PHOTOTRANSISTOR OPTICAL
INTERRUPTER SWITCH
CNY28
PACKAGE DIMENSIONS
0.972 (24.7)
0.957 (24.3)
0.472 (12.0)
0.457 (11.6)
C
L
0.249 (6.35)
0.243 (6.15)
+
E
D
+
Ø 0.133 (3.4)
Ø 0.126 (3.2)
(2X)
C
L
0.39 (1.00)
0.34 (0.85)
0.755 (19.2)
0.745 (18.9)
0.129 (3.3)
0.119 (3.0)
0.103 (2.60) NOM
0.433 (11.0)
0.422 (10.7)
Optical
C
L
0.125 (3.2)
0.119 (3.0)
C
L
.295 (7.5)
.272 (6.9)
SCHEMATIC
0.315 (8.0)
0.110 (2.8)
0.091 (2.3)
1
4
2
1
3
4
PIN 1 ANODE
PIN 2 CATHODE
PIN 3 COLLECTOR
PIN 4 EMITTER
0.020 (0.51) (SQ)
2
3
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The CNY28 is a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The gap in the
housing provides a means of interrupting the signal with tape, cards, shaft encoders or other opaque material, switching the output
from an “ON” to an “OFF” state.
FEATURES
•
•
•
•
Opaque housing
Low cost
0.035” apertures
European “Pro Electron”
registered
2001 Fairchild Semiconductor Corporation
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PHOTOTRANSISTOR OPTICAL
INTERRUPTER SWITCH
CNY28
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
INPUT (EMITTER)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
OUTPUT (SENSOR)
Collector-Emitter Voltage
Emitter- Collector Voltage
Collector Current
Power Dissipation
(1)
NOTES:
1.
2.
3.
4.
Derate power dissipation linearly 1.67 mW/°C above 25°C.
RMA flux is recommended.
Methanol or isopropyl alcohols are recommended as cleaning agents.
Soldering iron
1/16”
(1.6mm) from housing.
V
CEO
V
ECO
I
C
P
D
30
4.5
20
150
V
V
mA
mW
I
F
V
R
P
D
50
6
100
mA
V
mW
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
Rating
-55 to +85
- 55 to +85
240 for 5 sec
260 for 10 sec
Units
°C
°C
°C
°C
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(T
A
= 25°C)
SYMBOL
MIN
TYP
MAX
UNITS
INPUT (EMITTER)
Forward Voltage
Reverse Leakage Current
OUTPUT (SENSOR)
Emitter-Collector Breakdown
Collector-Emitter Breakdown
Collector-Emitter Leakage
COUPLED
Collector Current
Collector Emitter
Saturation Voltage
Turn-On Time
Turn-Off Time
I
F
= 30 mA, V
CC
= 5 V, R
L
= 2.5 k
I
F
= 30 mA, V
CC
= 5 V, R
L
= 2.5 k
t
on
t
off
—
—
5
5
—
—
µs
µs
I
F
= 20 mA, V
CE
= 10 V
I
F
= 20 mA, I
C
= 25 µA
I
C(ON)
V
CE (SAT)
0.20
—
—
—
—
0.40
mA
V
I
E
= 100 µA, E
e
= 0
I
C
= 10 mA, E
e
= 0
V
CE
= 10 V, E
e
= 0
BV
ECO
BV
CEO
I
CEO
5.0
30
—
—
—
—
—
—
100
V
V
nA
I
F
= 10 mA
V
R
= 2 V
V
F
I
R
—
—
—
—
1.7
10
V
µA
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DS300281
PHOTOTRANSISTOR OPTICAL
INTERRUPTER SWITCH
CNY28
TYPICAL PERFORMANCE CURVES
Fig. 1 Output Current vs. Input Current
I
CE(ON)
- NORMALIZED OUTPUT CURRENT
I
CE(ON)
- NORMALIZED OUTPUT CURRENT
10.0
8.0
6.0
4.0
2.0
1.0
0.8
0.6
0.4
0.2
0.1
0.08
0.06
0.04
0.02
0.01
1
2
4
6
8 10
20
40 60 80 100
200
400 600
1000
10.0
8.0
6.0
4.0
Fig. 2 Output Current vs. Temperature
Normalized to: I
F
= 20 mA, V
CE
= 5 V, T
A
= 25˚C
Input Pulsed
I = 100 mA
F
2.0
I
F
= 60 mA
I
F
= 30 mA
1.0
0.8
0.6
0.4
Normalized to:
I
F
= 20 mA
V
CE
= 5 V
Pulsed
PW = 100 µs
PRR = 100 pps
I
F
= 20 mA
I
F
= 10 mA
0.2
I
F
= 5 mA
0.1
-55
-40
-20
0
20
40
60
80
100
I
F
- INPUT CURRENT (mA)
T
A
- TEMPERATURE (˚C)
Fig. 3 Saturation Voltage vs. Ambient Temperature
3.0
Fig. 4 Normalized Dark Current
vs. Ambient Temperature (Detector)
I
CEO
- NORMALIZED DARK CURRENT
10
3
V
CE
= 25 V
10
2
I
C
= 1.8 mA
I
F
20 mA
I
C
= 3.6 mA
I
F
60 mA
V
CE
- NORMALIZED
2.0
Normalized to:
I
C
= 1.8 mA
I
F
30 mA T
A
= 25˚C
Pulsed
PW = 100 µs, PRR = 100 pps
1.0
0,8
10
1
V
CE
= 10 V
1.0
Normalized to:
V
CE
= 25 V
T
A
= 25˚C
25
50
75
100
I
C
1.8 mA
=
I
F
30 mA
0,6
-50
-25
0
25
50
I
C
= 0.9 mA
I
F
15 mA
0.1
75
100
T
A
- TEMPERATURE (˚C)
T
A
- TEMPERATURE (˚C)
Fig. 5 Normalized Leakage Current
vs. Ambient Temperature (Emitter)
I
R
- NORMALIZED LEAKAGE CURRENT
10
3
10
2
10
1
1.0
Normalized to:
V
R
= 5 V
T
A
= 25˚C
25
50
75
100
0.1
T
A
- TEMPERATURE (˚C)
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PHOTOTRANSISTOR OPTICAL
INTERRUPTER SWITCH
CNY28
TYPICAL PERFORMANCE CURVES
Fig. 6 Switching Time vs. Load Resistance
4.5
4.0
Fig. 7 Output Current vs. Distance
I
CE (ON)
- NORMALIZED OUTPUT CURRENT
78.7
1.00
157.5
236.2
315
393.7
t
ON
AND t
OFF
NORMALIZED TO 2.5 K
3.0
V
CC
= 5 V
75
I
F
= R A
L
PW = 300 µs
PRR = 100 pps
Normalized to:
RL = 2.5 k
R
L
I
F
t
ON
0.1
2.0
1.5
Normalized
to value with
shield removed
t
OFF
0.01
Black
Shield
0.001
+
E
D
+
1.0
0.9
0.8
0.7
0.6
0.5
0.45
2K
+
V
CC
d
o
Black
Shield
d
o
0.0001
0
2
4
6
8
10
3K
4K
5K
6K
7K 8K 9K 10K
R
L
- LOAD RESISTANCE ( )
d = DISTANCE (mm)
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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