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5962-9317704VUX

产品描述FIFO, 16KX9, 15ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28
产品类别存储    存储   
文件大小358KB,共19页
制造商Atmel (Microchip)
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5962-9317704VUX概述

FIFO, 16KX9, 15ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28

5962-9317704VUX规格参数

参数名称属性值
Objectid2081044906
包装说明0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28
Reach Compliance Codeunknown
Is SamacsysN
YTEOL0
最长访问时间15 ns
周期时间25 ns
内存密度147456 bit
内存宽度9
组织16KX9
标称供电电压 (Vsup)5 V
JESD-30 代码R-CDIP-T28
认证状态Not Qualified
并行/串行PARALLEL
最大压摆率0.12 mA
最小供电电压 (Vsup)4.5 V
技术CMOS
内存集成电路类型OTHER FIFO
字数16384 words
字数代码16000
工作模式ASYNCHRONOUS
温度等级MILITARY
功能数量1
可输出NO
最大供电电压 (Vsup)5.5 V
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DIP
封装形状RECTANGULAR
表面贴装NO
端子形式THROUGH-HOLE
端子位置DUAL
端子数量28
封装形式IN-LINE
端子节距2.54 mm
最高工作温度125 °C
最低工作温度-55 °C
筛选级别MIL-PRF-38535 Class V
座面最大高度5.84 mm
宽度7.62 mm

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Features
First-in first-out dual port memory
16384 x 9 organization
Fast Flag and access times: 15, 30ns
Wide temperature range: - 55
°C
to + 125
°C
Fully expandable by word width or depth
Asynchronous read/write operations
Empty, full and half flags in single device mode
Retransmit capability
Bi-directional applications
Battery back-up operation: 2V data retention
TTL compatible
Single 5V + 10% power supply
QML Q and V with SMD 5962-93177
Description
The M67206F implements a first-in first-out algorithm, featuring asynchronous
read/write operations. The FULL and EMPTY flags prevent data overflow and under-
flow. The Expansion logic allows unlimited expansion in word size and depth with no
timing penalties. Twin address pointers automatically generate internal read and write
addresses, and no external address information is required. Address pointers are
automatically incremented with the write pin and read pin. The 9 bits wide data are
used in data communications applications where a parity bit for error checking is nec-
essary. The Retransmit pin resets the Read pointer to zero without affecting the write
pointer. This is very useful for retransmitting data when an error is detected in the
system.
Using an array of eight transistors (8 T) memory cell, the M67206F combines an
extremely low standby supply current (typ = 0.1
µA)
with a fast access time at 15 ns
over the full temperature range. All versions offer battery backup data retention capa-
bility with a typical power consumption at less than 2
µW.
The M67206F is processed according to the methods of the latest revision of the MIL
PRF 38535 (Q and V) or ESA SCC 9000.
Rad Tolerant
High Speed
16 K x 9
Parallel FIFO
M67206F
Rev. E–20-Aug-01
1

 
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