.8–2.0 GHz
Class AB Characteristics
40% Collector Efficiency at 100 Watts
Gold Metallization
Silicon Nitride Passivated
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
11
Output Power (W)
140
120
Gain (dB)
10
9
8
7
6
V
CC
= 26 V
I
CQ
= 200 mA
100
80
Output Power & Efficiency
12
2012
5
LOT
COD
E
Gain (dB)
60
40
Efficiency (%)
20
2050
5
1750
1800
1850
1900
1950
2000
Frequency (MHz)
Package 20225 *
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
55
55
4.0
14
400
2.3
–40 to +150
0.44
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
* This product not recommended or specified for CW or class A operation. Recommend two PTB 20175 for these applications.
1
5/1 9/98
PTB 20125
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
V
BE
= 0 V, I
C
= 100 mA
I
C
= 0 A, I
E
= 20 mA
V
CE
= 10 V, I
C
= 1.5 A
Symbol
V
(BR)CES
V
(BR)EBO
h
FE
Min
55
4.0
30
Typ
—
5.0
50
Max
—
—
120
Units
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 26 Vdc, Pout = 40 W(PEP), I
CQ
= 2 x 100 mA, f = 2 GHz)
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 100 W, I
CQ
= 2 x 100 mA, f = 2 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 100 W(PEP), I
CQ
= 2 x 100 mA, f = 2 GHz
—at all phase angles)
Symbol
G
pe
Min
7.0
40
—
Typ
8.0
45
—
Max
—
—
5:1
Units
dB
%
—
η
C
Ψ
Typical Performance
Broadband Test Fixture Performance
10
Gain (dB)
8
60
50
40
- 30
5
20
-15
-25
10
Return Loss (dB)
0
1900
1925
1950
1975
-35
0
2000
Efficiency (%)
Output Power vs. Supply Voltage
140
Output Power (Watts)
130
120
110
100
90
80
70
22
23
24
25
26
27
Gain (dB)
6
4
2
V
CC
= 26 V
I
CQ
= 200 mA
Pout = 50 W
Efficiency (%)
Return Loss (dB)
I
CQ
= 200 mA
f = 2000 MHz
Frequency (MHz)
Supply Voltage (Volts)
2
e
Power Gain vs. Output Power
10
9
160
PTB 20125
Typical Output Power vs. Input Power
140
120
100
80
60
40
20
0
0
5
10
15
20
25
30
Power Gain (dB)
I
CQ
= 200 mA
8
I
CQ
= 100 mA
7
6
5
0.1
1.0
10.0
100.0
I
CQ
= 50 mA
Output Power (Watts)
V
CC
= 26 V
f = 2000 MHz
Vcc = 26 V
I
CQ
= 200 mA
f = 2000 MHz
Output Power (Watts)
Input Power (Watts)
Intermodulation Distortion vs. Power Output
-30
-31
-32
-33
-34
-35
-36
-37
-38
-39
-40
10
20
30
40
50
60
70
80
90
100
IMD (dBc)
V
CC
= 26 V
I
CQ
= 2 x 50 mA
f
1
= 1.999 GHz
f
2
= 1.998 GHz
Output Power (Watts-PEP)
Impedance Data
(V
CC
= 26 Vdc, Pout = 100 W, I
CQ
= 2 x 100 mA)
Z Source
Z Load
Z
0
= 50
Ω
Frequency
GHz
1.75
1.80
1.85
1.90
1.95
2.00
2.05
R
5.4
5.8
6.0
7.2
8.8
10.4
11.8
Z Source
jX
-6.2
-7.6
-8.6
-9.2
-9.0
-7.2
-2.4
R
5.1
5.2
5.4
5.6
5.8
6.0
6.2
Z Load
jX
-6.2
-5.8
-5.0
-4.0
-2.8
-2.4
-1.8
3
PTB 20125
Test Circuit
e
Q1
Block Diagram for f = 2 GHz
Q1
l
1,
l
2,
l
21,
l
22
l
3,
l
4
l
5,
l
6
l
7,
l
8,
l
11,
l
12
l
9,
l
10
l
13,
l
14
l
15,
l
16
l
17,
l
18
l
19,
l
20
PTB 20125 NPN RF Transistor
.25λ 2GHz Microstrip 50
Ω
.085λ 2GHz Microstrip 80
Ω
.067λ 2GHz Microstrip 20
Ω
.0217λ 2GHz Microstrip 11.7
Ω
.053λ 2GHz Microstrip 8.15
Ω
.055λ 2GHz Microstrip 6.7
Ω
.052λ 2GHz Microstrip 11.45
Ω
.060λ 2GHz Microstrip 16.9
Ω
.252λ 2GHz Microstrip 75
Ω
L1, L2
L3, L4
L5, L6
C1, C2
C3-8, C17, C18
C9, C11, C13, C15
C10, C12, C14, C16
R1, R2
T1, T2
Board
6.8 nh SMT Inductor
56 nh SMT Inductor
4 mm. SMT Ferrite
0–4 pF Johanson Piston Trimmer
33 pF (B ATC 100)
.1
µF
1206
10
µF
SMT Tantalum
22
Ω
SMT
UT 70-50
0.031: G200, Solid Copper
Bottom, AlliedSignal
Placement Diagram (not to scale)
4
e
PTB 20125
Artwork (1 inch
)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
L3
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20125 Uen Rev. C 09-28-98
5
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