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CAT28F512LI-90

产品描述IC 64K X 8 FLASH 12V PROM, 90 ns, PDIP32, LEAD FREE AND HALOGEN FREE, PLASTIC, DIP-32, Programmable ROM
产品类别存储    存储   
文件大小96KB,共16页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 选型对比 全文预览

CAT28F512LI-90概述

IC 64K X 8 FLASH 12V PROM, 90 ns, PDIP32, LEAD FREE AND HALOGEN FREE, PLASTIC, DIP-32, Programmable ROM

CAT28F512LI-90规格参数

参数名称属性值
厂商名称ON Semiconductor(安森美)
零件包装代码DIP
包装说明DIP,
针数32
Reach Compliance Codeunknown
最长访问时间90 ns
JESD-30 代码R-PDIP-T32
JESD-609代码e3
长度42.03 mm
内存密度524288 bit
内存集成电路类型FLASH
内存宽度8
功能数量1
端子数量32
字数65536 words
字数代码64000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织64KX8
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
编程电压12 V
认证状态Not Qualified
座面最大高度5.08 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级INDUSTRIAL
端子面层MATTE TIN
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度15.24 mm
Base Number Matches1

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CAT28F512
512K-Bit CMOS Flash Memory
FEATURES
s
Fast Read Access Time: 90/120/150 ns
s
Low Power CMOS Dissipation:
Licensed Intel
second source
s
Commercial, Industrial and Automotive
Temperature Ranges
s
Stop Timer for Program/Erase
s
On-Chip Address and Data Latches
s
JEDEC Standard Pinouts:
–Active: 30 mA max (CMOS/TTL levels)
–Standby: 1 mA max (TTL levels)
–Standby: 100
µ
A max (CMOS levels)
s
High Speed Programming:
–10
µ
s per byte
–1 Sec Typ Chip Program
s
12.0V
±
5% Programming and Erase Voltage
–32-pin DIP
–32-pin PLCC
–32-pin TSOP ( 8 x 20)
s
100,000 Program/Erase Cycles
s
10 Year Data Retention
s
"Green" Package Options Available
s
Electronic Signature
DESCRIPTION
The CAT28F512 is a high speed 64K x 8-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and EEPROM devices. Programming and Erase
are performed through an operation and verify algo-
rithm. The instructions are input via the I/O bus, using a
two write cycle scheme. Address and Data are latched
to free the I/O bus and address bus during the write
operation.
The CAT28F512 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin
TSOP packages.
BLOCK DIAGRAM
I/O0–I/O7
I/O BUFFERS
ERASE VOLTAGE
SWITCH
WE
COMMAND
REGISTER
PROGRAM VOLTAGE
SWITCH
CE, OE LOGIC
DATA
LATCH
SENSE
AMP
CE
OE
ADDRESS LATCH
Y-GATING
Y-DECODER
524,288 BIT
MEMORY
ARRAY
A0–A15
X-DECODER
VOLTAGE VERIFY
SWITCH
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
1
Doc. No. MD-1084, Rev. K

CAT28F512LI-90相似产品对比

CAT28F512LI-90 CAT28F512HI-90 CAT28F512HRI-12 CAT28F512LI-12 HMTMS-132-57-G-D-002-001 CAT28F512HI-12 CAT28F512GI-12 CAT28F512LI-15
描述 IC 64K X 8 FLASH 12V PROM, 90 ns, PDIP32, LEAD FREE AND HALOGEN FREE, PLASTIC, DIP-32, Programmable ROM 64KX8 FLASH 12V PROM, 90ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32 64KX8 FLASH 12V PROM, 120ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, REVERSE, TSOP-32 64KX8 FLASH 12V PROM, 120ns, PDIP32, LEAD FREE AND HALOGEN FREE, PLASTIC, DIP-32 Board Connector, 64 Contact(s), 2 Row(s), Male, Straight, 0.05 inch Pitch, Solder Terminal, Locking, Black Insulator 64KX8 FLASH 12V PROM, 120ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32 64KX8 FLASH 12V PROM, 120ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32 IC 64K X 8 FLASH 12V PROM, 150 ns, PDIP32, LEAD FREE AND HALOGEN FREE, PLASTIC, DIP-32, Programmable ROM
Reach Compliance Code unknown compli compliant unknown compliant unknown compliant unknown
JESD-609代码 e3 e3 e3 e3 e4 e3 e3 e3
最高工作温度 85 °C 85 °C 85 °C 85 °C 125 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -55 °C -40 °C -40 °C -40 °C
端子节距 2.54 mm 0.5 mm 0.5 mm 2.54 mm 1.27 mm 0.5 mm 1.27 mm 2.54 mm
厂商名称 ON Semiconductor(安森美) - - ON Semiconductor(安森美) - ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 DIP TSOP TSOP DIP - TSOP QFJ DIP
包装说明 DIP, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32 TSOP1-R, TSSOP32,.8,20 DIP, - TSOP1, TSSOP32,.8,20 QCCJ, LDCC32,.5X.6 DIP,
针数 32 32 32 32 - 32 32 32
最长访问时间 90 ns 90 ns 120 ns 120 ns - 120 ns 120 ns 150 ns
JESD-30 代码 R-PDIP-T32 R-PDSO-G32 R-PDSO-G32 R-PDIP-T32 - R-PDSO-G32 R-PQCC-J32 R-PDIP-T32
长度 42.03 mm 18.4 mm 18.4 mm 42.03 mm - 18.4 mm 13.97 mm 42.03 mm
内存密度 524288 bit 524288 bi 524288 bit 524288 bit - 524288 bit 524288 bit 524288 bit
内存集成电路类型 FLASH FLASH FLASH FLASH - FLASH FLASH FLASH
内存宽度 8 8 8 8 - 8 8 8
功能数量 1 1 1 1 - 1 1 1
端子数量 32 32 32 32 - 32 32 32
字数 65536 words 65536 words 65536 words 65536 words - 65536 words 65536 words 65536 words
字数代码 64000 64000 64000 64000 - 64000 64000 64000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
组织 64KX8 64KX8 64KX8 64KX8 - 64KX8 64KX8 64KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP TSOP1 TSOP1-R DIP - TSOP1 QCCJ DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE IN-LINE - SMALL OUTLINE, THIN PROFILE CHIP CARRIER IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL - PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 260 - 260 260 260
编程电压 12 V 12 V 12 V 12 V - 12 V 12 V 12 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
座面最大高度 5.08 mm 1.2 mm 1.2 mm 5.08 mm - 1.2 mm 3.55 mm 5.08 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V - 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V - 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V - 5 V 5 V 5 V
表面贴装 NO YES YES NO - YES YES NO
技术 CMOS CMOS CMOS CMOS - CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL - INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN - MATTE TIN MATTE TIN MATTE TIN
端子形式 THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE - GULL WING J BEND THROUGH-HOLE
端子位置 DUAL DUAL DUAL DUAL - DUAL QUAD DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED 40 40 NOT SPECIFIED - NOT SPECIFIED 40 NOT SPECIFIED
宽度 15.24 mm 8 mm 8 mm 15.24 mm - 8 mm 11.43 mm 15.24 mm
Base Number Matches 1 1 1 1 - 1 1 -
是否Rohs认证 - 符合 符合 - 符合 符合 符合 -
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