The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 10 September 1997
INCH-POUND
MIL-PRF-19500/486E
10 June 1997
SUPERSEDING
MIL-S-19500/486D
27 June 1995
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, COUPLER, OPTOELECTRIC, SOLID STATE;
TYPES 4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A, 4N22U, 4N22AU,
4N23U, 4N23AU, 4N24U, 4N24AU; JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for solid state optically coupled isolators in which a gallium
arsenide or gallium aluminum arsenide diode light source is optically coupled to a silicon NPN phototransistor. Four levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 and 2.
1.3 Maximum ratings. Unless otherwise specified, maximum ratings apply to all case outlines and TA = +25°C.
1.3.1 Infrared-emitting diode maximum ratings.
VR
IF 1/
IP 2/
V dc
mA dc
A (pk)
2
40
1
1/ Derate linearly to +125°C at 0.67 mA/°C above +65°C.
2/ 1.0
µs
pulse width, 300 pps.
1.3.2 Phototransistor maximum ratings.
VCEO
VCBO
VEBO
PT 1/
IC
V dc
V dc
V dc
mW
mA dc
35
35
4
300
50
1/ Derate linearly to +125°C at 3 mA/°C above +25°C.
1.3.1 Total device ratings.
TJ and TSTG
°C
-65 to +125
VIO
V dc
1,000 max
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or
by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5980
MIL-PRF-19500/486E
1.4 Primary electrical characteristics. Unless otherwise specified, electrical characteristics apply to all case outlines and T A = +25°C.
1.4.1 LED (input) characteristics.
Limits
IR
VR = 2 V dc
VF
IF = 10 mA dc
A dc
Min
Max
V dc
0.8
1.3
100
1.4.2 Phototransistor (output) characteristics.
Limits
IC(OFF)
VCE = 20 V dc
V(BR)CEO
IC = 1 mA dc
V(BR)CBO
IC = 100
µA
dc
V(BR)CBO
IE = 100
µA
dc
hFE
VCE = 20 V dc
IC = 10 mA dc
4N22
4N22A
4N23
4N23A
4N24
4N24A
nA
Min
Max
V dc
35
V dc
35
V dc
4
200
300
400
100
1.4.2 Coupled (transfer) characteristics.
CIO
V=0
f = 1 MHz
see 4.5.4
Phototransistor mode switching ( see figure 3)
IC = 100
µA
dc
4N22
tr
ohms
Min
Max
1011
5
15
15
15
15
20
20
pF
µs
4N22A
tf
µs
4N23
tr
µs
4N23A
tf
µs
4N24
tr
µs
4N24A
tf
µs
Limits
RIO
at 1,000 V dc
see 4.5.4
VCE(SAT)
IF = 20 mA
Limits
IC = 2.5 mA
4N22
4N22A
V dc
Min
Max
IC = 5 mA
4N23
4N23A
V dc
C = 10 mA
4N24
4N24A
V dc
4N22
4N22A
mA dc
2.5
0.3
0.3
0.3
IC(ON)2
IF = 10 mA
VCE = 5 V dc
IC(ON)1
IF = 2 mA
VCE = 5 V dc
4N23
4N23A
mA dc
6.0
4N24
4N24A
mA dc
10.0
4N22
4N22A
mA dc
0 15
4N23
4N23A
mA dc
0.2
4N24
4N24A
mA dc
0.4
2
MIL-PRF-19500/486E
Dimensions
Ltr
Inches
Min
HD
CD
LD
α
Q
CH
LC
LC
1
.335
.305
.016
Max
.370
.335
0.19
Millimeters
Min
8.51
7.75
0.41
Max
9.40
8.51
0.48
5
5
5
3
Notes
45° T.P.
---
.155
.040
.185
45° T.P.
---
3.94
1.02
4.70
.200 T.P.
.100 T.P.
5.08 T.P.
2.54 T. P.
3
3
TW
TL
LL
.028
.029
.500
.034
.045
.600
0.71
0.74
12.70
0.86
1.14
15.24
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. T.P. designates true position. Leads having maximum diameter .019 inches (0.48 mm) measured in gauging plane .054 +
.001, -.000 inch (1.37 +0.03, -0.00 mm) below the seating plane of the device shall be within .007 inch (0.18 mm) of their
true position relative to a maximum width tab.
4. 4N22A, 4N23A, and 4N24A have collector isolated from the case.
5. In accordance with ANSI Y14.5M, diameters are equivalent to
∅x
symbology.
FIGURE 1. Physical dimensions and configurations - Continued.
4
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