iW662
AC/DC Secondary-Side Synchronous Rectification and Rapid Charge
TM
Interface Controller for Qualcomm
®
Quick Charge™ 3.0
1 Description
The iW662 is an AC/DC secondary-side combo controller for Qualcomm
®
Quick Charge
TM
3.0 (QC3.0) which includes
USB interface, secondary-to-primary communication and synchronous rectification functions in a single IC.
The iW662 resides on the secondary side of an AC/DC power supply and allows the adapter to be configured for
multi-level output voltages from 3.6V to 12V in 200mV increments, depending on the voltage requested by the mobile
device (MD). It can be used in Dialog’s primary-side controlled AC/ DC systems to achieve fast voltage transition, low no-
load power consumption, and fast dynamic load response.
The iW662 uses Dialog’s proprietary XM-Comm secondary-to-primary digital communication technology. When paired
with one of Dialog’s primary-side controllers, the iW1790 or iW1796, the optocoupler can be completely eliminated in the
system. The iW662 transmits all necessary information for rapid charge through the power transformer, including output
voltage requests, output current limits, output voltage undershoot, output over-voltage, and fault and reset signals.
The iW662 is also an advanced synchronous rectifier (SR) controller with an integrated MOSFET driver, enabling
discontinuous mode flyback converters with high efficiency operation. The device works with an external power
MOSFET to replace the main rectifying diode on the secondary of a flyback converter, improving efficiency by reducing
secondaryside conduction losses. Dialog’s digital adaptive turn-off control technology minimizes turn-off deadtime,
eliminating the need for an additional Schottky diode that is typically needed in parallel with the synchronous MOSFET
in conventional synchronous rectifiers.
The iW662 and iW1790/iW1796 provide double-layer cable protection. On the secondary side, the iW662 incorporates
Dialog’s proprietary D+/D- over-voltage protection to address V
BUS
D+/D- soft shorts. On the primary side, the iW1790/
iW1796 uses Dialog’s advanced fault control technology to reduce the average output power during soft shorts without
latch.
Qualcomm
®
Quick Charge
TM
3.0 is a product of Qualcomm Technologies, Inc.
2 Features
●
XM-Comm proprietary secondary-to-primary digital
communication transmits all information for rapid
charge without an optocoupler: output voltage
requests, output current limits, output voltage
undershoot, over-voltage protection, and other fault
and reset signals
●
Lossless MOSFET V
DS
sensing for SR timing control
with digital adaptive turn-off control
●
Optimized 5V MOSFET gate driver
●
High-voltage drain sensing up to 100V with no
additional external clamping circuits required
●
Supports Qualcomm
®
Quick Charge
TM
3.0 technology
High Voltage Dedicated Charging Port (HVDCP) to
provide V
BUS
from 3.6V to 12V in 200mV increments
●
Double-layer cable protection:
x
Secondary side (iW662): Proprietary D+/D- over-
voltage protection (OVP) addresses V
BUS
D+/D-soft
shorts
x
Primary side (iW1790/iW1796): advanced fault
control technology reduces average output power
at fault conditions without latch
●
Adaptive OVP/UV detection for most V
BUS
levels
●
Backward compatible with QC2.0 and USB Battery
Charging Specification Revision 1.2 (USB BC1.2)
●
Wide operating voltage range from 3V to 16V
●
Programmable active fast discharge from a high
voltage to 5V at MD unplug or from a high voltage
level to a lower level upon request with built-in switch
or external switch
●
Intelligent low power mode enables < 20mW no-load
power consumption
●
8-Lead SOIC package
Product Summary
www.dialog-semiconductor.com
Rev. 1.2
1 of 7
04-Nov-2019
© 2019 Dialog Semiconductor
iW662
AC/DC Secondary-Side Synchronous Rectification and Rapid Charge
TM
Interface Controller for Qualcomm
®
Quick Charge™ 3.0
3 Applications
●
18W/24W QC AC/DC adapters for smart phones,
tablets, and other portable devices
L
+
N
+
C
OUT
V
OUT
+
V
BUS
-
GND
R1
NTC
U1
iW1790
1
2
3
4
U1
iW662
V
CC
8
GATE
7
1
2
3
GND
SD
V
SENSE
CFG
DRAIN
DIS
D-
V
IN
8
V
CC
7
GND
6
OUT
5
D-
SOURCE
6
I
SENSE
5
4
D+
R2
D+
Figure 3.1 : iW662 18W/24W Typical Application Circuit for Multi-Level Output Voltage and Current (Using iW1790 as
Primary-Side Controller. Achieving < 20mW No-Load Power Consumption.)
