TN2540
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►
►
►
►
►
►
►
►
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
►
►
►
►
►
►
►
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN2540
Package Options
TO-92
TN2540N3-G
TO-243AA (SOT-89)
TN2540N8-G
Die*
TN2540ND
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
V
GS(th)
(max)
(V)
400
12
1.0
2.0
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available
Pin Configurations
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300 C
O
DRAIN
GATE
GATE
SOURCE
DRAIN
TO-92 (N3)
TO-243AA (SOT-89) (N8)
Product Marking
TN
2 5 4 0
YYWW
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
TN5DW
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89) (N8)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
TN2540
Thermal Characteristics
Package
TO-92
TO-243AA (SOT-89)
(continuous)
(mA)
I
D
†
(pulsed)
(A)
I
D
Power Dissipation
@T
A
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
†
I
DRM
(A)
175
260
2.0
1.8
0.74
1.6
‡
125
15
170
78
‡
175
260
2.0
1.8
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Gate threshold voltage
A
= 25
O
C unless otherwise specified)
Min
400
0.6
-
-
-
Typ
-
-
-2.5
-
-
-
0.5
1.0
8.0
8.0
-
200
95
20
10
-
-
-
-
-
300
Max
-
2.0
-4.0
100
10
1.0
-
-
12
12
0.75
-
125
70
25
20
15
25
20
1.8
-
Units
V
V
nA
µA
mA
A
Ω
%/
O
C
Conditions
V
GS
= 0V, I
D
= 100µA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 150mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 1.0A,
R
GEN
= 25Ω
Drain-to-source breakdown voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
mV/
O
C V
GS
= V
DS
, I
D
= 1.0mA
-
0.3
0.75
-
-
-
125
-
-
-
-
-
-
-
-
-
On-state drain current
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
mmho V
DS
= 25V, I
D
= 100mA
pF
ns
V
ns
V
GS
= 0V, I
SD
= 200mA
V
GS
= 0V, I
SD
= 1.0A
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
V
DD
PULSE
GENERATOR
R
L
OUTPUT
90%
10%
t
(ON)
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
F
10%
t
d(ON)
V
DD
R
GEN
10%
90%
D.U.T.
INPUT
OUTPUT
0V
90%
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
TN2540
Typical Performance Curves
°
°
°
°
°
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
TN2540
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
1.1
50
On-Resistance vs. Drain Current
40
V
GS
= 4.5V
B V
D S S
( norma liz e d)
R
D S ( O N )
( o
hms )
V
GS
= 10V
30
1.0
20
10
0.9
-50
0
50
100
150
0
0
0.4
0.8
1.2
1.6
2.0
T
j
(
°
C)
Transfer Characteristics
1.5
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
2.5
1.4
V
DS
= 25V
1.2
R
DS(ON)
10V, 0.5A
@
2.0
I
D
( a mpe re s )
T
A
= -55
°
C
0.9
1.2
1.5
1.0
1.0
0.8
0.5
0.6
0
0.6
25
°C
0.3
125
°C
0
2
4
6
8
10
-50
0
50
100
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
200
10
T
j
(
°
C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
150
V
DS
= 10V
C ( pic ofa ra ds )
V
G S
( volts )
6
100
C
ISS
4
V
DS
= 40V
50
2
260 pF
0
0
C
RSS
10
20
30
C
OSS
0
40
0
95pF
0.4
0.8
1.2
1.6
2.0
V
DS
(volts)
Q
G
(nanocoulombs)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
R
D S ( O N )
( norma liz e d)
V
G S ( th)
( norma liz e d)
V
(th)
1mA
@
TN2540
3-Lead TO-92 Package Outline (N3)
D
A
Seating Plane
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version D080408.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
5
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
