BFP620F_E6327
NPN Silicon Germanium RF Transistor
Preliminary data
•
For high gain low noise amplifiers
•
Smallest Package 1.4 x 0.8 x 0.59mm
•
Noise figure
F
= 0.65 dB at 1.8 GHz
outstanding
G
ms
= 21 dB at 1.8 GHz
•
Gold metallization for extra high reliability
TSFP-4
to p v ie w
4
3
3
4
XYs
2
1
A C s
1
2
d ir e c tio n o f u n r e e lin g
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BFP620F_E6327
Maximum Ratings
Parameter
Marking
ACs
1=B
Pin Configuration
2=E
3=C
4=E
Package
TSFP-4
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Value
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
S
≤
98°C
1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
2.3
7.5
1.2
80
3
185
150
-65 ... 150
-65 ... 150
V
mA
mW
°C
Junction - soldering point
2)
R
thJS
≤
280
K/W
1
T
is measured on the emitter lead at the soldering point to the pcb
S
2For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Apr-22-2004
BFP620F_E6327
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 20 mA,
V
CE
= 1.5 V
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 60 mA,
V
CE
= 1.5 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 2 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 5 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
Power gain, maximum stable
1)
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Insertion power gain
I
C
= 20 mA,
V
CE
= 2 V,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
Third order intercept point at output
2)
V
CE
= 2 V,
f
= 1.8 GHz,
Z
S
=Z
L
=50
Ω
,
I
C
= 20 mA
1dB compression point at output
3)
V
CE
= 2 V,
f
= 1.8 GHz,
Z
S
=Z
L
=50
Ω
,
I
C
= 20 mA
1
G
= |
S
/
S
|
ms
21
12
2IP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50
Ω
from 0.1MHz to 6GHz
3DC current at no input power
Unit
max.
-
200
10
250
V
nA
µA
-
typ.
2.8
-
-
180
V
(BR)CEO
I
CBO
I
EBO
h
FE
2.3
-
-
100
f
T
C
cb
C
ce
C
eb
F
-
-
-
-
-
65
0.12
0.2
0.45
0.7
-
0.2
-
-
-
GHz
pF
dB
G
ms
-
21.5
-
|S
21
|
2
-
19
-
dB
IP
3
-
24.5
-
dBm
P
-1dB
-
11.5
-
2
Apr-22-2004
BFP620F_E6327
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
354
1000
3.355
1.2
2.179
2.506
371.6
1.306
2.444
0.739
0.3884
0.5
3.43
aA
V
-
V
-
Ω
fF
ps
A
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
557.1
2.262
100
6.31
2.674
0.472
0.898
2.71
0
0.3926
60
-0.9
0.821
-
A
-
mA
Ω
V
-
deg
-
fF
-
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.021
2.978
1
19.23
18
2.105
0.315
0.492
225.6
1
0.5
1.114
298
-
pA
-
fA
µA
Ω
-
V
fF
-
V
eV
K
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
L
BO
=
L
EO
=
L
CO
=
0.22
0.28
0.22
nH
L
BI
=
nH
R
LBI
=
nH
L
EI
=
R
LEI
=
-
-
-
fF
fF
fF
L
CI
=
R
LCI
=
K
CI-EI
=
K
BI-CI
=
K
BI-EI
=
0.42
0.15
0.26
0.11
0.35
0.13
-0.05
-0.08
0.20
nH
Ω
nH
Ω
nH
Ω
-
-
-
K
BO-EO
= 0.10
K
BO-CO
= 0.01
K
EO-CO
= 0.11
C
BE
=
C
BC
=
C
CE
=
34
2
33
Valid up to 6GHz
The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection.
R
LxI are series resistors for the inductances
L
xI and
K
xa-yb are the coupling coefficients between
the inductances
L
xa and
L
yb. The referencepins for the coupled ports are B, E, C, B`, E`, C`.
For examples and ready to use parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
3
Apr-22-2004
Package TSFP-4
Package Outline
1.4
±0.05
0.2
+0.1
-0.05
4
3
1.2
+0.1
-0.05
0.1 MIN.
0.55
±0.04
A
10˚ MAX.
0.8
±0.05
0.2
+0.1
-0.05
1
2
0.15
±0.05
0.5 0.5
0.1
M
A
0.1
M
4x
Foot Print
0.9
0.5 0.5
0.45
Marking Layout
Manufacturer
Pin 1
Type code
0.35
BFP420F
Example
Packing
Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
1.4
8
Pin 1
1.55
0.7
Impressum
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
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