PT480E00000F
PT480E00000F
Phototransistor
■
Features
1.
2.
3.
4.
5.
Side view detection type
Plastic mold with resin lens
Narrow directivity angle
Transparent resin
Lead free and RoHS directive component
■
Agency Approvals/Compliance
1. Compliant with RoHS directive (2002/95/EC)
2. Content information about the six substances
specified in “Management Methods for Control of
Pollution Caused by Electronic Information Prod-
ucts Regulation” (popular name: China RoHS)
(Chinese:
);
refer to page 8
■
Applications
1.
2.
3.
4.
5.
6.
7.
8.
9.
Optoelectronic switches
Automatic stroboscopes
Office automation equipment
Audio visual equipment
Home appliances
Telecommunication equipment
Measuring equipment
Tooling machines
Computers
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D1-A01901EN
Date Marcch 30, 2007
©SHARP Corporation
PT480E00000F
■
Outline Dimensions
2.95
2.15
R0.8
±0.1
2-C0.5
0.5 MAX.
Gate
burr
3.0
4°
1.5
1.15
0.75
4°
0.5
φ1.5
E. PIN
R0.5
4.0
0.15 MAX.
4°
4°
60°
0.15
1.0 MAX.
resin
burr
(1.7)
1.4
2 - 0.87
0.2 MAX.
Resin
burr
+1.5
17.5
-1.0
2 - 0.4
-0.1
+0.3
2 - 0.45
-0.1
+0.3
(2.54)
0.5 MIN.
1.6
(6°)
(6°)
(6°)
(6°)
Terminal connection
1
2
Pin Arrangement
1
(6°)
2.8
(6°)
2
No.
1
Name
Emitter
Collector
2
NOTES:
1. Units: mm
2. Unspecified tolerence: ±0.2 mm
3. ( ): Reference dimensions
4. Package: Transparent epoxy resin
5. The thin
burr
thickness and the gate
burr
(0.5 mm MAX.) are not included in outline dimensions
6. Resin protrusion: 1.0 mm MAX. however, the thin
burr
adheres to the lead 1.4 MAX. from the resin
Sheet No.: D1-A01901EN
2
PT480E00000F
■
Absolute Maximum Ratings
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Soldering temperature *1
Symbol
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Tsol
35
6
20
75
-25 to +85
-40 to +85
260
(Ta = 25°C)
Rating
Unit
V
V
mA
mW
°C
°C
°C
*
1 5 s (MAX.) positioned 1/4 mm from resin edge. see Figure 13
■
Electro-optical Charactertistics
Parameter
Collector current
Dark current
Collector-emitter saturation voltage
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Peak sensitivity wavelength
Response time (Rise)
Response time (Fall)
Symbol
I
C
I
CEO
V
CE(sat)
BV
CEO
BV
ECO
λp
tr
tf
Conditions *1
Ee = 1 mW/cm
2
, V
CE
= 5 V
Ee = 0, V
CE
= 20 V
Ee = 10 mW/cm
2
, I
C
= 0.5 mA
I
C
= 0.1 mA, Ee = 0
I
E
= 0.01 mA, Ee = 0
–
V
CE
= 2 V, I
C
= 2 mA,
RL = 100
Ω
MIN.
0.4
–
–
35
6.0
–
–
–
TYP.
1.7
1.0
0.1
–
–
800
3.0
3.5
MAX.
6.0
100
0.4
–
–
–
–
–
(Ta = 25°C)
Unit
mA
nA
V
V
V
nm
µs
µs
*
1 Ee: Irradiance by CIE standard light source A (tungsten lamp)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Collector power dissipation Pc (mW)
80
75
70
Fig. 2 Spectral Sensitivity
Ta = 25°C
100
90
80
Relative sensitivity (%)
70
60
50
40
30
20
60
50
40
30
20
15
10
0
-25
10
0
400
0
25
50
75
85
100
500
600
700
800
900
1,000 1,100
wavelength
λ
(nm)
Ambient temperature Ta (°C)
Sheet No.: D1-A01901EN
3
PT480E00000F
Fig. 3 Sensitivity Diagram
(Ta = 25°C)
-20°
-10°
0°
+10°
100
-30°
80
Relative sensitivity (%)
+30°
+20°
Fig. 5 Relative Collector Current vs.
Ambient Temperature
160
140
Relative collector current (%)
120
100
80
60
40
20
0
V
CE
= 5
V
Ee = 1 mW/cm
2
-40°
60
+40°
-50°
-60°
-70°
-80°
-90°
40
+50°
+60°
20
+70°
+80°
+90°
0
10
20
30
40
50
60
70
0
Angular displacement
θ
Ambient temperature Ta (°C)
Fig. 4 Collector Dark Current vs.
Ambient Temperature
10
-6
5
V
CE
= 20
V
Collector dark current I
CEO
(A)
Fig. 6 Collector Current vs. Irradience
20
10
Collector current I
C
(mA)
V
CE
= 5
V
Ta = 25°C
5
2
10
-7
5
2
10
-8
5
2
10
-9
5
2
10
-10
0
25
50
75
100
Ambient temperature Ta (°C)
2
1
0.5
0.2
0.1
0.1
0.2
0.5
1
2
5
10
20
Irradiance Ee (mW/cm
2
)
Sheet No.: D1-A01901EN
4
PT480E00000F
Fig. 7 Collector Current vs.
Collector-Emitter Voltage
2.0
Ta = 25°C
1.8
1.6
Collector current I
C
(mA)
Fig. 9 Test Circuit to Determine
Response Time
Input
Ee
W
/cm
1.0 m
=
2
Output
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5
10
15
m
m
W
/c
0.75
2
V
CC
R
L
Output
90%
10%
/cm
0.5 m
W
2
tr
tf
0.25 mW/cm
2
Fig. 10 Collector-to-Emitter Saturation
Voltage vs. Irradience
I
C
= 0.1 mA
Collector-emitter saturation
voltage V
CE (sat)
(V)
0.5 mA
1 mA
2 mA
1.4
Ta = 25°C
0.1 mW/cm
2
20
25
30
35
40
1.2
1.0
0.8
0.6
0.4
0.2
Collector-emitter
voltage V
CE
(V)
Fig. 8 Response Time vs.
Load Resistance
100
50
V
CE
= 2
V
I
C
= 2 mA
Ta = 25°C
Response time tr, tf (µs)
20
10
tr
tf
0
0.05
0.1
0.2
0.5
1
2
5
10
Irradiance Ee (mW/cm
2
)
5
tf
tr
Fig. 11 Relative Output vs Distance
100
50
2
1
0.1
20
0.2
0.5
1
2
5
10
Relative output (%)
10
5
Load resistance R
L
(kΩ)
2
1
0.5
0.2
0.5
1
2
5
10
20
50
Distance
between
emitter and detector (mm)
Sheet No.: D1-A01901EN
5
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