19-4177; Rev 0; 7/08
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
General Description
The MAX19996 single, high-linearity downconversion
mixer provides 8.7dB conversion gain, +24.5dBm IIP3,
and 9.6dB noise figure for 2000MHz to 3000MHz WCS,
LTE, WiMAX™, and MMDS wireless infrastructure appli-
cations. With an 1800MHz to 2550MHz LO frequency
range, this particular mixer is ideal for low-side LO
injection receiver architectures. High-side LO injection
is supported by the MAX19996A, which is pin-for-pin
and functionally compatible with the MAX19996.
In addition to offering excellent linearity and noise perfor-
mance, the MAX19996 also yields a high level of compo-
nent integration. This device includes a double-balanced
passive mixer core, an IF amplifier, and an LO buffer.
On-chip baluns are also integrated to allow for single-
ended RF and LO inputs. The MAX19996 requires a
nominal LO drive of 0dBm, and supply current is typical-
ly 230mA at V
CC
= +5.0V or 149.5mA at V
CC
= +3.3V.
The MAX19996 is pin compatible with the MAX19996A
2300MHz to 3900MHz mixer. The device is also pin sim-
ilar with the MAX9984/MAX9986 400MHz to 1000MHz
mixers and the MAX9993/MAX9994/MAX9996 1700MHz
to 2200MHz mixers, making this entire family of down-
converters ideal for applications where a common PCB
layout is used for multiple frequency bands.
The MAX19996 is available in a compact 5mm x 5mm,
20-pin thin QFN lead-free package with an exposed
pad. Electrical performance is guaranteed over the
extended -40°C to +85°C temperature range.
Features
o
2000MHz to 3000MHz RF Frequency Range
o
1800MHz to 2550MHz LO Frequency Range
o
50MHz to 500MHz IF Frequency Range
o
8.7dB Typical Conversion Gain
o
9.6dB Typical Noise Figure
o
+24.5dBm Typical Input IP3
o
+11dBm Typical Input 1dB Compression Point
o
69dBc Typical 2RF-2LO Spurious Rejection at
P
RF
= -10dBm
o
Integrated LO Buffer
o
Integrated RF and LO Baluns for Single-Ended
Inputs
o
Low -3dBm to +3dBm LO Drive
o
Pin Compatible with the MAX19996A 2300MHz to
3900MHz Mixer
o
Pin Similar with the MAX9993/MAX9994/
MAX9996 1700MHz to 2200MHz Mixers and
MAX9984/MAX9986 400MHz to 1000MHz Mixers
o
Single +5.0V or +3.3V Supply
o
External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
MAX19996
Applications
2.3GHz WCS Base Stations
2.5GHz WiMAX and LTE Base Stations
2.7GHz MMDS Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
Private Mobile Radios
Military Systems
PART
MAX19996ETP+
Ordering Information
TEMP RANGE
-40°C to +85°C
PIN-PACKAGE
20 Thin QFN-EP*
MAX19996ETP+T
-40°C to +85°C
20 Thin QFN-EP*
+Denotes
a lead-free/RoHS-compliant package.
*EP
= Exposed pad.
T = Tape and reel.
WiMAX is a trademark of WiMAX Forum.
Pin Configuration appears at end of data sheet.
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
MAX19996
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND ...........................................................-0.3V to +5.5V
IF+, IF-, LOBIAS, LO, IFBIAS,
LEXT to GND ..........................................-0.3V to (V
CC
+ 0.3V)
RF, LO Input Power ........................................................+12dBm
RF, LO Current
(RF and LO is DC shorted to GND through a balun) ......50mA
Continuous Power Dissipation (Note 1) ..............................5.0W
θ
JA
(Notes 2, 3)..............................................................+38°C/W
θ
JC
(Notes 1, 3)................................................................13°C/W
Operating Case Temperature
Range (Note 4)........................................T
C
= -40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1:
Based on junction temperature T
J
= T
C
+ (θ
JC
x V
CC
x I
CC
). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details. The junction
temperature must not exceed +150°C.
