Ordering number : EN6481D
TND017MP / SW
SANYO Semiconductors
DATA SHEET
TND017MP
TND017SW
Features
•
•
•
•
•
ExPD(Excellent Power Device)
Lowside Power Switch Lamp-, Solenoid-,
and Motor-Driving Applications
N-channel MOSFET built in.
Overheat protection.
Overcurrent protection (Self recovery type current limiting function).
Overvoltage protection.
TND017SW incorporates two sets of circuit.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Output Current
Input Voltage
Allowable Power Dissipation
Operating Supply Voltage
Operating Temperature
Junction Temperature
Storage Temperature
Symbol
VDS
IO(DC)
VIN
TND017MP
PD
VDS(opr)
Topr
Tj
Tstg
TND017SW Mounted on a ceramic board (1200mm
✕0.8mm)
1unit
2
Conditions
Ratings
60
1.5
--0.3 to +10
1.0
1.7
2.0
40
--40 to +85
Internally Limited
--55 to +150
2
Unit
V
A
V
W
W
W
V
°C
°C
°C
TND017SW Mounted on a ceramic board (1200mm
✕0.8mm)
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2407 TI IM TC-00000975 / 90507 TI IM TC-00000883 / 72606IP MS IM / 12501TS TA-3183 / 42000TS (KOTO) TA-2832 No.6481-1/6
TND017MP / SW
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Clamp Voltage
Output-OFF Current
Input Threshold Voltage
Protection Circuit Operating Input Voltage
Drain-to-Source ON Resistance
Input Current (Output On)
Overheat Detecting Temperature
Overcurrent Detecting Current
Overcurrent Limit (Peak)
Input Clamp Voltage
Symbol
VDS, clamp
IDSS1
IDSS2
VIN(th)
VIN(opr)
RDS(on)
IIN
Tj(sd)
Is
ILMT
VIN, clamp
Conditions
VIN=0V, IO=1mA
VIN=0V, VDS=50V
VIN=0V, VDS=12V
VDS=5V, IO=1mA
VIN=5V, IO=1A
VIN=5V
VIN=5V, IO=1A
VIN=5V
VIN=5V
IIN=1mA
120
3.0
3.5
10
Ratings
min
60
10
5
1.0
4
0.3
0.25
150
4.0
4.5
1.5
2.0
10
0.4
0.6
190
5.0
5.5
typ
max
Unit
V
µ
A
µ
A
V
V
Ω
mA
°C
A
A
V
Notes : 1. Overcurrent protection circuit limits the output current to the range of overcurrent limit value.
2. During overheat protecting operation, output current is once turned off and then recovers after the input voltage falls to the reset voltage (1.0V)
or below.
Package Dimensions
unit : mm (typ)
7520-003 [TND017MP]
6.0
5.0
4.7
Package Dimensions
unit : mm (typ)
7005-005 [TND017SW]
8
5
0.3
8.5
4.4
1.0
0.5
0.6
0.5
3.0
6.0
0.5
14.0
1
4
0.43
1.5
1.8 MAX
0.2
5.0
1 2 3
1 : GND
2 : OUT
3 : IN
1.45
1 : GND1
2 : IN1
3 : GND2
4 : IN2
5 : OUT2
6 : OUT2
7 : OUT1
8 : OUT1
SANYO : SOP8
0.595
1.27
1.45
SANYO : MP
Block Diagram
OUT(D)
Overcurrent
protective
circuit
IN
Output current
control
ESD
protective
circuit
Overheat
protective
circuit
Overvoltage
protective circuit
Gate
shutdown
circuit
Latch
GND(S)
0.1
No.6481-2/6
TND017MP / SW
0.5
RDS(on) -- Ta
IO=1A
0.6
RDS(on) -- VIN
IO=1A
0.4
0.5
5V
=4V
VIN
Drain-to-Source
ON Resistance, RDS(on) --
Ω
Drain-to-Source
ON Resistance, RDS(on) --
Ω
0.4
Ta=85°C
25
°
C
0.3
6V
0.3
0.2
--40°C
0.2
0.1
0.1
0
--50
0
--25
0
25
50
75
100
IT02011
1.0
2
3
4
5
6
7
8
9
10
IT02012
Ambient Temperature, Ta --
°C
0.6
IIN -- Ta
VIN=5V
Input Voltage, VIN -- V
IIN -- VIN
Ta=25°C
0.9
0.8
0.5
Input Current, IIN -- mA
Input Current, IIN -- mA
0.4
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.3
p
Protection o
eration
0.2
Normal ope
ration
0.1
0
--50
0
--25
0
25
50
75
100
IT02013
5
0
1
2
3
4
5
6
7
8
9
10
Ambient Temperature, Ta --
°C
6.0
IS -- Ta
Overcurrent Detecting Current, IS -- A
Input Voltage, VIN -- V
IT02014
IS -- VIN
Ta=25°C
Overcurrent Detecting Current, IS -- A
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
--50
4
VIN=6V
3
5V
4V
2
1
--25
0
25
50
75
100
IT02015
0
4.0
4.5
5.0
5.5
6.0
IT02016
Ambient Temperature, Ta --
°C
7
ILMT -- Ta
VIN=5V
Input Voltage, VIN -- V
7
ILMT -- VIN
Ta=25°C
6
6
Overcurrent Limit, ILMT -- A
5
Overcurrent Limit, ILMT -- A
--25
0
25
50
75
100
IT02017
