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CY15B016J-SXA

产品描述FRAM(铁电体 RAM) 存储器 IC 16Kb(2K x 8) I²C 8-SOIC
产品类别半导体    存储器   
文件大小363KB,共17页
制造商Cypress(赛普拉斯)
标准
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CY15B016J-SXA概述

FRAM(铁电体 RAM) 存储器 IC 16Kb(2K x 8) I²C 8-SOIC

CY15B016J-SXA规格参数

参数名称属性值
类别
厂商名称Cypress(赛普拉斯)
系列Automotive, AEC-Q100, F-RAM™
包装管件
存储器类型非易失
存储器格式FRAM
技术FRAM(铁电体 RAM)
存储容量16Kb(2K x 8)
存储器接口I²C
电压 - 供电2.7V ~ 3.65V
工作温度-40°C ~ 85°C(TA)
安装类型表面贴装型
封装/外壳8-SOIC(0.154",3.90mm 宽)
供应商器件封装8-SOIC
时钟频率1 MHz
基本产品编号CY15B016

文档预览

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CY15B016J
16-Kbit (2K × 8) Serial (I
2
C) Automotive-A
F-RAM
16-Kbit (2K × 8) Serial (I
2
C) Automotive-A F-RAM
Features
Functional Description
The CY15B016J is a 16-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM, the CY15B016J performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The CY15B016J
is capable of supporting 10
14
read/write cycles, or 100 million
times more write cycles than EEPROM.
These capabilities make the CY15B016J ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The CY15B016J provides substantial benefits to users of serial
(I
2
C) EEPROM as a hardware drop-in replacement. The device
specifications are guaranteed over an automotive-a temperature
range of –40
C
to +85
C.
16-Kbit ferroelectric random access memory (F-RAM) logically
organized as 2K × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire Serial interface (I
2
C)
Up to 1-MHz frequency
2
Direct hardware replacement for serial (I C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100
A
active current at 100 kHz
3
A
(typ) standby current
Voltage operation: V
DD
= 2.7 V to 3.65 V
Automotive-A temperature: –40
C
to +85
C
8-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
Counter
Address
Latch
11
2Kx8
F-RAM Array
8
SDA
Serial to Parallel
Converter
Data Latch
8
SCL
WP
Control Logic
Cypress Semiconductor Corporation
Document Number: 002-10183 Rev. *B
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised April 20, 2017
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