Note 2:
Junction temperature T
J
= T
A
+ (θ
JA
x V
CC
x I
CC
). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to
www.maxim-ic.com/thermal-tutorial.
Note 4:
T
C
is the temperature on the exposed pad of the package. T
A
is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
CC
= +4.75V to +5.25V, no input AC signals. T
C
= -40°C to +85°C, unless otherwise noted. Typical val-
ues are at V
CC
= +5.0V, T
C
= +25°C, all parameters are production tested.) (Note 6)
PARAMETER
Supply Voltage
Supply Current
SYMBOL
V
CC
I
CC
CONDITIONS
MIN
4.75
TYP
5
230
MAX
5.25
245
UNITS
V
mA
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
CC
= +3.0V to +3.6V, no input AC signals. T
C
= -40°C to +85°C, unless otherwise noted. Typical values
are at V
CC
= +3.3V, T
C
= +25°C, parameters are guaranteed by design and not production tested, unless otherwise noted.)
PARAMETER
Supply Voltage
Supply Current
SYMBOL
V
CC
I
CC
Total supply current, V
CC
= +3.3V
CONDITIONS
MIN
3.0
TYP
3.3
149.5
MAX
3.6
UNITS
V
mA
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
RF Frequency
LO Frequency
SYMBOL
f
RF
f
LO
(Note 7)
(Note 7)
Using Mini-Circuits TC4-1W-17 4:1 transformer
as defined in the
Typical Application Circuit,
IF
matching components affect the IF frequency
range (Note 7)
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Note 7)
LO Drive Level
P
LO
CONDITIONS
MIN
2000
1800
TYP
MAX
3000
2550
UNITS
MHz
MHz
100
500
MHz
IF Frequency
f
IF
50
-3
250
+3
dBm
2
_______________________________________________________________________________________
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
CC
= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, P
LO
= -3dBm to +3dBm,
P
RF
= -5dBm, f
RF
= 2300MHz to 2800MHz, f
LO
= 2000MHz to 2500MHz, f
IF
= 300MHz, f
RF
> f
LO
, T
C
= -40°C to +85°C. Typical val-
ues are at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 2500MHz, f
LO
= 2200MHz, f
IF
= 300MHz, T
C
= +25°C, all parameters are
guaranteed by design and characterization, unless otherwise noted.) (Note 6)
PARAMETER
Conversion Power Gain
Conversion Power Gain Variation
vs. Frequency
Conversion Power Gain
Temperature Coefficient
Input 1dB Compression Point
Third-Order Input Intercept Point
Third-Order Input Intercept Point
Variation Over Temperature
SYMBOL
G
C
ΔG
C
TC
G
IP
1dB
IIP3
CONDITIONS
T
C
= +25°C (Note 5)
f
RF
= 2300MHz to 2800MHz for any
100MHz band
T
C
= -40°C to +85°C
T
C
= +25°C (Note 8)
f
RF
= 2500MHz, T
C
= +25°C (Note 8)
f
RF1
- f
RF2
= 1MHz, P
RF1
= P
RF2
= -5dBm,
T
C
= +25°C (Note 5)
f
RF
= 2300MHz to 2800MHz, f
IF
= 300MHz,
f
RF1
- f
RF2
= 1MHz, P
RF1
= P
RF2
= -5dBm,
T
C
= -40°C to +85°C
f
RF
= 2300MHz to 2700MHz, f
IF
= 300MHz,
single sideband, no blockers present
(Note 9)
f
RF
= 2500MHz, f
IF
= 300MHz, P
LO
= 0dBm,
V
CC
= +5.0V, T
C
= +25°C, single sideband,
no blockers present (Note 9)
f
RF
= 2000MHz to 3000MHz, single
sideband, no blockers present,
T
C
