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CAT28F512HRI-12

产品描述64KX8 FLASH 12V PROM, 120ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, REVERSE, TSOP-32
产品类别存储    存储   
文件大小96KB,共16页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
下载文档 详细参数 选型对比 全文预览

CAT28F512HRI-12概述

64KX8 FLASH 12V PROM, 120ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, REVERSE, TSOP-32

CAT28F512HRI-12规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码TSOP
包装说明TSOP1-R, TSSOP32,.8,20
针数32
Reach Compliance Codecompliant
最长访问时间120 ns
命令用户界面YES
数据轮询NO
耐久性100000 Write/Erase Cycles
JESD-30 代码R-PDSO-G32
JESD-609代码e3
长度18.4 mm
内存密度524288 bit
内存集成电路类型FLASH
内存宽度8
湿度敏感等级2a
功能数量1
端子数量32
字数65536 words
字数代码64000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织64KX8
封装主体材料PLASTIC/EPOXY
封装代码TSOP1-R
封装等效代码TSSOP32,.8,20
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源5 V
编程电压12 V
认证状态Not Qualified
反向引出线YES
座面最大高度1.2 mm
最大待机电流0.00001 A
最大压摆率0.03 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层MATTE TIN
端子形式GULL WING
端子节距0.5 mm
端子位置DUAL
处于峰值回流温度下的最长时间40
切换位NO
类型NOR TYPE
宽度8 mm
Base Number Matches1

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CAT28F512
512K-Bit CMOS Flash Memory
FEATURES
s
Fast Read Access Time: 90/120/150 ns
s
Low Power CMOS Dissipation:
Licensed Intel
second source
s
Commercial, Industrial and Automotive
Temperature Ranges
s
Stop Timer for Program/Erase
s
On-Chip Address and Data Latches
s
JEDEC Standard Pinouts:
–Active: 30 mA max (CMOS/TTL levels)
–Standby: 1 mA max (TTL levels)
–Standby: 100
µ
A max (CMOS levels)
s
High Speed Programming:
–10
µ
s per byte
–1 Sec Typ Chip Program
s
12.0V
±
5% Programming and Erase Voltage
–32-pin DIP
–32-pin PLCC
–32-pin TSOP ( 8 x 20)
s
100,000 Program/Erase Cycles
s
10 Year Data Retention
s
"Green" Package Options Available
s
Electronic Signature
DESCRIPTION
The CAT28F512 is a high speed 64K x 8-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and EEPROM devices. Programming and Erase
are performed through an operation and verify algo-
rithm. The instructions are input via the I/O bus, using a
two write cycle scheme. Address and Data are latched
to free the I/O bus and address bus during the write
operation.
The CAT28F512 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin
TSOP packages.
BLOCK DIAGRAM
I/O0–I/O7
I/O BUFFERS
ERASE VOLTAGE
SWITCH
WE
COMMAND
REGISTER
PROGRAM VOLTAGE
SWITCH
CE, OE LOGIC
DATA
LATCH
SENSE
AMP
CE
OE
ADDRESS LATCH
Y-GATING
Y-DECODER
524,288 BIT
MEMORY
ARRAY
A0–A15
X-DECODER
VOLTAGE VERIFY
SWITCH
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
1
Doc. No. MD-1084, Rev. K

CAT28F512HRI-12相似产品对比

CAT28F512HRI-12 CAT28F512HI-90 CAT28F512LI-90 CAT28F512LI-12 HMTMS-132-57-G-D-002-001 CAT28F512HI-12 CAT28F512GI-12 CAT28F512LI-15
描述 64KX8 FLASH 12V PROM, 120ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, REVERSE, TSOP-32 64KX8 FLASH 12V PROM, 90ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32 IC 64K X 8 FLASH 12V PROM, 90 ns, PDIP32, LEAD FREE AND HALOGEN FREE, PLASTIC, DIP-32, Programmable ROM 64KX8 FLASH 12V PROM, 120ns, PDIP32, LEAD FREE AND HALOGEN FREE, PLASTIC, DIP-32 Board Connector, 64 Contact(s), 2 Row(s), Male, Straight, 0.05 inch Pitch, Solder Terminal, Locking, Black Insulator 64KX8 FLASH 12V PROM, 120ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32 64KX8 FLASH 12V PROM, 120ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32 IC 64K X 8 FLASH 12V PROM, 150 ns, PDIP32, LEAD FREE AND HALOGEN FREE, PLASTIC, DIP-32, Programmable ROM
Reach Compliance Code compliant compli unknown unknown compliant unknown compliant unknown
JESD-609代码 e3 e3 e3 e3 e4 e3 e3 e3
最高工作温度 85 °C 85 °C 85 °C 85 °C 125 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -55 °C -40 °C -40 °C -40 °C
端子节距 0.5 mm 0.5 mm 2.54 mm 2.54 mm 1.27 mm 0.5 mm 1.27 mm 2.54 mm
是否Rohs认证 符合 符合 - - 符合 符合 符合 -
零件包装代码 TSOP TSOP DIP DIP - TSOP QFJ DIP
包装说明 TSOP1-R, TSSOP32,.8,20 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32 DIP, DIP, - TSOP1, TSSOP32,.8,20 QCCJ, LDCC32,.5X.6 DIP,
针数 32 32 32 32 - 32 32 32
最长访问时间 120 ns 90 ns 90 ns 120 ns - 120 ns 120 ns 150 ns
JESD-30 代码 R-PDSO-G32 R-PDSO-G32 R-PDIP-T32 R-PDIP-T32 - R-PDSO-G32 R-PQCC-J32 R-PDIP-T32
长度 18.4 mm 18.4 mm 42.03 mm 42.03 mm - 18.4 mm 13.97 mm 42.03 mm
内存密度 524288 bit 524288 bi 524288 bit 524288 bit - 524288 bit 524288 bit 524288 bit
内存集成电路类型 FLASH FLASH FLASH FLASH - FLASH FLASH FLASH
内存宽度 8 8 8 8 - 8 8 8
功能数量 1 1 1 1 - 1 1 1
端子数量 32 32 32 32 - 32 32 32
字数 65536 words 65536 words 65536 words 65536 words - 65536 words 65536 words 65536 words
字数代码 64000 64000 64000 64000 - 64000 64000 64000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
组织 64KX8 64KX8 64KX8 64KX8 - 64KX8 64KX8 64KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP1-R TSOP1 DIP DIP - TSOP1 QCCJ DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE IN-LINE IN-LINE - SMALL OUTLINE, THIN PROFILE CHIP CARRIER IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL - PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 260 - 260 260 260
编程电压 12 V 12 V 12 V 12 V - 12 V 12 V 12 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 1.2 mm 5.08 mm 5.08 mm - 1.2 mm 3.55 mm 5.08 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V - 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V - 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V - 5 V 5 V 5 V
表面贴装 YES YES NO NO - YES YES NO
技术 CMOS CMOS CMOS CMOS - CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL - INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN - MATTE TIN MATTE TIN MATTE TIN
端子形式 GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE - GULL WING J BEND THROUGH-HOLE
端子位置 DUAL DUAL DUAL DUAL - DUAL QUAD DUAL
处于峰值回流温度下的最长时间 40 40 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED 40 NOT SPECIFIED
宽度 8 mm 8 mm 15.24 mm 15.24 mm - 8 mm 11.43 mm 15.24 mm
Base Number Matches 1 1 1 1 - 1 1 -
厂商名称 - - ON Semiconductor(安森美) ON Semiconductor(安森美) - ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)

 
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