DACO SEMICONDUCTOR CO., LTD.
Features
High Surge Capability
Types Up to 1000V V
RRM
1N1183(R)
T HR U
1N3768(R)
STANDARD RECOVERY DIODE STUD TYPES
35A
35Amp Recti er
50-1000 Volts
DO-5
Maximum Ratings
Operating Temperature:
Storage Temperature:
-55 C to +175
M
-55 C to +175
J
Part Number
1N1183(R)
1N1184(R)
1N1186(R)
1N1188(R)
1N1189(R)
1N1190(R)
1N3765(R)
1N3766(R)
1N3767(R)
1N3768(R)
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
500V
600V
700V
800V
900V
1000V
Maximum
RMS Voltage
35V
70V
140V
280V
354V
420V
495V
566V
636V
707V
Maximum DC
Blocking
Voltage
50V
100V
200V
400V
500V
600V
700V
800V
900V
1000V
K
P
D
B
N
C
G
F
A
E
Notes :
1.Standard Polarity Stud is Cathod
2.Reverse Polarity: Stud is Anode
Electrical Characteristics @ 25
Average Forward
(Per pkg)
Current
Peak
1N1183(R)~1N1190(R)
F orward
Surge
1N3765(R)~1N3768(R)
Cur rent
Maximum
Instantaneous
Forward Voltage *
Maximum
Instantaneous
Reverse Current At
Rated DC Blocking
Voltage
(Per leg)
Unless Otherwise Specified
35 A
595A
475A
1.1V
I
FM
= 35A
T
J
= 25
T
J
= 25
T
J
= 175
T
C
= 150
I
F(AV)
I
FSM
V
F
8.3ms , half sine
DIM
Min
A
B
C
D
E
F
0.669
-----
-----
0.422
0.115
-----
-----
0.236
-----
-----
0.140
Inches
Max
1/4 –28 UNF
0.687
0.794
1.020
0.453
0.200
0.460
0.280
-----
0.589
0.063
0.175
17.19
-----
-----
10.72
2.93
-----
-----
6.00
-----
-----
3.56
Min
Millimeters
Max
17.44
20.16
25.91
11.50
5.08
11.68
7.00
-----
14.96
1.60
4.45
I
R
μ
10 A
12 mA
Maximum Thermal
Resistance Junction
To Case
Mounting torque
R jc
Inch pounds
(in-pb)
1.18 C/W
30
G
J
K
M
N
Pulse Test: Pulse Width 300
μsec.
Duty Cycle
<
2%
P
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DACO SEMICONDUCTOR CO., LTD.
Figure.1-Typical Forward Characteristics
42
1N1183(R) THRU 1N3768(R)
Figur.2-Forward Derating Curve
50
Average Forward Rectifer Current -
Ampere
35
35
28
21
14
7
Instantaneous Forward Current- Amperes versu
Amp
5
4
2
1.0
.4
.3
.2
.1
.0
Amp
S ingle Phase,e, Hal f W ave
Single P has Half Wave
60HzResistive or Inductive Load
60Hz Res is tive or Inductive Load
0
0
30
60
90
120
150
180
10
25 C
Case Temperature
-
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Figure.4- Typical Reverse Characteristics
50
T
J
=175
Volts
Instantaneous Forward Voltage-Volts
Figure.3-Peak Forward Surge Current
600
8.3ms Single Half
Sine Wave
JEDEC method T
J
=25
Instantaneous Reverse Leakage Current- m A
10
Peak Forward Surge Current -Ampere
Amp
500
400
300
200
100
1N3765(R)~1N3768(R)
1
2
4
6
1
T
J
=125
mA
1N1183(R)~1N1190(R)
.1
T
J
=75
.01
T
J
=25
8 10
20
40
60 80 100
Cycles
Number Of Cycles At 60Hz- Cycles
.001
0
20
40
Volts
Reverse Voltage - Volts (%)
60
80
100
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