BCR48PN
NPN/PNP Silicon Digital Transistor Array
•
Switching circuit, inverter, interface circuit,
driver circuit
•
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
•
Built in bias resistor
NPN:
R
1
= 47kΩ,
R
2
= 47kΩ
PNP:
R
1
= 2.2kΩ,
R
2
= 47kΩ
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
C1
6
B2
5
E2
4
4
5
6
1
2
3
R
2
Top View
654
W1s
123
Direction of Unreeling
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
R
1
TR1
R
2
1
E1
2
B1
R
1
TR2
3
C2
EHA07176
Position in tape: pin 1
opposite of feed hole side
EHA07193
Type
BCR48PN
Maximum Ratings
Parameter
Marking
WTs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol
V
CEO
V
CBO
NPN
PNP
NPN
PNP
NPN
PNP
V
i(fwd)
V
i(fwd)
V
i(rev)
V
i(rev)
I
C
I
C
P
tot
T
j
T
stg
Value
50
50
80
20
10
5
70
100
250
150
-65...+150
Unit
V
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input forward voltage
Input reverse voltage
Input reverse voltage
DC collector current
DC collector current
Junction temperature
Storage temperature
mA
mW
°C
Total power dissipation,
T
S
= 115 °C
1
2011-07-28
BCR48PN
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
140
K/W
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
DC Characteristics for NPN Type
Collector-emitter breakdown voltage
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
Emitter cutoff current
V
EB
= 10 V,
I
C
= 0
DC current gain 2)
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage2)
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on Voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
R
1
R
1
/R
2
32
0.9
47
1
62
1.1
kΩ
-
V
i(on)
1
-
3
V
i(off)
0.8
-
1.5
V
CEsat
-
-
0.3
V
h
FE
70
-
-
-
I
EBO
-
-
164
µA
I
CBO
-
-
100
nA
V
(BR)CBO
50
-
-
V
(BR)CEO
50
-
-
V
Symbol
min.
Values
typ.
max.
Unit
AC Characteristics for NPN Type
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
f
T
C
cb
-
-
100
3
-
-
MHz
pF
2) Pulse test: t < 300
µ
s; D < 2%
2
2011-07-28
BCR48PN
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
DC Characteristics for PNP Type
Collector-emitter breakdown voltage
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
Emitter cutoff current
V
EB
= 5 V,
I
C
= 0
DC current gain 1)
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics for PNP Type
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
-
3
-
pF
f
T
-
200
-
MHz
R
1
R
1
/R
2
1.5
0.042
2.2
2.9
k
Ω
0.047 0.052 -
V
i(on)
0.5
-
1.1
V
i(off)
0.4
-
0.8
V
CEsat
-
-
0.3
V
h
FE
70
-
-
-
I
EBO
-
-
164
µA
I
CBO
-
-
100
nA
V
(BR)CBO
50
-
-
V
(BR)CEO
50
-
-
V
Symbol
min.
Values
typ.
max.
Unit
1) Pulse test: t < 300
µ
s; D < 2%
3
2011-07-28
BCR48PN
NPN Type
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
10
3
Collector-Emitter Saturation Voltage
V
CEsat
=
f
(I
C
),
h
FE
= 20
0.5
V
0.4
V
CEsat
h
FE
10
2
0.35
0.3
0.25
0.2
10
1
-40 °C
-25 °C
25 °C
85 °C
125 °C
0.15
0.1
0.05
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
0 -4
10
10
-3
10
-2
A
10
-1
0
-3
10
10
-2
A
10
-1
I
C
I
C
Input on Voltage
V
i(on)
=
f
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
2
Input off voltage
V
i(off)
=
f
(I
C
)
V
CE
= 5V (common emitter configuration)
10
1
V
V
i(on)
V
i(off)
10
1
-40 °C
-25 °C
25 °C
85 °C
125 °C
V
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
0
10
0
10
-1 -5
10
10
-4
10
-3
10
-2
A
10
-1
10
-1 -5
10
10
-4
10
-3
10
-2
A
10
-1
I
C
I
C
4
2011-07-28
BCR48PN
PNP Type
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
10
3
Collector-Emitter Saturation Voltage
V
CEsat
=
f
(I
C
),
h
FE
= 20
0.5
V
0.4
V
CEsat
h
FE
10
2
0.35
0.3
0.25
0.2
0.15
0.1
0.05
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
1
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
0 -4
10
10
-3
10
-2
A
10
-1
0
-3
10
10
-2
A
10
-1
I
C
I
C
Input on Voltage
V
i(on)
=
f
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
1
Input off voltage
V
i(off)
=
f
(I
C
)
V
CE
= 5V (common emitter configuration)
10
1
V
V
i(on)
10
0
V
i(off)
-40 °C
-25 °C
25 °C
85 °C
125 °C
V
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
0
10
-1 -5
10
10
-4
10
-3
10
-2
A
10
-1
10
-1 -5
10
10
-4
10
-3
10
-2
A
10
-1
I
C
I
C
5
2011-07-28
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