28C011T
1 Megabit (128K x 8-Bit) EEPROM
V
CC
V
SS
RES
OE
CE
WE
RES
A0
Y Decoder
Address
Buffer and
Latch
A7
A16
Data Latch
Y Gating
I/O Buffer and
Input Latch
Control Logic Timing
High Voltage
Generator
I/O0
I/O7
RDY/Busy
28C011T
A6
X Decoder
Memory Array
Memory
Logic Diagram
F
EATURES
:
• 128k x 8-bit EEPROM
• R
AD
-P
AK
® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
- No Latchup > 120 MeV/mg/cm
2
- SEU > 90 MeV/mg/cm
2
read mode
• Package:
- 32-pin R
AD
-P
AK
® flat package
- 32-pin Rad-Tolerant flat package
- JEDEC-approved byte-wide pinout
• High speed:
- 120, 150, and 200 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode),
- 10 year data retention
• Page write mode:
- 1 to 128 bytes
• Low power dissipation
- 20 mW/MHz active (typical)
- 110 µ W standby (maximum)
D
ESCRIPTION
:
Maxwell Technologies’ 28C011T high-density 1 Megabit (128K
x 8-Bit) EEPROM microcircuit features a greater than 100
krad (Si) total dose tolerance, depending upon space mission.
The 28C011T is capable of in-system electrical byte and page
programmability. It has a 128-byte page programming function
to make its erase and write operations faster. It also features
data polling and a Ready/Busy signal to indicate the comple-
tion of erase and programming operations. In the 28C010T,
hardware data protection is provided with the RES pin, in addi-
tion to noise protection on the WE signal and write inhibit on
power on and off. Software data protection is implemented
using the JEDEC optional standard algorithm.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
® provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
11.10.03 REV 10
All data sheets are subject to change without notice
1
(858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com
©2003 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
T
ABLE
1. 28C011T P
INOUT
D
ESCRIPTION
P
IN
12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2
24
22
29
32
16
1
30
S
YMBOL
A0-A16
OE
CE
WE
V
CC
V
SS
RDY/BUSY
RES
D
ESCRIPTION
Address
Output Enable
Chip Enable
Write Enable
Power Supply
Ground
Ready/Busy
Reset
28C011T
T
ABLE
2. 28C011T A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
Supply Voltage (Relative to V
SS
)
Input Voltage (Relative to V
SS
)
Operating Temperature Range
Storage Temperature Range
1. V
IN
min = -3.0V for pulse width < 50ns.
Memory
SYMBOL
MIN
MAX
UNITS
V
CC
V
IN
T
OPR
T
STG
-0.6
-0.5
1
-55
-65
+7.0
+7.0
+125
+150
V
V
°
C
°
C
T
ABLE
3. D
ELTA
L
IMITS
P
ARAMETER
I
CC
1
I
CC
2
I
CC
3A
I
CC
3B
V
ARIATION
±10%
±10%
±10%
±10%
T
ABLE
4. 28C011T R
ECOMMENDED
O
PERATING
C
ONDITIONS
P
ARAMETER
Supply Voltage
Input Voltage
S
YMBOL
V
CC
V
IL
V
IH
RES_PIN
Operating Temperature Range
1. V
IL
min = -1.0V for pulse width < 50 ns
11.10.03 REV 10
M
IN
4.5
-0.3
1
2.2
V
CC
-0.5
-55
M
AX
5.5
0.8
V
CC
+0.3
V
CC
+1
+125
U
NITS
V
V
V
H
T
OPR
°
C
All data sheets are subject to change without notice
2
©2003 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
T
ABLE
5. 28C011T C
APACITANCE
(T
A
= 25
°
C, f = 1 MHZ)
P
ARAMETER
Input Capacitance: V
IN
= 0V
1
Output Capacitance: V
OUT
= 0V
1
1. Guaranteed by design.
S
YMBOL
C
IN
C
OUT
M
IN
--
--
28C011T
M
AX
6
12
U
NITS
pF
pF
T
ABLE
6. 28C011T DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 5V ± 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Input Leakage Current
Output Leakage Current
Standby V
CC
Current
Operating V
CC
Current
T
EST
C
ONDITION
V
CC
= 5.5V, V
IN
= 5.5V
V
CC
= 5.5V, V
OUT
= 5.5V/0.4V
CE = V
CC
CE = V
IH
I
OUT
= 0mA, Duty = 100%, Cycle =
1µ s at V
CC
= 5.5V
I
OUT
= 0mA, Duty = 100%, Cycle =
150ns at V
CC
= 5.5V
Input Voltage
RES_PIN
Output Voltage
I
OL
= 2.1 mA
I
OH
= -0.4 mA
1. I
LI
on RES = 100 uA max.
