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MT48V8M32LFB5-8 TR

产品描述SDRAM - 移动 LPSDR 存储器 IC 256Mb(8M x 32) 并联 125 MHz 7 ns 90-VFBGA(8x13)
产品类别半导体    存储器   
文件大小2MB,共75页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 全文预览

MT48V8M32LFB5-8 TR概述

SDRAM - 移动 LPSDR 存储器 IC 256Mb(8M x 32) 并联 125 MHz 7 ns 90-VFBGA(8x13)

MT48V8M32LFB5-8 TR规格参数

参数名称属性值
类别
厂商名称Micron Technology
包装卷带(TR)剪切带(CT)
存储器类型易失
存储器格式DRAM
技术SDRAM - 移动 LPSDR
存储容量256Mb(8M x 32)
存储器接口并联
写周期时间 - 字,页15ns
电压 - 供电2.3V ~ 2.7V
工作温度0°C ~ 70°C(TA)
安装类型表面贴装型
封装/外壳90-VFBGA
供应商器件封装90-VFBGA(8x13)
时钟频率125 MHz
访问时间7 ns
基本产品编号MT48V8M32

文档预览

下载PDF文档
256Mb: x32 Mobile SDRAM
Features
Mobile SDRAM
MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks
For the latest data sheet, refer to Micron’s Web site:
www.micron.com/products/dram/mobile
Features
Low voltage power supply
Partial array self refresh power-saving mode
Temperature Compensated Self Refresh (TCSR)
Deep power-down mode
Programmable output drive strength
Fully synchronous; all signals registered on positive
edge of system clock
Internal pipelined operation; column address can
be changed every clock cycle
Internal banks for hiding row access/precharge
Programmable burst lengths: 1, 2, 4, 8, or full page
Auto precharge, includes concurrent auto
precharge, and auto refresh modes
Self-refresh mode; standard and low power
64ms, 4,096-cycle refresh
LVTTL-compatible inputs and outputs
Commercial and industrial temperature ranges
Supports CAS latency of 1, 2, 3
Options
• V
DD
/V
DD
Q
• 3.3V/3.3V
• 2.5V/2.5V
• 1.8V/1.8V
• Configurations
• 8 Meg x 32 (2 Meg x 32 x 4 banks)
• Package/Ballout
• 90-ball VFBGA (8mm x 13mm)
(Standard)
• 90-ball VFBGA (8mm x 13mm)
(Lead-free)
• Timing (Cycle Time)
• 7.5ns @ CL = 3 (133 MHz)
• 7.5ns @ CL = 2 (104 MHz)
• 8ns @ CL = 3 (125 MHz)
• 8ns @ CL = 2 (104 Mhz)
• 10ns @ CL = 3 (100 MHz)
• 10ns @ CL = 2 (83 Mhz)
• Operating Temperature Range
• Commercial (0° to +70°C)
• Industrial (-40°C to +85°C)
Marking
LC
V
H
8M32
F5
B5
-75
-75
-8
-8
-10
-10
None
IT
Table 1: Addressing
8 Meg x 32
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
2 Meg x 32 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
Table 2: Key Timing Parameters
CL = CAS (READ) latency
Speed
Grade
-75
-8
-10
-75
-8
-10
Clock
Frequency
133 MHz
125 MHz
100 MHz
133 MHz
104 MHz
83 MHz
Access Time
CL = 2
7ns
8ns
8ns
CL = 3
6ns
7ns
7ns
-
Setup
Time
2.5ns
2.5ns
2.5ns
2.5ns
2.5ns
2.5ns
Hold
Time
1ns
1ns
1ns
1ns
1ns
1ns
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_1.fm - Rev. G 6/05
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

 
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