FX30ASJ-03
High-Speed Switching Use
Pch Power MOS FET
REJ03G1445-0200
(Previous: MEJ02G0266-0101)
Rev.2.00
Aug 07, 2006
Features
•
•
•
•
•
Drive voltage : 4 V
V
DSS
: –30 V
r
DS(ON) (max)
: 61 mΩ
I
D
: –30 A
Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name: MP-3A)
3
4
1
12
3
1.
2.
3.
4.
Gate
Drain
Source
Drain
2, 4
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
Tch
Tstg
—
Ratings
–30
±20
–30
–120
–30
–30
–120
35
– 55 to +150
– 55 to +150
0.32
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Conditions
V
GS
= 0 V
V
DS
= 0 V
L = 10
µH
Typical value
Rev.2.00
Aug 07, 2006
page 1 of 6
FX30ASJ-03
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(th)
r
DS(ON)
r
DS(ON)
V
DS(ON)
| y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
SD
R
th(ch-c)
t
rr
Min
–30
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
–1.8
48
96
–0.72
11.9
2460
410
170
20
84
123
60
–1.0
—
50
Max
—
±0.1
–0.1
–2.3
61
120
–0.92
—
—
—
—
—
—
—
—
–1.5
3.57
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Test Conditions
I
D
= –1 mA, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= –30 V, V
GS
= 0 V
I
D
= –1 mA, V
DS
= –10 V
I
D
= –15 A, V
GS
= –10 V
I
D
= –5 A, V
GS
= – 4 V
I
D
= –15 A, V
GS
= –10 V
I
D
= –15 A, V
DS
= –10 V
V
DS
= –10 V, V
GS
= 0 V,
f = 1MHz
V
DD
= –15 V, I
D
= –15 A,
V
GS
= –10 V,
R
GEN
= R
GS
= 50
Ω
I
S
= –15 A, V
GS
= 0 V
Channel to case
I
S
= –15 A, d
is
/d
t
= 50 A/µs
Rev.2.00
Aug 07, 2006
page 2 of 6
FX30ASJ-03
Performance Curves
Power Dissipation Derating Curve
50
–2
Maximum Safe Operating Area
tw
Power Dissipation P
D
(W)
–10
2
Drain Current I
D
(A)
40
–7
–5
–3
–2
10
=
10
µ
s
s
0
µ
1m
s
30
D
–10
1
–7
–5
–3
–2
C
20
10
–10
0
–7
–5
Tc = 25°C
0
0
50
100
150
200
–3
Single Pulse
–2
–2 –3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5–7
–10
2
–2
Case Temperature Tc (°C)
Drain-Source Voltage V
DS
(V)
Output Characteristics (Typical)
–50
V
GS
=
–10V
Output Characteristics (Typical)
–20
V
GS
= –10V
–8V
–6V
–5V
P
D
= 35W
–4V
–7V
–8V
–6V
Drain Current I
D
(A)
–30
–5V
Drain Current I
D
(A)
–40
–16
–12
–20
–4V
–8
Tc = 25°C
Pulse Test
–3V
–10
Tc = 25°C
Pulse Test
0
–1.0
–2.0
–3.0
P
D
= 35W
–3V
–4
0
–4.0
–5.0
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Drain-Source On-State Voltage V
DS(ON)
(V)
Drain-Source On-State Resistance r
DS(ON)
(mΩ)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–5.0
On-State Resistance vs.
Drain Current (Typical)
200
Tc = 25°C
Pulse Test
–4.0
Tc = 25°C
Pulse Test
160
–3.0
I
D
= –50A
120
V
GS
= –4V
–2.0
–30A
80
–10V
–1.0
–15A
40
0
–10
–1
–2 –3 –5 –7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5 –7
–10
2
0
0
–2
–4
–6
–8
–10
Gate-Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00
Aug 07, 2006
page 3 of 6
FX30ASJ-03
Forward Transfer Admittance vs.
Drain Current (Typical)
Transfer Characteristics (Typical)
–50
Forward Transfer Admittance | yfs | (S)
Drain Current I
D
(A)
–40
Tc = 25°C
V
DS
= –10V
Pulse Test
2
10
2
7
5
4
3
2
V
DS
= –10V
Pulse Test
–30
75°C 125°C
T
C
=
25°C
–20
10
1
7
5
4
3
–10
0
0
–2
–4
–6
–8
–10
–10
0
2
–2 –3
–5 –7
–10
1
–2 –3 –5 –7
–10
2
Gate-Source Voltage V
GS
(V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
Drain Current I
D
(A)
Switching Characteristics (Typical)
10
3
7
5
4
3
2
t
d(off)
Capacitance C (pF)
3
2
Ciss
10
3
7
5
3
2
Coss
Crss
Switching Time (ns)
Tch = 25°C
10
4
f = 1MHz
7
5
V
GS
= 0V
Tch = 25°C
V
DD
= –15V
V
GS
= –10V
R
GEN
= R
GS
= 50Ω
10
2
7
5
4
3
2
t
f
10
2
7
5
3
2
–3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5–7
–10
2
–2 –3
t
r
t
d(on)
10
1
–5 –7
–10
0
–2 –3
–5 –7
–10
1
–2 –3
–5
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
–50
Drain Current I
D
(A)
Source-Drain Diode Forward
Characteristics (Typical)
V
GS
= 0V
Pulse Test
–40
Gate-Source Voltage V
GS
(V)
Tch = 25°C
I
D
= –30A
–8
Source Current I
S
(A)
–6
–30
–4
V
DS
= –10V
–20V
–25V
–20
T
C
=
25°C
75°C
125°C
–2
–10
0
0
10
20
30
40
50
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
Gate Charge Qg (nC)
Source-Drain Voltage V
SD
(V)
Rev.2.00
Aug 07, 2006
page 4 of 6
FX30ASJ-03
On-State Resistance vs.
Channel Temperature (Typical)
10
1
7
V
GS
= –10V
5
I
D
= –15A
4
Pulse Test
3
2
Drain-Source On-State Resistance r
DS(ON)
(25°C)
Gate-Source Threshold Voltage V
GS(th)
(V)
Drain-Source On-State Resistance r
DS(ON)
(t°C)
Threshold Voltage vs.
Channel Temperature (Typical)
–4.0
V
DS
= –10V
I
D
= –1mA
–3.2
–2.4
10
0
7
5
4
3
2
–1.6
–0.8
10
–1
–50
0
50
100
150
0
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Drain-Source Breakdown Voltage V
(BR)DSS
(25°C)
Transient Thermal Impedance Zth(ch–c) (°C/W)
Drain-Source Breakdown Voltage V
(BR)DSS
(t°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
Transient Thermal Impedance Characteristics
10
1
7
5 D=1
3
0.5
2
0.2
7 0.1
5
3
2
0.05
0.02
0.01
Single Pulse
P
DM
tw
T
D
=
tw
T
V
GS
= 0V
I
D
= –1mA
1.2
10
0
1.0
0.8
10
–1
7
5
3
2
0.6
0.4
–50
0
50
100
150
10
–2 –4
10
2 3 5 7
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Vin
Vin Monitor
D.U.T.
R
GEN
R
L
Vout
Monitor
Switching Waveform
10%
90%
90%
90%
R
GS
V
DD
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.2.00
Aug 07, 2006
page 5 of 6
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