PN4303
PN4303
N-Channel General Purpose Amplifier
• This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources.
• Sourced from process 52.
1
TO-92
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Ratings
30
-30
50
-55 ~ 150
Units
V
V
mA
°C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
GS(off)
I
DSS
Parameter
Test Condition
I
G
= -1.0µA, V
DS
= 0
V
GS
= -10V, V
DS
= 0
V
DS
= 20V, I
D
= 1.0nA
V
DS
= -15V, V
GS
= 0
4.0
Min.
-30
-1.0
-6.0
10
Max.
Units
V
nA
V
mA
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
On Characteristics
Thermal Characteristics
T
a
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
125
357
Units
mW
mW/°C
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
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Definition of Terms
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Advance Information
Product Status
Formative or
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This datasheet contains the design specifications for
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