L
+
N
+
+
C
OUT
V
OUT
V
BUS
-
GND
U1
iW1796
1
2
3
U2
iW662/3
GATE
6
GND
5
1
2
3
VCC
V
SENSE
MUL
DRAIN
DIS
D-
D+
VIN
VCC
8
7
CS/CDC
4
GND
6
OUT
5
R
CDC
4
D-
D+
Figure 3.2 : iW1796 Typical Application Circuit for Multi-Level Output Voltage and Current
(Using iW662/3 as Secondary-Side Controller for Rapid Charge Protocols. Achieving < 75mW No-Load Power
Consumption (with ample margin) in Typical 15W Design.)
Product Summary
www.dialog-semiconductor.com
Rev. 1.2
2 of 7
04-Nov-2019
© 2019 Dialog Semiconductor
iW662
AC/DC Secondary-Side Synchronous Rectification and Rapid Charge
TM
Interface Controller for Qualcomm
®
Quick Charge™ 3.0
4 Pinout Description
iW662
1
DRAIN
2
DIS
3
D-
4 D+
V
IN
8
V
CC
7
GND
6
OUT
5
Figure 4.1 : 8-Lead SOIC Package
Pin No.
1
Pin Name
Type
Pin Description
DRAIN
DIS
D-
D+
OUT
GND
V
CC
V
IN
Analog Input
Analog Output
Analog Input
Analog Input
Output
Ground
Power Input
Analog Input
Synchronous rectifier MOSFET drain voltage sensing and the
Pulse Linear Regulator (PLR) input.
Discharging circuit. Used for fast discharging of output
capacitor.
USB D- signal.
2
3
4
USB D+ signal.
Synchronous rectifier MOSFET driver.
Ground.
LDO and PLR output. Connect this pin to a capacitor.
Input of the internal LDO and output voltage sensing circuit. Connect
to adapter/charger output for bias voltage. The internal LDO clamps
the V
CC
voltage at 5V when V
IN
> 5V.
5
6
7
8
Product Summary
www.dialog-semiconductor.com
Rev. 1.2
3 of 7
04-Nov-2019
© 2019 Dialog Semiconductor
iW662
AC/DC Secondary-Side Synchronous Rectification and Rapid Charge
TM
Interface Controller for Qualcomm
®
Quick Charge™ 3.0
5 Absolute Maximum Ratings
Absolute maximum ratings are the parameter values or ranges which can cause permanent damage if exceeded. For
maximum safe operating conditions, refer to Electrical Characteristics in Section 6.
Parameter
V
IN
DC supply voltage range (I
CC
= 15mA max)
Continuous DC supply current at V
IN
pin (V
IN
= 25V)
Continuous DC supply current at V
CC
pin (V
CC
= 5.5V)
Gate peak output current
DRAIN pin voltage (Note 1)
DRAIN pin peak current
OUT pin voltage
V
CC
pin voltage
DIS pin voltage
D+ pin voltage
D- pin voltage
Junction temperature
Storage temperature
ESD rating per JEDEC JESD22-A114 (D+ and D- pins)
ESD rating per JEDEC JESD22-A114 (all other pins)
Notes:
Note 1: The DRAIN pin voltage should not be below -0.6V for more than 500ns.
Symbol
V
IN
I
VO
I
VCC
I
G
V
D
I
DRAIN
V
OUT
V
CC
V
DIS
V
D+
V
D-
T
J
Value
-0.3 to 33
15
15
±3
-1.5 to 100
-40 to 350
-0.6 to V
CC
+0.6
-0.6 to 6
30
-0.3 to 7
-0.3 to 7
-40 to 150
-65 to 150
± 6,000
± 2,000
Units
V
mA
mA
A
V
mA
V
V
V
V
V
°C
°C
V
V
Product Summary
www.dialog-semiconductor.com
Rev. 1.2
4 of 7
04-Nov-2019
© 2019 Dialog Semiconductor
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