RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN
| 参数名称 | 属性值 |
| 厂商名称 | Infineon(英飞凌) |
| 包装说明 | FLANGE MOUNT, R-CDFM-F2 |
| 针数 | 3 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | SOURCE |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 14 V |
| 最大漏极电流 (Abs) (ID) | 2.8 A |
| 最大漏极电流 (ID) | 2.8 A |
| FET 技术 | METAL SEMICONDUCTOR |
| 最高频带 | C BAND |
| JESD-30 代码 | R-CDFM-F2 |
| JESD-609代码 | e3 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | DEPLETION MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 18 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | MATTE TIN |
| 端子形式 | FLAT |
| 端子位置 | DUAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE |
| Base Number Matches | 1 |
| CLY35-00ES | CLY35-05ES | CLY35-00H | CLY35-00P | CLY35-00S | CLY35-10S | CLY35-05P | CLY35-10H | CLY35-10ES | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN |
| 厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
| 包装说明 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 |
| 针数 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 外壳连接 | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 14 V | 14 V | 14 V | 14 V | 14 V | 14 V | 14 V | 14 V | 14 V |
| 最大漏极电流 (Abs) (ID) | 2.8 A | 2.8 A | 2.8 A | 2.8 A | 2.8 A | 2.8 A | 2.8 A | 2.8 A | 2.8 A |
| 最大漏极电流 (ID) | 2.8 A | 2.8 A | 2.8 A | 2.8 A | 2.8 A | 2.8 A | 2.8 A | 2.8 A | 2.8 A |
| FET 技术 | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
| 最高频带 | C BAND | C BAND | C BAND | C BAND | C BAND | C BAND | C BAND | C BAND | C BAND |
| JESD-30 代码 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 |
| JESD-609代码 | e3 | e3 | e3 | e3 | e3 | e3 | e3 | e3 | e3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 18 W | 18 W | 18 W | 18 W | 18 W | 18 W | 18 W | 18 W | 18 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 端子面层 | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | - | - | - |
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