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JANTX2N6987: 产品描述Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14; 产品类别分立半导体晶体管; 文件大小212KB，共2页; 制造商Semicoa; 官网地址http://www.snscorp.com/Semicoa.htm; 标准

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JANTX2N6987概述

Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14

JANTX2N6987规格参数

参数名称	属性值
是否Rohs认证	符合
零件包装代码	DIP
包装说明	IN-LINE, R-GDIP-T14
针数	14
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	0.6 A
集电极-发射极最大电压	60 V
配置	SEPARATE, 4 ELEMENTS
最小直流电流增益 (hFE)	50
JESD-30 代码	R-GDIP-T14
元件数量	4
端子数量	14
最高工作温度	200 °C
最低工作温度	-65 °C
封装主体材料	CERAMIC, GLASS-SEALED
封装形状	RECTANGULAR
封装形式	IN-LINE
极性/信道类型	PNP
认证状态	Qualified
参考标准	MIL-PRF-19500/558
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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2N6987

Silicon PNP Transistor

Data Sheet

Description

Complement to the 2N6989

Semicoa Semiconductors offers:

•

Screening and processing per MIL-PRF-19500

Appendix E

•

JAN level (2N6987J)

•

JANTX level (2N6987JX)

•

JANTXV level (2N6987JV)

•

JANS level (2N6987JS)

•

QCI to the applicable level

•

100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

•

Radiation testing (total dose) upon request

Applications

•

General purpose switching

•

4 Transistor Array

•

PNP silicon transistor

Features

•

Hermetically sealed Cerdip ceramic

Also available in chip configuration

Chip geometry 0600

Reference document:

MIL-PRF-19500/558

Benefits

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

•

Qualification Levels: JAN, JANTX,

JANTXV and JANS

•

Radiation testing available

Absolute Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Power Dissipation, T

= 25

Derate linearly above 25

Operating Junction Temperature

Storage Temperature

Symbol

CEO

CBO

EBO

STG

= 25°C unless otherwise specified

Rating

600

1.5

8.57

-65 to +200

Unit

Volts

mW/°C

°C

Rev. D

Semicoa Semiconductors, Inc.

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 1 of 2

www.SEMICOA.com

JANTX2N6987相似产品对比

	JANTX2N6987	JANTXV2N6987	JAN2N6987	JANS2N6987
描述	Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14	Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14	Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14	Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14
零件包装代码	DIP	DIP	DIP	DIP
包装说明	IN-LINE, R-GDIP-T14	IN-LINE, R-GDIP-T14	IN-LINE, R-GDIP-T14	IN-LINE, R-GDIP-T14
针数	14	14	14	14
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.6 A	0.6 A	0.6 A	0.6 A
集电极-发射极最大电压	60 V	60 V	60 V	60 V
配置	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS
最小直流电流增益 (hFE)	50	50	50	50
JESD-30 代码	R-GDIP-T14	R-GDIP-T14	R-GDIP-T14	R-GDIP-T14
元件数量	4	4	4	4
端子数量	14	14	14	14
最高工作温度	200 °C	200 °C	200 °C	200 °C
封装主体材料	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE
极性/信道类型	PNP	PNP	PNP	PNP
认证状态	Qualified	Qualified	Qualified	Qualified
参考标准	MIL-PRF-19500/558	MIL-PRF-19500/558	MIL-PRF-19500/558	MIL-PRF-19500/558
表面贴装	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
是否Rohs认证	符合	符合	符合	-

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