IC QUAD, PARALLEL, WORD INPUT LOADING, 10 us SETTLING TIME, 12-BIT DAC, CDIP28, SIDE BRAZED, CERAMIC, DIP-28, Digital to Analog Converter
| 参数名称 | 属性值 |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 28 |
| Reach Compliance Code | compliant |
| ECCN代码 | 3A001.A.2.C |
| 最大模拟输出电压 | 13 V |
| 最小模拟输出电压 | |
| 转换器类型 | D/A CONVERTER |
| 输入位码 | BINARY |
| 输入格式 | PARALLEL, WORD |
| JESD-30 代码 | R-CDIP-T28 |
| 最大线性误差 (EL) | 0.0244% |
| 标称负供电电压 | -15 V |
| 位数 | 12 |
| 功能数量 | 4 |
| 端子数量 | 28 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 认证状态 | Qualified |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 5.72 mm |
| 标称安定时间 (tstl) | 10 µs |
| 标称供电电压 | 15 V |
| 表面贴装 | NO |
| 技术 | BICMOS |
| 温度等级 | MILITARY |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 15.24 mm |
| Base Number Matches | 1 |
| 5962-8871901MXX | 5962-8871903MYX | 5962-8871902MXX | |
|---|---|---|---|
| 描述 | IC QUAD, PARALLEL, WORD INPUT LOADING, 10 us SETTLING TIME, 12-BIT DAC, CDIP28, SIDE BRAZED, CERAMIC, DIP-28, Digital to Analog Converter | IC QUAD, PARALLEL, WORD INPUT LOADING, 10 us SETTLING TIME, 12-BIT DAC, CQCC44, CERAMIC, LCC-44, Digital to Analog Converter | IC QUAD, PARALLEL, WORD INPUT LOADING, 10 us SETTLING TIME, 12-BIT DAC, CDIP28, SIDE BRAZED, CERAMIC, DIP-28, Digital to Analog Converter |
| 零件包装代码 | DIP | LCC | DIP |
| 包装说明 | DIP, | QCCN, | DIP, |
| 针数 | 28 | 44 | 28 |
| Reach Compliance Code | compliant | compliant | compliant |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最大模拟输出电压 | 13 V | 13 V | 13 V |
| 最小模拟输出电压 | - | -13 V | -13 V |
| 转换器类型 | D/A CONVERTER | D/A CONVERTER | D/A CONVERTER |
| 输入位码 | BINARY | BINARY | BINARY |
| 输入格式 | PARALLEL, WORD | PARALLEL, WORD | PARALLEL, WORD |
| JESD-30 代码 | R-CDIP-T28 | S-CQCC-N44 | R-CDIP-T28 |
| 最大线性误差 (EL) | 0.0244% | 0.0244% | 0.0244% |
| 标称负供电电压 | -15 V | -15 V | -15 V |
| 位数 | 12 | 12 | 12 |
| 功能数量 | 4 | 4 | 4 |
| 端子数量 | 28 | 44 | 28 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | QCCN | DIP |
| 封装形状 | RECTANGULAR | SQUARE | RECTANGULAR |
| 封装形式 | IN-LINE | CHIP CARRIER | IN-LINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 认证状态 | Qualified | Qualified | Qualified |
| 筛选级别 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 |
| 座面最大高度 | 5.72 mm | 2.54 mm | 5.72 mm |
| 标称安定时间 (tstl) | 10 µs | 10 µs | 10 µs |
| 标称供电电压 | 15 V | 15 V | 15 V |
| 表面贴装 | NO | YES | NO |
| 技术 | BICMOS | BICMOS | BICMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | NO LEAD | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 1.27 mm | 2.54 mm |
| 端子位置 | DUAL | QUAD | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 15.24 mm | 16.5354 mm | 15.24 mm |
| Base Number Matches | 1 | 1 | 1 |
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