电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MA4L784

产品描述Mixer Diode, L Band, Silicon, ML4-N1, 4 PIN
产品类别分立半导体    二极管   
文件大小176KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
下载文档 详细参数 选型对比 全文预览

MA4L784概述

Mixer Diode, L Band, Silicon, ML4-N1, 4 PIN

MA4L784规格参数

参数名称属性值
厂商名称Panasonic(松下)
包装说明R-PBCC-N4
针数4
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型MIXER DIODE
最大正向电压 (VF)0.55 V
频带L BAND
JESD-30 代码R-PBCC-N4
元件数量1
端子数量4
最高工作温度125 °C
最大输出电流0.1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式CHIP CARRIER
认证状态Not Qualified
最大重复峰值反向电压30 V
表面贴装YES
技术SCHOTTKY
端子形式NO LEAD
端子位置BOTTOM
Base Number Matches1

文档预览

下载PDF文档
Schottky Barrier Diodes (SBD)
MA4L784
Silicon epitaxial planar type
Unit: mm
For high speed switching
For small current rectification
3
2
0.020
±0.010
M
ain
Di
sc te
on na
tin nc
ue e/
d
I
Features
High-density mounting is possible
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
Low forward voltage V
F
and good rectification efficiency
1008-type mold leadless 4-pin package
4
1
1.00
±0.05
0.80
±0.05
0.60
±0.05
4
1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
R
I
F
Reverse voltage (DC)
Peak reverse voltage
V
RM
I
FM
T
j
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
T
stg
−55
to
+125
on
tin
Parameter
Symbol
I
R
ue
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
/D
V
F
C
t
t
rr
Note) 1. This product is sensitive to electric shock (static electricity, etc.).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: t
rr
measuring instrument
Ma
int
en
Bias Application Unit N-50BU
t
r
an
Reverse recovery time
*
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
3
0.30
±0.03
0.60
0.20
±0.03
2
0.05
±0.03
Rating
30
30
Unit
V
V
1 : Anode
2 : N.C.
3: Cathode
4 : Cathode
ML4-N1 Package
100
300
125
mA
mA
°C
°C
Marking Symbol: Y
Internal Connection
3
2
4
1
Conditions
Min
Typ
Max
15
Unit
µA
V
pF
ns
V
R
=
30 V
isc
I
F
=
100 mA
0.55
ce
V
R
=
0 V, f
=
1 MHz
20
I
F
=
I
R
=
100 mA
I
rr
=
10 mA, R
L
=
100
2.0
Input Pulse
t
p
10%
t
I
F
Output Pulse
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.50
0.05
±0.03
Publication date: July 2001
SKH00101AED
1

MA4L784相似产品对比

MA4L784 MA4L78400A
描述 Mixer Diode, L Band, Silicon, ML4-N1, 4 PIN DIODE SCHOTTKY 30V 100MA ML4N1
二极管类型 MIXER DIODE 肖特基

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1509  1415  1961  409  527  18  8  27  15  17 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved