电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

TN2540N3-P003-G

产品描述mosfet 小信号 400v 12ohm
产品类别半导体    分立半导体   
文件大小658KB,共6页
制造商Supertex
标准
下载文档 选型对比 全文预览

TN2540N3-P003-G概述

mosfet 小信号 400v 12ohm

文档预览

下载PDF文档
TN2540
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN2540
Package Options
TO-92
TN2540N3-G
TO-243AA (SOT-89)
TN2540N8-G
Die*
TN2540ND
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
V
GS(th)
(max)
(V)
400
12
1.0
2.0
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available
Pin Configurations
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300 C
O
DRAIN
GATE
GATE
SOURCE
DRAIN
TO-92 (N3)
TO-243AA (SOT-89) (N8)
Product Marking
TN
2 5 4 0
YYWW
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
TN5DW
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89) (N8)
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

TN2540N3-P003-G相似产品对比

TN2540N3-P003-G TN2540N3-P014 TN2540N3-P003 TN2540N3-P002-G TN2540N3-P013 TN2540N3-P014-G TN2540N3-P002 TN2540N3-P013-G
描述 mosfet 小信号 400v 12ohm mosfet 小信号 400v 12ohm mosfet 小信号 400v 12ohm mosfet 小信号 400v 12ohm mosfet 小信号 400v 12ohm mosfet 小信号 400v 12ohm mosfet 小信号 400v 12ohm mosfet 小信号 400v 12ohm
厂商名称 - Supertex Supertex Supertex Supertex Supertex Supertex Supertex
产品种类 - MOSFET 小信号 MOSFET 小信号 MOSFET 小信号 MOSFET 小信号 MOSFET 小信号 MOSFET 小信号 MOSFET 小信号
RoHS -
配置 - Single Single Single Single Single Single Single
晶体管极性 - N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
电阻汲极/源极 RDS(导通) - 12 Ohms 12 Ohms 12 Ohms 12 Ohms 12 Ohms 12 Ohms 12 Ohms
汲极/源极击穿电压 - 400 V 400 V 400 V 400 V 400 V 400 V 400 V
闸/源击穿电压 - +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V
漏极连续电流 - 175 mA 175 mA 175 mA 175 mA 175 mA 175 mA 175 mA
功率耗散 - 1 W 1 W 1 W 1 W 1 W 1 W 1 W
最大工作温度 - + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C
安装风格 - Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
封装 / 箱体 - TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
最小工作温度 - - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1506  526  6  2579  335  40  52  17  37  26 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved