New Product
TV210T...S4PV Series
Vishay General Semiconductor
PAR
®
Transient Voltage Suppressor
Bare Die (210 mils x 210 mils)
a
c
FEATURES
e
• Junction passivation optimized
anisotropic rectifier technology
design
passivated
• 6600 W peak pulse power capability with a 10/1000 μs
waveform in equivalent package
d b
A
(2)
C
(1)
• Unidirectional polarity only
CIRCUIT DIAGRAM
A
(2)
C
(1)
Notes
(1)
Front metallization side: Cathode
(2)
Back metallization side: Anode
MECHANICAL DATA
DIMENSIONS in inches (millimeters)
DEVICE
(1)
TYPICAL TOTAL METAL THICKNESS
FRONT SIDE C
METAL
Ni/Au
THICKNESS
0.75 μm
BACK SIDE A
METAL
Ni/Au
THICKNESS
0.75 μm
ASSEMBLY
CHIP SIZE
a, b
min.
max.
0.210
(5.334)
SOLDERABLE
c, d
min.
0.196
(4.978)
max.
0.198
(5.029)
CHIP
THICKNESS
e
min.
0.011
(0.279)
max.
0.013
(0.330)
TV210T...S4PV
Solderable
0.208
(5.283)
Note
(1)
Refer to Device Code definition
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
FINISH GOOD (for reference not guarantee for bare die)
BREAKDOWN
TEST
VOLTAGE
V
BR (1)
AT I
T
(V) CURRENT
I
T
(mA)
MIN.
TV210T010S4PV
TV210T011S4PV
TV210T012S4PV
TV210T013S4PV
TV210T014S4PV
TV210T015S4PV
TV210T016S4PV
TV210T017S4PV
TV210T018S4PV
TV210T020S4PV
TV210T022S4PV
TV210T024S4PV
TV210T026S4PV
TV210T028S4PV
TV210T030S4PV
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
MAX.
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
MAXIMUM
STAND-OFF REVERSE
VOLTAGE
LEAKAGE
V
WM
(V)
AT V
WM
I
D
(μA)
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
MAXIMUM
CLAMPING
VOLTAGE
(2)
V
C
AT I
PPM
(V)
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
(A)
388
363
332
307
284
270
254
239
226
204
186
170
157
145
136
OPERATING
JUNCTION
TEMPERATURE
RANGE
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
PACKAGE
EQUIVALENT
PRODUCT
(3)
SM8S10A
SM8S11A
SM8S12A
SM8S13A
SM8S14A
SM8S15A
SM8S16A
SM8S17A
SM8S18A
SM8S20A
SM8S22A
SM8S24A
SM8S26A
SM8S28A
SM8S30A
DEVICE
Document Number: 89227
Revision: 20-May-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
TV210T...S4PV Series
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
FINISH GOOD (for reference not guarantee for bare die)
BREAKDOWN
TEST
VOLTAGE
V
BR (1)
AT I
T
(V) CURRENT
I
T
(mA)
MIN.
TV210T033S4PV
TV210T036S4PV
TV210T040S4PV
TV210T043S4PV
36.7
40.0
44.4
47.8
MAX.
40.6
44.2
49.1
52.8
5
5
5
5
MAXIMUM
STAND-OFF REVERSE
VOLTAGE
LEAKAGE
V
WM
(V)
AT V
WM
I
D
(μA)
33
36
40
43
10
10
10
10
MAXIMUM
CLAMPING
VOLTAGE
(2)
V
C
AT I
PPM
(V)
53.3
58.1
64.5
69.4
(A)
124
114
102
95.1
OPERATING
JUNCTION
TEMPERATURE
RANGE
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
- 55 °C to + 175 °C
PACKAGE
EQUIVALENT
PRODUCT
(3)
SM8S33A
SM8S36A
SM8S40A
SM8S43A
DEVICE
Notes
(1)
Pulse test: t
50 ms
p
(2)
Non-repetitive current pulse, per fig. 1
(3)
Package equivalent product quality level information will provide per customer request but only for reference no guarantee bare die can meet
the same
PACKAGING
DEVICE
TV210T...S4PV
PACKAGE CODE
V
DELIVERY MODE
12 mm tape/8 mm pitch, 7" diameter plastic tape and reel
BASE QUANTITY
3000
CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
150
t
r
= 10 μs
Peak Value
I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
T
J
= 25 °C
Pulse Width (t
d
)
is Defined as the Point
Where the Peak Current
Decays to 50 % of I
PPM
100
Half Value - I
PP
I
PPM
2
50
10/1000 μs Waveform
as Defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 1 - Pulse Waveform
www.vishay.com
2
For technical questions within your region, please contact one of the following:
Document Number: 89227
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 20-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
TV210T...S4PV Series
Vishay General Semiconductor
DEVICE CODE
TV
1
1
2
3
4
5
6
7
8
210
2
T
3
010
4
S
5
4
6
P
7
V
8
-
-
-
-
-
-
-
-
Transient Voltage Suppressor
Die dimensions in mils
Patented PAR TVS
Breakdown voltage (V
BR
)
Wafer diameter in inches
Quality level code
Packaging (see Packaging table)
P = Packaged die, high reliability grade
(1)
O = Packaged die, commercial grade
(1)
N = Non packaged die
(2)
B = Named as breakdown voltage (V
BR
)
T = Named as stand-off voltage (V
WM
)
L = Load dump rectifier
A = Bondable
S = Solderable
Chip surface metallization (see Mechanical Data table)
4 = 4" wafer
6 = 6" wafer
Notes
(1)
Packaged die
• Existing die in qualified package
(2)
Non packaged die
• Existing fab. process
• Non standard die metal
• Die metal has been qualified
• No production in packaged form
Document Number: 89227
Revision: 20-May-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Revision: 12-Mar-12
1
Document Number: 91000