The documentation and process conversion measures
necessary to comply with this document shall be
completed by 12 June 2013.
INCH-POUND
MIL-PRF-19500/355R
12 March 2013
SUPERSEDING
MIL-PRF-19500/355P
9 December 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,
TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U,
JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR,
JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH,
JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN
silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified
in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators “M”, “D”, “P“, “L”,
“R”, “F”, “G” and “H” are appended to the device prefix to identify devices, which have passed RHA requirements.
1.2 Physical dimensions. See figure 1 (similar to TO-78), figure 2 (surface mount), figure 3 (JANHCA and
JANKCA die), and figure 4 (JANHCB and JANKCB die).
1.3 Maximum ratings. Unless otherwise specified, T
C
=+25°C.
Type
I
C
mA dc
All types
30
V
CBO
V dc
70
V
CEO
V dc
60
V
EBO
V dc
6
P
T
(1)
T
A
= +25°C
One
section
mW
200
Both
sections
mW
350
P
T
(2)
T
C
= +25°C
One
section
mW
300
Both
sections
mW
450
One
section
°C/W
875
R
θJA
Both
sections
°C/W
500
One
section
°C/W
583
R
θJC
Both
sections
°C/W
388
T
J
and T
STG
°C
-65 to +200
(1) For T
A
> +25°C, derate linearly 1.143 mW/°C, one section; 2.000 mW/°C, both sections.
(2) For T
C
> +25°C, derate linearly 1.714 mW/°C, one section; 2.571 mW/°C, both sections.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at
https://assist.dla.mil
.
AMSC N/A
FSC 5961
MIL-PRF-19500/355R
1.4 Primary electrical characteristics of each individual section. Unless otherwise specified, T
C
=+25°C.
h
FE1
V
CE
= 5 V dc
I
C
= 10
µA
dc
2N2919 2N2919L
2N2920 2N2920L
2N2919U
2N2920U
Min
Max
*
60
240
175
600
|h
fe
|
V
CE
= 5 V dc
I
C
= 0.5 mA dc
f = 20 MHz
V
CE(SAT)
I
C
= 1 mA dc
I
B
= 100
µA
dc
V dc
3.0
20
0.3
1.5 Primary electrical matching characteristics of each individual section. Unless otherwise specified, T
C
=+25°C.
h
FE
2
−
1
h
FE
2
−
2
V
CE
= 5 V dc
I
C
= 100
µA
dc
(1)
|V
BE1
- V
BE2
|
1
|∆(V
BE1
- V
BE2
)
∆TA
|
1
|∆(V
BE1
- V
BE2
)
∆TA
|
2
V
CE
= 5 V dc
I
C
= 10
µA
dc
V
CE
= 5 V dc
I
C
= 100
µA
dc
T
A
= +25°C and -55°C
mV dc
0.8
V
CE
= 5 V dc
I
C
= 100
µA
dc
T
A
= +125°C and +25°C
mV dc
1.0
mV dc
*
Min
Max
0.9
1.1
5
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
https://assist.dla.mil/quicksearch
or
https://assist.dla.mil
or
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/355R
Dimensions
Inches
Symbol
CD
CD
1
CH
HT
LC
LC
1
LD
LL
LU
L
1
L
2
P
Q
TL
TW
r
α
Min
Max
Min
Max
.335
.370
8.51
9.40
.305
.335
7.75
8.51
.140
.260
3.56
6.60
.009
.041
0.23
1.04
.140
.160
3.56
4.06
.200 TP
5.08 TP
9
.016
.021
.041
0.53
10
See notes 10, 11, and 12
.016
.019
0.41
0.48
10
.050
1.27
10
.250
6.35
10
.100
2.54
8
.050
1.27
7
.029
.045
0.74
1.14
5, 6
.028
.034
0.71
0.86
4, 5
.010
0.25
9
45°TP
45°TP
Millimeters
Notes
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
Dimensions are in inches.
Millimeters are given for general information only.
Tab shown omitted.
Lead numbers 4 and 8 are omitted on this variation.
Beyond r maximum, TW shall be held to a minimum length of .21 inch (5.33 mm).
TL shall be measured from maximum CD.
Details of outline in this zone are optional.
CD
1
shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic
handling.
Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch
(0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at
MMC. The device may be measured by direct methods or by the gauge and gauging procedures
described on gauge drawing GS-1.
LU applies between L
1
and L
2
. LD applies between L
2
and LL minimum. Diameter is uncontrolled in
L
1
and beyond LL minimum.
For transistor types 2N2919 and 2N2920, LL is .500 inch (12.70 mm) minimum and .750 inch (19.05
mm) maximum.
For transistor type 2N2919L and 2N2920L, LL is 1.500 inches (38.10 mm) minimum and 1.750 inches (44.45
mm) maximum.
In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 1. Physical dimensions 2N2919, 2N2919L, 2N2920, and 2N2920L (TO-78).
3
MIL-PRF-19500/355R
Symbol
BL
BL
2
BW
BW
2
CH
LH
LL
1
LL
2
LS
1
LS
2
LW
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.240
.250
6.10
6.35
.250
6.35
.165
.175
4.19
4.44
.175
4.44
.044
.080
1.12
2.03
.026
.039
0.66
0.99
.060
.070
1.52
1.78
.082
.098
2.08
2.49
.095
.105
2.41
2.67
.045
.055
1.14
1.39
.022
.028
0.56
0.71
Pin no.
1
2
3
4
5
6
Transistor
Collector no. 1
Base no. 1
Base no. 2
Collector no. 2
Emitter no. 2
Emitter no. 1
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 2. Physical dimensions (2N2919U and 2N2920U) surface mount.
4
MIL-PRF-19500/355R
NOTES:
1. Chip size.................................................
2. Chip thickness ........................................
3. Top metal ...............................................
4. Back metal..............................................
.015 x .019 inch
±.001
inch (0.381 x 0.4826 mm ±0.0254 mm).
.010
±.0015
inch (0.254 ±0.0381 mm).
Aluminum 15,000Å minimum, 18,000Å nominal.
A. Gold 2,500Å minimum, 3,000Å nominal.
B. Eutectic Mount - No Gold.
5. Backside ................................................. Collector.
6. Bonding pad ........................................... B = .003 inch (0.0762 mm), E = .004 inch (0.1016 mm) diameter.
7. Passivation ............................................. Si
3
N
4
(Silicon Nitride) 2 kÅ min, 2.2 kÅ nom.
FIGURE 3. Physical dimensions (JANHCA and JANKCA die).
5
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