N0540 –
T
SOLETE
– OB
TN0535
TN0540
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
350V
400V
†
R
DS(ON)
(max)
22Ω
22Ω
I
D(ON)
(min)
250mA
250mA
V
GS(th)
(max)
2.0V
2.0V
Order Number / Package
TO-92
TN0535N3
TN0540N3
Die
†
TN0535ND
TN0540ND
MIL visual screening available
7
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Features
■
Low threshold —2.0V max.
■
High input impedance
■
Low input capacitance — 48pF typical
■
Fast switching speeds
■
Low on resistance
■
Free from secondary breakdown
■
Low input and output leakage
■
Complementary N- and P-channel devices
Applications
■
Logic level interfaces – ideal for TTL and CMOS
■
Solid state relays
■
Battery operated systems
■
Photo voltaic drives
■
Analog switches
■
General purpose line drivers
■
Telecom switches
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
SGD
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
TO-92
Note: See Package Outline section for dimensions.
7-43
TN0535/TN0540
Thermal Characteristics
Package
TO-92
*
I
D
(continuous)*
140mA
I
D
(pulsed)
750mA
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
140mA
I
DRM
750mA
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
TN0540
TN0535
Min
400
350
0.8
-3.5
2.0
-4.5
100
10
500
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
250
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
125
550
750
20
19
0.9
200
48
11
3.0
5.0
5.0
5.0
5.0
0.8
400
60
15
8.0
8.0
8.0
9.0
8.0
1.2
V
ns
V
GS
= 0V, I
SD
= 150mA
V
GS
= 0V, I
SD
= 150mA
ns
V
DD
= 25V,
I
D
= 250mA,
R
GEN
= 25Ω
pF
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
22
22
1.5
%/°C
m
Ω
V
mV/°C
nA
µA
µA
mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 10V, I
D
= 150mA
V
GS
= 10V, I
D
= 0.1A
V
DS
= 25V, I
D
= 0.1A
Typ
Max
Unit
V
Conditions
V
GS
= 0V, I
D
= 1mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
N0540 –
T
SOLETE
– OB
V
DD
R
L
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
7-44
Ω
OUTPUT
D.U.T.
N0540 –
Typical Performance Curves
T
OLETE
– OBS
Output Characteristics
1.0
0.5
TN0535/TN0540
Saturation Characteristics
V
GS
= 10V
0.8
0.4
8V
6V
V
GS
= 10V
I
D
(amperes)
I
D
(amperes)
0.6
0.3
6V
4V
0.4
0.2
4V
0.2
0.1
2V
0
0
20
40
60
80
100
0
0
2
4
6
2V
8
10
V
DS
(volts)
Transconductance vs. Drain Current
0.5
2.0
V
DS
(volts)
Power Dissipation vs. Case Temperature
7
V
DS
= 25V
0.4
1.6
G
FS
(siemens)
P
D
(watts)
0.3
T
A
= -55
°
C
T
A
= 25
°
C
1.2
TO-92
0.2
T
A
= 125
°
C
0.8
0.1
0.4
0
0
0.1
0.2
0.3
0.4
0.5
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
1.0
1.0
T
C
(
°
C)
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-92 (pulsed)
0.8
TO-92 (DC)
I
D
(amperes)
0.1
0.6
0.01
T
C
= 25
°
C
0.4
0.2
TO-92
P
D
= 1W
T
C
= 25
°
C
0.001
1
10
100
1000
0
0.001
0.01
0.1
1
10
V
DS
(volts)
t
p
(seconds)
7-45
N0540 –
T
Typical Performance Curves
OLETE
– OBS
BV
DSS
Variation with Temperature
50
1.1
40
TN0535/TN0540
On-Resistance vs. Drain Current
V
GS
= 5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
30
1.0
V
GS
= 10V
20
10
0.9
0
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1.0
T
j
(
°
C)
Transfer Characteristics
0.5
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
2.4
1.6
V
DS
= 25V
0.4
25
°
C
2.0
1.4
0.3
1.6
1.2
125
°
C
0.2
V
(th)
@ 1mA
1.0
1.2
0.1
0.8
0
0
2
4
6
8
10
-50
0
50
100
150
0.8
0.4
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
10
T
j
(
°
C)
Gate Drive Dynamic Characteristics
V
DS
= 10V
8
f = 1MHz
75
V
DS
= 40V
C (picofarads)
V
GS
(volts)
6
150 pF
4
50
C
ISS
25
2
C
OSS
C
RSS
0
0
10
20
30
40
0
0
75 pF
0.4
0.8
1.2
1.6
2.0
V
DS
(volts)
Q
G
(nanocoulombs)
7-46
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
T
A
= -55
°
C
R
DS
@ 10V, 0.15A
I
D
(amperes)
嵌入式系统
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