= -40°C to +85°C (Note 9)
+8dBm blocker tone applied to RF port, f
RF
= 2300MHz, f
LO
= 2110MHz, f
BLOCKER
=
2400MHz, P
LO
= -3dBm, V
CC
= +5.0V,
T
C
= +25°C (Note 9)
f
RF
= 2300MHz to
2700MHz, f
LO
=
2000MHz to 2400MHz,
f
SPUR
= f
LO
+ 150MHz
f
RF
= 2300MHz to
2700MHz, f
LO
=
2000MHz to 2400MHz,
f
SPUR
= f
LO
+ 100MHz
P
RF
= -10dBm
P
RF
= -5dBm
(Note 5)
P
RF
= -10dBm
P
RF
= -5dBm
(Note 5)
60
55
70
60
10
10.4
22
MIN
8.1
TYP
8.7
0.1
-0.012
11
11
24.5
MAX
9.3
UNITS
dB
dB
dB/°C
dBm
dBm
dBm
MAX19996
±0.5
dB
9.6
12
dB
Noise Figure
NF
SSB
9.6
10.5
Noise Figure Temperature
Coefficient
TC
NF
0.0183
dB/°C
Noise Figure Under Blocking
Condition
NF
B
20.8
25
dB
69
dBc
64
78
dBc
68
18
20
dB
dB
2RF-2LO Spur Rejection
2x2
3RF-3LO Spur Rejection
3x3
RF Input Return Loss
LO Input Return Loss
LO on and IF terminated into a matched
impedance
RF and IF terminated into a matched
impedance
_______________________________________________________________________________________
3
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
MAX19996
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical
Application Circuit,
V
CC
= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, P
LO
= -3dBm to +3dBm,
P
RF
= -5dBm, f
RF
= 2300MHz to 2800MHz, f
LO
= 2000MHz to 2500MHz, f
IF
= 300MHz, f
RF
> f
LO
, T
C
= -40°C to +85°C. Typical val-
ues are at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 2500MHz, f
LO
= 2200MHz, f
IF
= 300MHz, T
C
= +25°C, all parameters are
guaranteed by design and characterization, unless otherwise noted.) (Note 6)
PARAMETER
IF Output Impedance
SYMBOL
Z
IF
CONDITIONS
Nominal differential impedance at the IC’s
IF outputs
RF terminated into 50Ω,
LO driven by 50Ω
source, IF transformed
to 50Ω using external
components shown in
the
Typical Application
Circuit.
See the
IF Port
Return Loss vs. IF
Frequency
graph in the
Typical Operating
Characteristics
for
performance vs.
inductor values
f
IF
= 450MHz,
L1 = L2 = 120nH
MIN
TYP
200
MAX
UNITS
Ω
25
IF Output Return Loss
f
IF
= 350MHz,
L1 = L2 = 270nH
25
dB
f
IF
= 300MHz,
L1 = L2 = 470nH
25
Minimum RF-to-IF Isolation
Maximum LO Leakage at RF Port
Maximum 2LO Leakage at RF Port
Maximum LO Leakage at IF Port
f
RF
= 2300MHz to 2700MHz, P
LO
= +3dBm
(Note 5)
f
LO
= 1900MHz to 2500MHz, P
LO
= +3dBm
f
LO
= 1900MHz to 2500MHz, P
LO
= +3dBm
f
LO
= 1900MHz to 2500MHz, P
LO
= +3dBm
(Note 5)
34
-22.7
-21
-27.5
dB
dBm
dBm
dBm
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
RF and LO ports are driven from 50Ω sources, Typical values are at V
CC
= +3.3V, P
RF
= -5dBm,
P
LO
= 0dBm, f
RF
= 2500MHz, f
LO
= 2200MHz, f
IF
= 300MHz, T
C
= +25°C, unless otherwise noted.) (Note 6)
PARAMETER
Conversion Power Gain
Conversion Power Gain Variation
vs. Frequency
Gain Variation Over Temperature
Input 1dB Compression Point
Third-Order Input Intercept Point
Third-Order Input Intercept
Variation Over Temperature
Noise Figure
Noise Figure Temperature
