EEPROM
AS8ER128K32
128K x 32 Radiation Tolerant EEPROM
AVAILABLE AS MILITARY
SPECIFICATIONS
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
PIN ASSIGNMENT
(Top View)
68 Lead CQFP
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
10
60
11
59
12
58
13
57
14
56
15
55
16
54
17
53
18
52
19
51
20
50
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
Vcc
A11
A12
A13
*A15
*A14
A16
CS1\
OE\
CS2\
NC
WE2\
WE3\
WE4\
NC
NC
RDY
RES\
A0
A1
A2
A3
A4
A5
CS3\
GND
CS4\
WE1\
A6
A7
A8
A9
A10
Vcc
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
MIL-PRF-38534
Access time of 150ns, 200ns, 250ns
Operation with single 5V + 10% supply
Power Dissipation:
Active: 1.43 W (MAX), Max Speed Operation
Standby: 7.7 mW (MAX), Battery Back-up Mode
Automatic Byte Write: 10 ms (MAX)
Automatic Page Write (128 bytes): 10 ms (MAX)
Data protection circuit on power on/off
Low power CMOS
10
4
Erase/Write cycles (in Page Mode)
Software data protection
TTL Compatible Inputs and Outputs
Data Retention: 10 years
Ready/Busy\ and Data Polling Signals
Write protection by RES\ pin
Radiation Tolerant: Proven total dose 40K to 100K RADS*
Shielded Package for Best Radiation Immunity
Operating Temperature Ranges:
Military: -55
o
C to +125
o
C
Industrial: -40
o
C to +85
o
C
FEATURES
*Pin #'s 31 and 32, A15 and A14 respectively, are reversed from the AS8E128K32. Correct use
of these address lines is required for operation of the SDP mode to work properly.
PIN NAME
A0 to A16
I/O0 to I/O31
OE\
CE\
WE\
V
CC
OPTIONS
• Timing
150 ns
200 ns
250 ns
• Package
Ceramic Quad Flat pack w/ formed leads
Ceramic Quad Flat pack w/ tie bar
Shielded Ceramic Quad Flat pack
Shielded Ceramic Quad Flat pack
MARKINGS
-150
-200
-250
Q
QB
SQ
SQB
No. 703Q
No. 703QB
No. 703SF
No. 703SQB
FUNCTION
FUNCTION
Address Input
FUNCTION
Data
FUNCTION
Input/Output
Output Enable
FUNCTION
FUNCTION
Chip Enable
Write Enable
FUNCTION
Power Supply
FUNCTION
Ground
V
SS
FUNCTION
RDY/BUSY\
FUNCTION
Ready Busy
RES\
Reset
GENERAL DESCRIPTION
The AS8ER128K32 is a 4 Megabit Radiation Tolerant EEPROM
Module organized as 128K x 32 bit. User configurable to 256K x16
or 512Kx 8. The module achieves high speed access, low power con-
sumption and high reliability by employing advanced CMOS memory
technology.
The military grade product is manufactured in compliance to
MIL-STD 883, making the AS8ER128K32 ideally suited for military
or space applications.
The module is offered as a 68 lead 0.880 inch square ceramic
quad
fl
at pack. It has a max. height of 0.200 inch (non-shielded).
This package design is targeted for those applications which require
low profile SMT Packaging.
* Contact factory for more information. 2-sided shielding provided via Tungsten
lids on both sides. 6.5X typ. TID boost due to shielding. (Geostationary orbit)
Proven total dose 40K to 100K RADS. Micross can perform TID lot testing.
AS8ER128K32
Rev. 5.5 11/10
RDY/ BUSY\
RES\
FUNCTIONAL BLOCK DIAGRAM
For more products and information
please visit our web site at
www.micross.com
Micross Components reserves the right to change products or specifications without notice.
1
EEPROM
AS8ER128K32
TRUTH TABLE
MODE
Read
Standby
Write
Deselect
Wirte Inhibit
Data\ Polling
Program Reset
CE\
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
X
OE\
V
IL
X
3
WE\
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
RES\
V
H
X
V
H
V
H
X
X
V
H
V
IL
2
RDY/BUSY\
High-Z
High-Z
1
I/O
Dout
High-Z
Din
High-Z
---
---
Dout (I/O7)
High-Z
V
IH
V
IH
X
V
IL
V
IL
X
High-Z to V
OL
High-Z
---
---
V
OL
High-Z
NOTES:
1. RDY/Busy\ output has only active LOW V
OL
and high impedance state. It can not go to HIGH (V
OH
) state.
2. V
CC
-0.5 < V
H
< V
CC
+1.0
3. X : DON'T CARE
AS8ER128K32
Rev. 5.5 11/10
Micross Components reserves the right to change products or specifications without notice.
2
EEPROM
AS8ER128K32
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss
Vcc ....................................................................-0.6V to +7.0V
Operating Temperature Range
(1)
..................-55°C to +125°C
Storage Temperature Range .........................-65°C to +150°C
Voltage on any Pin Relative to Vss..............-0.5V to +7.0V
(2)
Max Junction Temperature**.......................................+150°C
Thermal Resistance junction to case (θ
JC
):
Package Type Q...........................................11.3° C/W
Package Type P & PN..................................2.8° C/W
NOTES:
1) Including electrical characteristics and data retention.
2) V
IN
MIN = -3.0V for pulse width < 20ns.
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This
is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
**Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow, and humid-
ity
(plastics).
