mosfet N-CH 85v 100a TO-220
| IPP054NE8N G | IPP054NE8NGHKSA2 | IPB051NE8NGATMA1 | |
|---|---|---|---|
| 描述 | mosfet N-CH 85v 100a TO-220 | MOSFET N-CH 85V 100A TO-220 | Power Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 |
| 厂商名称 | - | Infineon(英飞凌) | Infineon(英飞凌) |
| 包装说明 | - | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | - | compliant | unknown |
| ECCN代码 | - | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | - | 826 mJ | 826 mJ |
| 配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | - | 85 V | 85 V |
| 最大漏极电流 (ID) | - | 100 A | 100 A |
| 最大漏源导通电阻 | - | 0.0054 Ω | 0.0051 Ω |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | - | TO-220AB | TO-263AB |
| JESD-30 代码 | - | R-PSFM-T3 | R-PSSO-G2 |
| 元件数量 | - | 1 | 1 |
| 端子数量 | - | 3 | 2 |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | FLANGE MOUNT | SMALL OUTLINE |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | - | 400 A | 400 A |
| 表面贴装 | - | NO | YES |
| 端子形式 | - | THROUGH-HOLE | GULL WING |
| 端子位置 | - | SINGLE | SINGLE |
| 晶体管应用 | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | - | SILICON | SILICON |
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