MF0ICU1
MIFARE Ultralight contactless single-ticket IC
Rev. 3.8 — 22 December 2010
028638
Product data sheet
PUBLIC
1. General description
The MIFARE MF0ICU1 has been developed by NXP Semiconductors for use with
Proximity Coupling Devices (PCD) in accordance with ISO/IEC 14443 A (see
Ref. 1).
It is
intended for use with single trip tickets in public transportation networks, loyalty cards or
day passes for events as a replacement for conventional ticketing solutions such as paper
tickets, magnetic stripe tickets or coins.
As the usage of contactless proximity smart cards becomes more and more common,
transport and event operators are switching to completely contactless solutions. The
introduction of the MIFARE Ultralight for limited use tickets will lead to a reduction of
system installation and maintenance costs. Terminals will be less vulnerable to damage
and mechanical failures caused by ticket jams. MF0ICU1 can easily be integrated into
existing schemes and even standard paper ticket vending equipment can be upgraded.
This solution for low cost tickets can help operators to reduce the circulation of cash within
the system.
The mechanical and electronical specifications of MIFARE Ultralight are tailored to meet
the requirements of paper ticket manufacturers.
1.1 Key applications
•
Limited use tickets for public transport
•
Limited use tickets for event ticketing
1.2 Contactless energy and data transfer
MF0ICU1 is connected to a coil with a few turns. The MF0ICU1 fits the TFC.0
(Edmondson) and TFC.1 (ISO) ticket formats as defined in BS EN753-2.
TFC.1 format tickets are supported by the MF0ICU10 chip which features a 17 pF on-chip
resonance capacitor.
The smaller TFC.0 format tickets are supported by the MF0ICU11 chip which features a
50 pF on-chip resonance capacitor.
1.3 Anticollision
An intelligent anticollision function enables simultaneous multicard operation. The
anticollision algorithm individually selects each card and ensures correct execution of a
transaction with the selected card without data corruption from other cards in the field.
NXP Semiconductors
MF0ICU1
MIFARE Ultralight contactless single-ticket IC
directly mounted IC
energy
coil:
20 mm
TFC.0
coil: 56 mm
001aah998
data
MIFARE CARD
PCD
Evaluations show that an operating distance of approximately 8 cm can be achieved with this ticket
configuration (6 turn coil) using a MIFARE demonstration-system.
Fig 1.
MIFARE card reader
1.3.1 Cascaded Unique IDentification (UID)
The anticollision function is based on an IC individual serial number called Unique
Identification (UID) for each IC. The UID of the MF0ICU1 comprises 7 bytes and supports
ISO/IEC 14443-3 cascade level 2.
1.4 Security
•
7-byte UID in accordance with ISO/IEC 14443-3 for each device
•
32-bit user definable One-Time Programmable (OTP) area
•
Field programmable read-only locking function per page
1.5 Delivery options
MF0ICU1 can be delivered in packaged or wafer form. Refer to delivery type description
for more information.
MF0ICU1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.8 — 22 December 2010
028638
2 of 28
NXP Semiconductors
MF0ICU1
MIFARE Ultralight contactless single-ticket IC
2. Features and benefits
2.1 MIFARE RF interface ISO/IEC 14443 A
Contactless transmission of data and supply energy (no battery needed)
Operating distance up to 100 mm depending on antenna geometry
Operating frequency of 13.56 MHz
Data transfer of 106 kBs
Data integrity of 16-bit CRC, parity, bit coding, bit counting
Anticollision
7-byte serial number in accordance with ISO/IEC 14443-3 cascade level 2
Typical ticketing transaction time of < 35 ms
Fast counter transaction time of < 10 ms
2.2 EEPROM
512-bit, organized in 16 pages with 4 bytes per page
Field programmable read-only locking function per page
32-bit user definable One-Time Programmable (OTP) area
384-bit user Read/Write area (12 pages)
Data retention time of 5 years
Write endurance 10000 cycles
3. Ordering information
Table 1.
Ordering information
Package
Commercial
Name
MF0ICU1001W/S7DL
FFC
Name
-
Description
8 inch wafer (sawn; 75 µm thickness, on film
frame carrier; electronic fail die marking
according to SECSII format) see
Section 7
and
Section 8,
17 pF input capacitance
8 inch wafer (sawn; 75 µm thickness, on film
frame carrier; electronic fail die marking
according to SECSII format) see
Section 7
and
Section 8,
50 pF input capacitance
8 inch wafer (sawn; 120 µm thickness, on film
frame carrier; electronic fail die marking
according to SECSII format) see
Section 7
and
Section 8,
17 pF input capacitance
8 inch wafer (sawn; 120 µm thickness, on film
frame carrier; electronic fail die marking
according to SECSII format) see
Section 7
and
Section 8,
50 pF input capacitance
plastic leadless module carrier package; 35 mm
SOT500-2 wide tape, 17 pF input capacitance
Version
-
Type number
MF0ICU1101W/S7DL
FFC
-
-
MF0ICU1001W/U7DL
FFC
-
-
MF0ICU1101W/U7DL
FFC
-
-
MF0MOA4U10/D
MOA4
PLLMC
SOT500-2
MF0ICU1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.8 — 22 December 2010
028638
3 of 28
NXP Semiconductors
MF0ICU1
MIFARE Ultralight contactless single-ticket IC
4. Block diagram
DIGITAL CONTROL UNIT
antenna
RF INTERFACE
ANTICOLLISION
EEPROM
INTERFACE
COMMAND
INTERPRETER
EEPROM
001aal339
Fig 2. Block diagram
5. Pinning information
5.1
Contactless smart card module
LA
top view
LB
001aaj820
Fig 3.
Table 2.
Contact assignments for SOT500-2 (MOA4)
Bonding pad assignments to smart card contactless module
MF0ICU1DA4/01
Description
antenna coil connection LA
antenna coil connection LB
Symbol
LA
LB
Contactless interface module
Antenna contacts
LA
LB
MF0ICU1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.8 — 22 December 2010
028638
4 of 28
NXP Semiconductors
MF0ICU1
MIFARE Ultralight contactless single-ticket IC
6. Mechanical specification
Table 3.
Wafer
diameter
maximum diameter after foil expansion
thickness
flatness
Potential Good Dies per Wafer (PGDW)
Wafer underside
material
flatness
roughness
Chip dimensions
step size
gap between chips
Passivation
type
material
thickness
Au bump (substrate connected to VSS)
material
hardness
shear strength
height
height uniformity
99.9 % pure Au
35 to 80 HV 0.005
>70 MPa
18
μm
within a die =
±2 μm
within a wafer =
±3 μm
wafer to wafer =
±4 μm
flatness
size
size variation
under bump metallization
minimum =
±1.5 μm
LA, LB and VSS = 90
μm ×
90
μm
TESTIO = 60
μm ×
60
μm
±5 μm
sputtered TiW
sandwich structure
PSG/nitride (on top)
500 nm/600 nm
x = 645
μm
y = 665
μm
typical = 20
μm
minimum = 5
μm
Si
not applicable
R
a
max = 0.5
μm
R
t
max = 5
μm
200 mm (8 inches)
210 mm
120
μm ±15 μm
(U7DL types)
75
μm ±15 μm
(S7DL types)
not applicable
72778
Specifications
6.1 Fail die identification
The wafers are not inked.
Electronic wafer mapping (SECS II format) covers the electrical test results and the
additional mechanical/visual inspection results.
MF0ICU1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.8 — 22 December 2010
028638
5 of 28
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