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
S
UBGROUPS
1, 2, 3
1, 2, 3
1, 2, 3
S
YMBOL
I
IL
I
LO
I
CC1
I
CC2
I
CC3A
I
CC3B
V
IL
V
IH
V
H
V
OL
V
OH
M
IN
--
--
--
--
--
--
--
2.2
V
CC
-0.5
--
2.4
M
AX
2
1
2
20
1
15
50
0.8
--
--
0.4
--
V
V
U
NITS
µA
µA
µA
mA
mA
Memory
T
ABLE
7. 28C011T AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Address Access Time
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
Chip Enable Access Time
OE = V
IL
, WE = V
IH
-120
-150
-200
S
YMBOL
t
ACC
S
UBGROUPS
9, 10, 11
--
--
--
t
CE
9, 10, 11
--
--
--
120
150
200
120
150
200
ns
M
IN
M
AX
U
NITS
ns
11.10.03 REV 10
All data sheets are subject to change without notice
3
©2003 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Output Enable Access Time
CE = V
IL
, WE = V
IH
-120
-150
-200
Output Hold to Address Change
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-120
-150
-200
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
RES to Output Delay
3
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
S
YMBOL
t
OE
S
UBGROUPS
9, 10, 11
0
0
0
t
OH
9, 10, 11
0
0
0
9, 10, 11
t
DF
0
0
0
t
DFR
0
0
0
9, 10, 11
--
--
--
M
IN
28C011T
M
AX
U
NITS
ns
75
75
100
ns
--
--
--
ns
50
50
60
T
ABLE
7. 28C011T AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
Memory
300
350
450
ns
400
450
650
t
RR
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
T
ABLE
8. 28C011T AC E
LECTRICAL
C
HARACTERISTICS FOR
P
AGE
/B
YTE
E
RASE AND
B
YTE
W
RITE
O
PERATIONS
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Address Setup Time
-120
-150
-200
Chip Enable to Write Setup Time (WE controlled)
-120
-150
-200
S
YMBOL
t
AS
S
UBGROUPS
9, 10, 11
0
0
0
t
CS
9, 10, 11
0
0
0
--
--
--
ns
--
--
--
M
IN 1
M
AX
U
NITS
ns
11.10.03 REV 10
All data sheets are subject to change without notice
4
©2003 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C011T
T
ABLE
8. 28C011T AC E
LECTRICAL
C
HARACTERISTICS FOR
P
AGE
/B
YTE
E
RASE AND
B
YTE
W
RITE
O
PERATIONS
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Write Pulse Width
CE controlled
-120
-150
-200
WE controlled
-120
-150
-200
Address Hold Time
-120
-150
-200
Data Setup Time
-120
-150
-200
Data Hold Time
-120
-150
-200
Chip Enable Hold Time (WE controlled)
-120
-150
-2000
Write Enable to Write Setup Time (CE controlled)
-120
-150
-200
Write Enable Hold Time (CE controlled)
-120
-150
-200
Output Enable to Write Setup Time
-120
-150
-200
Output Enable Hold Time
-120
-150
-200
S
YMBOL
t
CW
200
250
350
t
WP
200
250
350
t
AH
9, 10, 11
150
150
200
t
DS
9, 10, 11
75
100
150
t
DH
9, 10, 11
10
10
10
t
CH
9, 10, 11
0
0
0
t
WS
9, 10, 11
0
0
0
t
WH
9, 10, 11
0
0
0
t
OES
9, 10, 11
0
0
0
t
OEH
9, 10, 11
0
0
0
11.10.03 REV 10
S
UBGROUPS
9, 10, 11
M
IN 1
M
AX
U
NITS
ns
--
--
--
--
--
--
ns
--
--
--
Memory
ns
--
--
--
ns
--
--
--
--
--
--
--
--
--
ns
--
--
--
ns
--
--
--
ns
--
--
--
ns
ns
All data sheets are subject to change without notice
5
©2003 Maxwell Technologies
All rights reserved.
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