Data Sheet
January 2006
E2500-Type 2.5 Gb/s Electroabsorption Modulated Isolated
Laser Module (EML) for Ultralong-Reach Applications
Applications
n
n
n
n
SONET/SDH extended-reach applications
High-capacity DWDM system applications
High-speed data communications
Digitized video
Description
The E2500-Type EML is a 1.5 µm laser with an
integrated electroabsorptive modulator packaged in
an industry-standard, 14-pin butterfly package. The
device has been designed to be used in 2.5 Gb/s
extended-reach applications where the distances
between regenerators is in the range of 150 km—
1000 km. To boost the transmitter power high
enough to reach the receiver, the device typically is
coupled with an erbium-doped fiber amplifier (EDFA).
The standard product is specified for use up to 360
km (E2505 Series) and 600 km (E2502 Series).
The E2500 EML can replace external modulators in
many applications. The nominal input impedance for
the modulator is 50
Ω.
By integrating the modulator
with the laser chip, the device offers a compact, cost-
effective solution for extended-reach transmission
applications. It can also be specified for WDM
applications where wavelength selection is required.
CyOptics is providing devices compatible with the
ITU-T wavelength standards.
The E2500 EML features an integrated modulator
and laser chip, and provides a compact, cost-effective solu-
tion for extended-reach transmissions.
Features
n
n
n
n
n
n
n
n
Integrated electroabsorptive modulator
1.5 µm wavelength
Characterized for 2.5 Gb/s operation
Very low dispersion penalty over 600 km
Low modulation voltage
Temperature stabilized
Wavelengths selectable to ITU-T standards
Ultrastable wavelength aging performance for
DWDM systems
E2500-Type 2.5 Gb/s Electroabsorption Modulated
Isolated Laser Module (EML)
Data Sheet
January 2006
Description
(continued)
The package also contains a thermoelectric cooler,
thermistor, back-facet monitor, and an optical isolator.
This device exhibits excellent wavelength stability,
supporting operation at 100 Gb/s channel spacing,
assuming an end-of-life condition of < ±100 pm over 20
years for wavelength aging, with very low FIT rates.
Wavelength stabilization schemes are not required in
DWDM systems of this type, using the E2500-Type
EML.
The E2500-Type EML is qualified for DWDM appli-
cations to
Telcordia
™
TA-TSY-000468.
Pin Information
Table 1. Pin Assignments
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Thermistor
Thermistor
Laser anode
Monitor anode
Monitor cathode
TEC (+)
TEC (–)
Case ground
Case ground
Case ground
Laser modulator ground
Modulator anode (–)/50
Ω
RF input
Laser/modulator ground
Case ground
Description
Module Characteristics
Package
Type
Fiber
Connector
RF Input
Bit Rate
14-pin butterfly with internal isolator
Standard single mode
ST
50
Ω
nominal
2.5 Gb/s
7
(−)
6
(+)
(+)
5
(−)
4
(+)
3
2
1
NOMINAL
IMPEDANCE
50
Ω
10 k
Ω
@ 25 °C
TEC
CASE OR
PACKAGE
GROUNDS
(+)
8
9
10
11
(−)
12
13 14
ISOLATOR
1-891a (F)
Figure 1. E2500 EML Schematic
2
For additional information and latest specifications, see our website:
www.cyoptics.com
Data Sheet
January 2006
E2500-Type 2.5 Gb/s Electroabsorption Modulated
Isolated Laser Module (EML)
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-
lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operations section of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.
Parameter
Laser Diode Reverse Voltage
Laser Diode Forward Current
Optical Output Power
Modulator Reverse Voltage
Modulator Forward Voltage
Monitor Diode Reverse Voltage
Monitor Diode Forward Current
Storage Temperature Range
Operating Temperature Range
Conditions
CW
CW
CW
—
—
—
—
—
—
Limit
2
150
10
5
1
10
1
–
40 to +85
0 to 70
Unit
V
mA
mW
V
V
V
mA
°C
°C
Characteristics
Table 2. Optical and Electrical Specifications
Parameter
Threshold Current (BOL)
Forward Voltage
Operating Current
Threshold Power
Fiber Output Power (peak)
Peak Wavelength (wavelength can be
specified to the ITU-T wavelength chan-
nels)
Side-mode Suppression Ratio
Time Resolved Spectroscopy (chirp),
E2505 Series
Symbol
I
TH
V
F
I
OP
P
TH
P
PK
Conditions
T
LASER CHIP
= T
OP
I
f
= I
OP
@ T
OP
T
LASER CHIP
= T
OP
T
LASER CHIP
= T
OP
I
f
= I
TH
, V
M
= 0 V
T
LASER CHIP
= T
OP
V
M
= 0 V, I
f
= I
OP
V
M
= 0 V
T
LASER CHIP
= T
OP
,
I
f
= I
OP
Min
5
—
50
—
1
Max
35
2.0
100
80
—
Unit
mA
V
mA
µW
dBm
nm
Laser:
Laser T
OP
(temperature of laser submount) = 15
°C
to 35
°C,
except where noted.