5
4
4
3
3
2
2
1
0
--50
1
0
4.0
4.5
5.0
5.5
6.0
IT02018
Ambient Temperature, Ta --
°C
Input Voltage, VIN -- V
No.6481-3/6
TND017MP / SW
Drain-to-Source Clamp Voltage, VDS, Clamp -- V
70
69
68
67
66
65
64
63
62
61
60
--50
--25
0
25
50
75
100
IT02019
2.0
VDS, clamp -- Ta
Input Clamp Voltage, VIN, Clamp -- V
VIN=0V
IO=1mA
12.5
VIN, clamp -- Ta
IIN=1mA
12.0
11.5
11.0
10.5
10.0
--50
--25
0
25
50
75
100
IT02020
Ambient Temperature, Ta --
°C
2.5
Ambient Temperature, Ta --
°
C
VIN(th) -- Ta
VDS=5V
IO=1mA
IO -- VIN
VDS=24V
Threshold Voltage, VIN(th) -- V
2.0
1.5
Output Current, IO -- A
1.5
1.0
1.0
0.5
0
--50
--25
0
25
50
75
100
IT02021
0
0.5
1.0
1.5
2.0
--40
°
C
2.5
0.5
Ta=
85
°
C
25
°
C
3.0
3.5
IT02022
Ambient Temperature, Ta --
°C
Overheat Detecting Temperature, Tj(sd) --
°C
200
Tj(sd) -- VIN
Allowable Power Dissipation, PD -- W
Input Voltage, VIN -- V
1.2
PD -- Ta
TND017MP
180
1.0
160
0.8
140
0.6
120
0.4
100
0.2
80
4.0
4.5
5.0
5.5
6.0
IT02023
0
--40
--20
0
20
40
60
80
100
IT02024
Allowable Power Dissipation, PD(Circuit2) -- W
2.0
1.8
PD(Circuit2) -- PD(Circuit1)
TND017SW
Input Voltage, VIN -- V
Ambient Temperature, Ta --
°
C
2.5
PD -- Ta
TND017SW
M
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
ou
nte
Allowable Power Dissipation, PD -- W
2.0
do
na
ce
ra
1.7
1.5
To
tal
Di
mi
c
ssi
pa
bo
tio
ard
(1
20
1u
nit
1.0
n
0m
m
2
✕
0
.8m
m)
0.5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
--40
Mounted on a ceramic board (1200mm
2
✕0.8mm)
--20
0
20
40
60
80
100
IT02026
Allowable Power Dissipation, PD(Circuit1) -- W
IT02025
Ambient Temperature, Ta --
°
C
No.6481-4/6
TND017MP / SW
Sample Application Circuit
AC24V
AC100V
Lamp
Lamp
Lamp
OUT
TND017MP / SW
GND
IN
Micro-
controller
5V 5V
Micro-
controller
OUT 1
IN 1
TND017SW
OUT 2
IN 2
5V
Micro-
controller
GND 1, 2
Another Sample Application Circuit (Solenoid drive)
AC24V
AC100V
Solenoid
OUT
TND017MP / SW
GND
IN
5V 5V Micro-
Micro-
controller
controller
IN 1
OUT 1
Solenoid
OUT 2
IN 2
5V
Micro-
controller
TND017SW
GND 1, 2
Operation Description
•
The output power MOSFET will be turned on when the input voltage exceeds the input threshold voltage (4 to 6V
is recommended), and then the lamp will be turned on by the current flowing to the lamp. Conversely, the output
power MOSFET will be turned off when the input voltage goes below the input threshold voltage, and the lamp
will be turned off.
•
The inrush current that occurs during normal lamp operation is limited to a preset value by the built-in overcurrent
protecting circuit, which makes the lamp life longer.
•
The internal overcurrent protection function limits the current of output power MOSFET when output current of at
least the overcurrent detecting current value flows at load short. Besides, if the device temperature exceeds the
allowable power dissipation, overheat protection function protects the power switch from being broken down by
shutting down the MOSFET when Tj comes to 150°C (typical).
•
Shutdown state will be kept after overheat protection operation and the system will be reset when the input
voltage goes to or below the reset voltage (1V).
•
As an example of application circuit, DC voltage can also be controlled as a solenoid drive.
Addition
•
The diode between OUT and GND in the block diagram is parasitic diode of the MOSFET.
•
Not apply a voltage on IN terminal during the period when OUT voltage is lower then GND voltage when driving
a solenoid or a motor.
•
Be sure connect a diode between OUT terminal and GND terminal when you want to apply a voltage on IN
terminal under the above-stated state (that is, OUT Voltage < GND Voltage).
No.6481-5/6
嵌入式系统
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