Preliminary
Datasheet
RJK0355DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 8.2 m
typ. (at V
GS
= 10 V)
Pb-free
REJ03G1649-0510
Rev.5.10
May 21, 2010
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Ratings
30
±20
30
120
30
9
8.1
25
5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1649-0510 Rev.5.10
May 21, 2010
Page 1 of 6
RJK0355DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
8.2
11.8
55
860
165
53
4.2
6.3
2.3
1.4
6.9
4.1
40.8
5.6
0.87
20
Max
—
± 0.1
1
2.5
10.7
16.5
—
—
—
—
—
—
—
—
—
—
—
—
1.14
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 15 A, V
GS
= 10 V
Note4
I
D
= 15 A, V
GS
= 4.5 V
Note4
I
D
= 15 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 30 A
V
GS
= 10 V, I
D
= 15 A
V
DD
10 V
R
L
= 0.66
Rg = 4.7
I
F
= 30 A, V
GS
= 0
Note4
I
F
=30 A, V
GS
= 0
di
F
/ dt = 100 A/
s
REJ03G1649-0510 Rev.5.10
May 21, 2010
Page 2 of 6
RJK0355DPA
Preliminary
Main Characteristics
Power vs. Temperature Derating
40
1000
Maximum Safe Operation Area
Pch (W)
I
D
(A)
30
100
1
10
10
Channel Dissipation
Drain Current
m
20
10
PW = 10 ms
Operation in
this area is
limited by R
DS(on)
s
0
μ
μ
s
s
DC
O
ra
pe
10
1
tio
n
0
50
100
150
200
Tc = 25°C
0.1 1 shot Pulse
0.1
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
20
4.5 V
10 V
3.2 V
Pulse Test
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
12
3.0 V
I
D
(A)
Drain Current
16
16
12
Drain Current
8
2.8 V
4
8
25°C
Tc = 75°C
–25°C
4
V
GS
= 2.6 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Static Drain to Source On State Resistance
R
DS (on)
(mΩ)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(mV)
200
Pulse Test
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
150
30
V
GS
= 4.5 V
10
10 V
3
100
I
D
= 10 A
50
5A
2A
0
4
8
12
16
20
1
1
3
10
30
100
300 1000
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
REJ03G1649-0510 Rev.5.10
May 21, 2010
Page 3 of 6
RJK0355DPA
Static Drain to Source On State Resistance
vs. Temperature
50
Pulse Test
10000
3000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source On State Resistance
R
DS (on)
(mΩ)
Capacitance C (pF)
40
1000
Ciss
300
100
30
V
GS
= 0
f = 1 MHz
10
20
Coss
Crss
30
I
D
= 2 A, 5 A, 10 A
20
V
GS
= 4.5 V
10
10 V
0
–25
0
25
50
2 A, 5 A, 10 A
75
100 125 150
10
0
30
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
20
50
Dynamic Input Characteristics
V
DS
(V)
50
40
V
DD
= 25 V
10 V
30
V
DS
16
Reverse Drain Current I
DR
(A)
I
D
= 30 A
V
GS
10 V
40
5V
Pulse Test
Drain to Source Voltage
12
Gate to Source Voltage
30
20
8
20
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
8
16
24
32
4
10
0
40
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
20
I
AP
= 9 A
V
DD
= 15 V
duty < 0.1 %
Rg
≥
50
Ω
16
12
8
4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1649-0510 Rev.5.10
May 21, 2010
Page 4 of 6
RJK0355DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
Preliminary
D=1
0.5
0.3
0.2
0.1
5
0.0
02
0.
01
0.
1s
se
0.1
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 5.0°C/W, Tc = 25°C
P
DM
PW
T
100
μ
1m
10 m
100 m
1
10
D=
PW
T
ul
0.03
0.01
10
μ
ho
tp
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D. U. T
I
D
Vin
15 V
50
Ω
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1649-0510 Rev.5.10
May 21, 2010
Page 5 of 6
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