λ0
1530 1563
SMSR
TRS
P-P
V
M
= 0 V, I
f
= I
OP
,T
OP
2.5 Gb/s
V
LOW
= –1.5 V to –3.0 V
V
HIGH
= 0 V
If = I
OP
@ T
OP
2.5 Gb/s
V
LOW
= –1.5 V to –3.0 V,
V
HIGH
= –0.3 V
I
f
= I
OP
@ T
OP
2.5 Gb/s
360 km (E2505)
600 km (E2502)
V
LOW
= –1.5 V to –3.0 V
V
HIGH
= 0 V (E2505), –0.3 V (E2502)
I
F
= I
OP
@ T
OP
30
—
—
0.25
dB
Å
Time Resolved Spectroscopy (chirp),
E2502 Series
TRS
P-P
—
0.15
Å
Dispersion Penalty
DP
—
2.0
dB
For additional information and latest specifications, see our website:
www.cyoptics.com
3
E2500-Type 2.5 Gb/s Electroabsorption Modulated
Isolated Laser Module (EML)
Data Sheet
January 2006
Characteristics
(continued)
Table 2. Optical and Electrical Specifications
(continued)
Parameter
Modulator
Extinction Ratio
RF Return Loss (0 GHz to 2 GHz)
RF Return Loss (2 GHz to 3 GHz)
RF Return Loss (3 GHz to 5 GHz)
–3 dB Bandwidth
Modulator Current @
V
M
= 0 V,
I
f
= 50 mA
E
RRF
V
M
= 0 V to –3.0 V, 2.5 Gb/s
V
M
= –V
PP
/2
I
f
= I
OP
V
M
= –V
PP
/2
I
f
= I
OP
V
M
= –V
PP
/2
I
f
= I
OP
V
M
= –V
PP
/2
I
f
= I
OP
Symbol
Conditions
Min
10
10
7
3
3.5
—
—
40
—
—
9.5
10
Max
—
—
—
—
—
15
125
1100
0.1
25
10.5
100
Unit
dB
dB
dB
dB
GHz
mA
ps
µA
µA
pF
kΩ
µA
—
A
V
W
°C
dB
S
11
S
11
S
11
BW
—
t
R
/
t
F
I
BD
I
D
—
—
T
LASER CHIP
= T
OP
V
BD
= 5 V, I
f
= I
OP
T
LASER CHIP
= T
OP
, V
BD
= –5 V
V
BD
= 5 V, f = 1 MHz
Rise/Fall Time (20% to 80%)
Monitor Diode
Monitor Current
Dark Current
Capacitance
Thermistor
Resistance
Thermistor Current
Thermistor B Constant
Thermoelectric Cooler
TEC Current
TEC Voltage
TEC Power
TEC Capacity
Laser Module
Optical Isolation
C
R
THERM
I
TC
T = 25
°C
—
—
T
LASER CHIP
= 15
°C
T
CASE
= 70
°
C
T
LASER CHIP
= 15
°C
T
CASE
= 70
°C
T
LASER CHIP
= 15
°C
T
CASE
= 70
°C
T
CASE
= 70
°C
T
CASE
= 0
°C
to 65
°C
B
I
TEC
V
TEC
P
TEC
3700 4100
—
—
—
*
30
1.3
2.6
3.0
—
—
∆T
—
* Operation at a DT of 70 °C – TSET is guaranteed, where TSET is the laser temperature required to achieve the required ITU wavelength,
over life, in a DWDM system (TSET range is 15 °C to 35 °C). In a non-WDM application, TSET is 25 °C.
4
For additional information and latest specifications, see our website:
www.cyoptics.com
Data Sheet
January 2006
E2500-Type 2.5 Gb/s Electroabsorption Modulated
Isolated Laser Module (EML)
Characteristics
(continued)
184.5 mV
20 mV
/div
I = 50
V = –1.04 + 2.08 pp
P= –0.5 dBm
–15.5 mV
91.65 ns
100 ps/div
92.65 ns
1-500(C).d
Figure 2. Typical Eye Pattern at 2.5 Gb/s
For additional information and latest specifications, see our website:
www.cyoptics.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