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C<T
A
<125
o
C or -40
o
C to +85
o
C; Vcc = 5V + 10%)
PARAMETER
Input High Voltage
Input High Voltage (RES\)
Input Low Voltage
LOW INPUT Leakage(RES\ Signal)
HIGH INPUT Leakage(RES\ Signal)
INPUT LEAKAGE CURRENT
2
OUTPUT LEAKAGE CURRENT
2
Output High Voltage
Output Low Voltage
Supply Voltage
RES\=0V, VCC=5.5V
RES\=5.5V, VCC=5.5V
OV < V
IN
< V
CC
Outputs(s) Disabled,
OV < V
OUT
< V
CC
I
OH
= -0.4mA
I
OL
= 2.1mA
CONDITIONS
SYMBOL
V
IH
V
H
V
IL
I
LI
(RES)
I
HI
(RES)
I
LI
I
LO
V
OH
V
OL
V
CC
-10
-10
2.4
--
4.5
MIN
2.2
V
CC
-0.5
1
-0.3
-500
10
10
10
--
0.4
5.5
V
V
V
MAX
V
CC
+0.3
V
CC
+1.0
0.8
UNITS
V
V
V
NOTE:
1) V
IL
(MIN): -1.0V for pulse width < 20ns.
2) All other Signal pins except RES\
PARAMETER
CONDITIONS
Iout = 0mA, V
CC
= 5.5V
Cycle = 1μS, Duty = 100%
SYM
MAX
-15
80
UNITS
Power Supply Current:
Operating
I
cc3
Iout = 0mA, V
CC
= 5.5V
Cycle = MIN, Duty = 100%
CE\ = V
CC,
V
CC
= 5.5V
CE\ = V
IH,
V
CC
= 5.5V
I
CC1
I
CC2
260
1.4
12
mA
Power Supply Current:
Standby
mA
mA
AS8ER128K32
Rev. 5.5 11/10
Micross Components reserves the right to change products or specifications without notice.
3
EEPROM
AS8ER128K32
CAPACITANCE TABLE
1
(V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C)
SYMBOL
C
ADD
C
OE
C
WE,
C
CE
C
IO
PARAMETER
A0 - A16 Capacitance
OE\, RES\, RDY Capacitance
WE\ and CE\ Capacitance
I/O 0- I/O 31 Capacitance
MAX
40
40
12
20
UNITS
pF
pF
pF
pF
NOTE:
1. This parameter is guaranteed but not tested.
AC TEST CHARACTERISTICS
TEST SPECIFICATIONS
Input pulse levels...........................................V
SS
to 3V
Input rise and fall times...........................................5ns
Input timing reference levels.................................1.5V
Output reference levels.........................................1.5V
Output load................................................See Figure 1
NOTES:
Vz is programmable from -2V to + 7V.
I
OL
and I
OH
programmable from 0 to 16 mA.
Vz is typically the midpoint of V
OH
and V
OL
.
I
OL
and I
OH
are adjusted to simulate a typical resistive load
circuit.
Figure 1
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C or -40
o
C to +85
o
C; Vcc = 5V +10%)
DESCRIPTION
Address to Output Delay
CE\ to Output Delay
OE\ to Output Delay
Address to Output Hold
CE\ or OE\ high to Output Float (1)
RES\ low to Output Float (1)
RES\ to Output Delay
TEST CONDITIONS
CE\ = OE\ = V
IL
, WE\ = V
IH
OE\ = V
IL
, WE\ = V
IH
OE\ = V
IL
, WE\ = V
IH
CE\ = OE\ = V
IL
, WE\ = V
IH
OE\ = V
IL
, WE\ = V
IH
CE\ = OE\ = V
IL
, WE\ = V
IH
CE\ = OE\ = V
IL
, WE\ = V
IH
150
SYMBOL
t
ACC
t
CE
t
OE
t
OH
t
DF
t
DFR
t
RR
10
0
0
0
0
50
350
450
MIN
MAX
150
150
75
UNITS
ns
ns
ns
ns
ns
ns
ns
AS8ER128K32
Rev. 5.5 11/10
Micross Components reserves the right to change products or specifications without notice.
4
EEPROM
AS8ER128K32
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC WRITE CHARACTERISTICS
(-55
o
C < T
A
< +125
o
C; Vcc = 5V +10%)
SYMBOL
t
AS
t
AH
t
CS
t
CH
t
WS
t
WH
t
OES
t
OEH
t
DS
t
DH
t
WP
t
CW
t
DL
t
BLC
t
BL
t
WC
t
DB
t
DW
t
RP
t
RES
PARAMETER
Address Setup Time
Address Hold Time
CE\ to Write Setup Time (WE\ controlled)
CE\ Hold Time (WE\ controlled)
WE\ to Write Setup Time (CE\ controlled)
WE\ to Hold Time (CE\ controlled)
OE\ to Write Setup Time
OE\ to Hold Time
Data Setup Time
Data Hold Time
WE\ Pulse Width (WE\ controlled)
CE\ Pulse Width (CE\ controlled)
Data Latch Time
Byte Load Cycle
Byte Load Window
Write Cycle Time
Time to Device Busy
Write Start Time
Reset Protect Time
Reset High Time
(5)
MIN
0
0
0
0
0
0
0
(2)
MAX
UNITS
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
150
100
10
250
250
300
0.55
100
10
120
150
1
(4)
(3)
30
μs
μs
ms
ns
ns
μs
μs
100
READ TIMING WAVEFORM
ADDRESS
CE\
OE\
V
IH
HIGH-Z
t
RR
t
ACC
t
CE
t
OE
t
DF
t
OH
WE\
Data Out
DATA OUT VALID
t
DFR
RES\
AS8ER128K32
Rev. 5.5 11/10
Micross Components reserves the right to change products or specifications without notice.
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
