ESD Diodes
MAZZ000H Series
Silicon planar type
Unit: mm
For surge absorption circuit
s
Features
•
Four elements anode-common type
•
P
tot
=
200 mW
2.0
±0.1
(0.65) (0.65)
5
4
0.7
±0.1
1.25
±0.1
2.1
±0.1
1
2
3
0.2
±0.05
5˚
0.16
+0.1
–0.06
5˚
s
Absolute Maximum Ratings
T
a
=
25°C
(0.15)
Total power dissipation
*
Junction temperature
Storage temperature
P
tot
T
j
T
stg
200
150
−55
to
+150
mW
°C
°C
Note) *: With a printed circuit board (Four elements in total)
1: Cathode 1
3: Cathode 2
2: Anode 1, 2
4: Cathode 3
Anode 3, 4
5: Cathode 4
SMini5-F1 Package
Internal Connection
5
4
1
0 to 0.1
Parameter
Symbol
Rating
Unit
2
3
s
Common Electrical Characteristics
T
a
=
25°C
*1
Parameter
Zener voltage
*2
Zener knee operating resistance
Zener operating resistance
Reverse current
Symbol
V
Z
R
ZK
R
Z
I
R
I
Z
I
Z
I
Z
V
R
Conditions
Specified value
Specified value
Specified value
Specified value
Refer to the list of the
electrical characteristics
within part numbers
Min
Typ
Max
Unit
V
Ω
Ω
µA
Note) 1. Test method according to the JIS C7031 testing
2. Electrostatic breakdown voltage is
±10
kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330
Ω,
Contact discharge: 10 times)
3. *1: The V
Z
value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
*2: Guaranteed at 20 ms after power application.
(0.425)
Publication date: February 2002
SKE00015BED
1
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and semiconductors described in this material
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istics and applied circuit examples of the products. It does not constitute the warranting of industrial
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•
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2001 MAR
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