Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
| 参数名称 | 属性值 |
| 厂商名称 | Microsemi |
| 包装说明 | FLANGE MOUNT, R-PSFM-T2 |
| Reach Compliance Code | compliant |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 400 V |
| 最大漏极电流 (ID) | 3.3 A |
| 最大漏源导通电阻 | 1.8 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220 |
| JESD-30 代码 | R-PSFM-T2 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| IRF720 | MSAFR12N50AE3 | MSAER12N50AE3 | MSAFZ15N40A | MSAEZ15N40A | MSAFX11N80A | MSAFX24N50AE3 | |
|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Small Signal Field-Effect Transistor | Small Signal Field-Effect Transistor | Small Signal Field-Effect Transistor | Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, |
| 包装说明 | FLANGE MOUNT, R-PSFM-T2 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 |
| Reach Compliance Code | compliant | compli | compli | unknown | unknown | unknown | compliant |
| 最大漏源导通电阻 | 1.8 Ω | 0.4 Ω | 0.4 Ω | 0.3 Ω | 0.3 Ω | 0.95 Ω | 0.23 Ω |
| JESD-30 代码 | R-PSFM-T2 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 |
| 端子数量 | 2 | 3 | 3 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 表面贴装 | NO | YES | YES | YES | YES | YES | YES |
| 端子形式 | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | SINGLE | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 配置 | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | - | - | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 400 V | 500 V | 500 V | - | - | - | 500 V |
| 最大漏极电流 (ID) | 3.3 A | 12 A | 12 A | - | - | - | 24 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | - | - | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e0 | - | - | e0 | e0 | e0 | - |
| 元件数量 | 1 | 1 | 1 | - | - | - | 1 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | - | - | ENHANCEMENT MODE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | - | - | N-CHANNEL |
| 认证状态 | Not Qualified | - | - | Not Qualified | Not Qualified | Not Qualified | - |
| 端子面层 | TIN LEAD | - | - | TIN LEAD | TIN LEAD | TIN LEAD | - |
| 晶体管元件材料 | SILICON | SILICON | SILICON | - | - | - | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | - |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
