Product Concept for High Current PROFET
Full Exploitation of the chip on chip technology
•
•
•
The cost performance ratio ( $/Siemens ) of base chip as a descrete transistor
Control IC enables the smart functions
Flexible combination of IC chip and base chip allows the adoption of the
newest technology and three products
Improvements of assembly technology
•
•
Soldering of maximal die sizes in the TO218 and TO220
Two (outer) pins for the output and multiple stitching wire bonding
Expansion of high current testing competance
•
Development of high power source of 1000A, new contact unit and load board
Power Semiconductors
HL LH
Dr. Xu
05/97
Structure of High Current PROFET
Power Semiconductors
HL LH
Dr. Xu
05/97
High Current PROFET Family
High Side
Load
Type
V
DS(AZ
)
[V]
R
on(max)
Current Sense
[mOhm]
Ratio
I
L-SC(typ)
[A]
400
280
170
Package
BTS 555 P
BTS 550 P
BTS 650 P
50
50
50
3.5
5.0
8.0
25 000
20 000
15 000
TO-218/5
TO-218/5
TO-220/7
Availability: End of´96
Current controlled PROFET
Simplifies current monitoring
by a sense current proportional
to the load current
Power Semiconductors
HL LH
Dr. Xu
05/97
Main Features and Functional Diagram of High Current PROFET
Main Features
R
3 & Tab
+ V bb
bb
• High side switch
• Extremly low on-resistance
• Capability of handling
very high load currents
• Forward and inverse operation
with the extremly low on-resistance
• Conduction of power MOSFET
in reverse battery
• Analog current sense
• Current control input
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
Voltage
sensor
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
OUT
1&5
I
L
2
IN
Load
ESD
Logic
I
IN
Temperature
sensor
IS
I
IS
®
PROFET
Load GND
V
IN
V
IS
Logic GND
4
R
IS
Power Semiconductors
HL LH
Dr. Xu
05/97
Current Limition for High Current Applications
I
L
[A]
900
800
700
600
500
400
300
200
100
0
0
5
10
15
20
T
j
= -40°C
25°C
85°C
150°C
Current Limit Characteristics
• No current limitation at Vds < 5 V
-> Very high load current allowed
• Output current limited at Vds > 5 V
• Current decreases with temperature
V
DS
[V]
Power Semiconductors
HL LH
Dr. Xu
05/97
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