SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 3 - JULY 1995
PARTMARKING DETAILS BCW29 - C1
BCW30 - C2
BCW29R - C4
BCW30R - C5
COMPLEMENTARY TYPES BCW29 - BCW31
BCW30 - BCW32
BCW29
BCW30
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
PARAMETER
SYMBOL
V
BE
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-30
-30
-20
-5
-100
330
-55 to +150
SOT23
UNIT
V
V
V
A
A
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
MIN.
-600
-80
-150
-720
-810
-100
-10
120
215
90
150
150
7
10
260
500
MHz
pF
dB
TYP.
MAX. UNIT
-750
250
mV
mV
mV
mV
mV
µ
A
CONDITIONS.
Base - Emitter Voltage
I
C
=-2mA, V
CE
=- 5V
I
C
=-10mA, I
B
= - 0.5mA
I
C
=-50mA, I
B
=-2.5mA
I
C
=-10mA, I
B
=-0.5mA
I
C
=-50mA, I
B
=-2.5mA
I
E
=0, V
CB
=-20V
I
E
=0,VCB=-20V,
T
j =
100
o
C
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
IC=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-10mA, V
CE
=-5V
f = 35MHz
I
E
=I
e
=0, V
CB
=-10V
f= 1MHz
I
C
= -200mA, V
CE
=-5V
R
S
=2K
Ω
, f=1KHz
B= 200Hz
Collector-Emitter Saturation V
CE(SAT)
Voltage
Base-Emitter Saturation
Voltage
Collector- Base Cut-Off
Current
Static Forward
Current
Transfer
Ratio
Transition Frequency
Collector Capacitance
Noise Figure
BCW29
BCW30
V
BE(SAT)
I
CBO
h
FE
h
FE
f
T
C
TC
N
nA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
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