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Datasheet

Datasheet> 器件分类 > 分立半导体> 晶体管> MSAFX24N50AE3

MSAFX24N50AE3: 产品描述Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; 产品类别分立半导体晶体管; 文件大小78KB，共1页; 制造商Microsemi; 官网地址https://www.microsemi.com

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MSAFX24N50AE3概述

Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

MSAFX24N50AE3规格参数

参数名称	属性值
厂商名称	Microsemi
包装说明	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compliant
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	500 V
最大漏极电流 (ID)	24 A
最大漏源导通电阻	0.23 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-CBCC-N3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	96 A
表面贴装	YES
端子形式	NO LEAD
端子位置	BOTTOM
晶体管应用	SWITCHING
晶体管元件材料	SILICON

MSAFX24N50AE3相似产品对比

	MSAFX24N50AE3	MSAFR12N50AE3	MSAER12N50AE3	IRF720	MSAFZ15N40A	MSAEZ15N40A	MSAFX11N80A
描述	Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220	Small Signal Field-Effect Transistor	Small Signal Field-Effect Transistor	Small Signal Field-Effect Transistor
包装说明	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	FLANGE MOUNT, R-PSFM-T2	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compliant	compli	compli	compliant	unknown	unknown	unknown
最大漏源导通电阻	0.23 Ω	0.4 Ω	0.4 Ω	1.8 Ω	0.3 Ω	0.3 Ω	0.95 Ω
JESD-30 代码	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-PSFM-T2	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3
端子数量	3	3	3	2	3	3	3
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	FLANGE MOUNT	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
表面贴装	YES	YES	YES	NO	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD	THROUGH-HOLE	NO LEAD	NO LEAD	NO LEAD
端子位置	BOTTOM	BOTTOM	BOTTOM	SINGLE	BOTTOM	BOTTOM	BOTTOM
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE	-	-	-
最小漏源击穿电压	500 V	500 V	500 V	400 V	-	-	-
最大漏极电流 (ID)	24 A	12 A	12 A	3.3 A	-	-	-
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	-	-
元件数量	1	1	1	1	-	-	-
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	-	-
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	-	-
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	-	-	-
Base Number Matches	-	1	1	1	1	1	1
JESD-609代码	-	-	-	e0	e0	e0	e0
认证状态	-	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
端子面层	-	-	-	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD

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