Coefficient
2RF-2LO Spur Rejection
NF
SSB
TC
NF
2x2
SYMBOL
G
C
ΔG
C
TC
G
IP
1dB
IIP3
f
RF
= 2300MHz to 2800MHz for any
100MHz band
T
C
= -40°C to +85°C
(Note 8)
f
RF1
= 2500MHz, f
RF2
= 2501MHz, f
LO
=
2200MHz, P
RF1
= P
RF2
= -5dBm
f
RF1
= 2500MHz, f
RF2
= 2501MHz, f
LO
=
2200MHz, P
RF1
= P
RF2
= -5dBm, T
C
= +25°C
Single sideband, no blockers present (Note 9)
Single sideband, no blockers present,
T
C
= -40°C to +85°C (Note 9)
P
RF
= -10dBm
P
RF
= -5dBm
CONDITIONS
MIN
TYP
8.6
0.1
-0.012
7.5
19.8
±0.5
9.6
0.017
65.9
60.9
MAX
UNITS
dB
dB
dB/°C
dBm
dBm
dB
dB
dB/°C
dBc
4
_______________________________________________________________________________________
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical
Application Circuit,
RF and LO ports are driven from 50Ω sources, Typical values are at V
CC
= +3.3V, P
RF
= -5dBm,
P
LO
= 0dBm, f
RF
= 2500MHz, f
LO
= 2200MHz, f
IF
= 300MHz, T
C
= +25°C, unless otherwise noted.) (Note 6)
PARAMETER
3RF-3LO Spur Rejection
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
Z
IF
SYMBOL
3x3
P
RF
= -10dBm
P
RF
= -5dBm
LO on and IF terminated into a matched
impedance
RF and IF terminated into a matched
impedance
Nominal differential impedance at the IC’s
IF outputs
RF terminated into 50Ω,
LO driven by 50Ω source,
IF transformed to 50Ω
using external
components shown in the
Typical Application
Circuit.
See the
IF Port
Return Loss vs. IF
Frequency
graph in the
Typical Operating
Characteristics
for
performance vs. inductor
values.
f
IF
= 450MHz,
L1 = L2 = 120nH
CONDITIONS
MIN
TYP
67.9
57.9
16
16.7
200
MAX
UNITS
dBc
dB
dB
Ω
MAX19996
23
IF Output Return Loss
f
IF
= 350MHz,
L1 = L2 = 270nH
23
dB
f
IF
= 300MHz,
L1 = L2 = 470nH
23
Minimum RF-to-IF Isolation
Maximum LO Leakage at RF Port
Maximum 2LO Leakage at RF Port
Maximum LO Leakage at IF Port
f
RF
= 2300MHz to 2700MHz, P
LO
= +3dBm
f
LO
= 1900MHz to 2500MHz, P
LO
= +3dBm
f
LO
= 1900MHz to 2500MHz, P
LO
= +3dBm
f
LO
= 1900MHz to 2500MHz, P
LO
= +3dBm
33
-26.6
-28.8
-21.9
dB
dBm
dBm
dBm
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
100% production tested for functional performance.
All limits reflect losses of external components, including a 0.8dB loss at f
IF
= 300MHz due to the 4:1 impedance trans-
former. Output measurements were taken at IF outputs of the
Typical Application Circuit.
Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See
the
Typical Operating Characteristics.
Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ω source.
Measured with external LO source noise filtered so that the noise floor is -174dBm/Hz. This specification reflects the
effects of all SNR degradations in the mixer including the LO noise, as defined in Application Note 2021:
Specifications
and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
_______________________________________________________________________________________
5
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