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T493X106J035AN6333

产品描述Tantalum Capacitor, Tantalum (dry/solid),
产品类别无源元件    电容器   
文件大小1MB,共26页
制造商KEMET(基美)
官网地址http://www.kemet.com
标准
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T493X106J035AN6333概述

Tantalum Capacitor, Tantalum (dry/solid),

T493X106J035AN6333规格参数

参数名称属性值
是否Rohs认证符合
Objectid7006608470
包装说明CHIP
Reach Compliance Codecompliant
Country Of OriginMexico
ECCN代码EAR99
YTEOL6.75
其他特性ESR IS MEASURED AT 100 KHZ
电容10 µF
电容器类型TANTALUM CAPACITOR
介电材料TANTALUM (DRY/SOLID)
ESR180 mΩ
高度4 mm
JESD-609代码e3
漏电流0.0035 mA
长度7.3 mm
安装特点SURFACE MOUNT
负容差5%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形式SMT
包装方法TR, Embossed Plastic, 7 Inch
极性POLARIZED
正容差5%
额定(直流)电压(URdc)35 V
尺寸代码2917
表面贴装YES
Delta切线0.04
端子面层Matte Tin (Sn) - with Nickel (Ni) barrier
端子形状J BEND
宽度4.3 mm

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Tantalum Surface Mount Capacitors – High Reliability
T493 High Reliability Alternative MnO
2
(CWR11 Style)
Overview
The KEMET T493 is designed for the High Reliability
Series (HRA) requirements of military and aerospace
applications. The T493 is a surface mount product,
offering various lead-frame plating options, Weibull grading
options, surge current testing, F-Tech (an improved anode
manufacturing process), and Simulated Breakdown Voltage
(SBDV) screening options to improve long term reliability.
Standard, low, and ultra-low ESR options are available.
All lots of T493 are conditioned with MIL-PRF-55365
Group A testing. This series is also approved for DLA
drawing 07016 (please see part number list specific to this
drawing).
KEMET’s F-Tech eliminates hidden defects in the dielectric,
which continue to grow in the field, causing capacitor
failures. Based on the fundamental understanding of
degradation mechanisms in tantalum and niobium
capacitors, F-Tech incorporates multiple process
methodologies. Some minimize the oxygen and carbon
content in the anodes, which become contaminants
and can lead to the crystallization of the anodic oxide
dielectric. This process methodology reduces the
contaminants, improving quality of the dielectric. An
additional technology provides a stronger mechanical
connection point between the tantalum lead wire and
tantalum anode, enhancing robustness and product
reliability. The benefit of F-Tech is illustrated by a 2,000
hour, 85°C, 1.32 X rated voltage accelerated life test.
F-Tech parts see no degradation while standard tantalums
have 1.5 orders of magnitude degradation in leakage
current. F-Tech is currently available for T493 Series
(select D and X case capacitance values in 25 V and
higher rated voltage). Please contact KEMET for details on
ordering other part types with these capabilities.
The KEMET patented Simulated Breakdown Screening (SBDS)
is a nondestructive testing technique that simulates the
breakdown voltage (BDV) of a capacitor, without the damage
to its dielectric or to the general population of capacitors.
This screening identifies hidden defects in the dielectric,
providing the highest level of dielectric testing. SBDS is
based on the simulation of breakdown voltage (BDV), the
ultimate test of the dielectric in a capacitor.
Low BDV indicates defects in the dielectric, and therefore, a
higher probability of failure in the field. High BDV indicates
a stronger dielectric and high-reliability performance in the
field. This new screening method allows KEMET to identify
the breakdown voltage of each individual capacitor and
provide only the strongest capacitors from each lot.
SBDS is currently available on select part types in the T493
and T497. Please contact KEMET for details on ordering other
part types with these capabilities.
KEMET offers these technologies per the following options:
• F-Tech only
• SBDS only
• Combination of both F-Tech and SBDS for the ultimate
protection
Click image above for interactive 3D content
Open PDF in Adobe Reader for full functionality
One world. One KEMET
© KEMET Electronics Corporation • KEMET Tower • One East Broward Boulevard
Fort Lauderdale, FL 33301 USA • 954-766-2800 • www.kemet.com
T2007_T493 • 2/14/2020
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