Applications
• Low loss, high power
switches
• Low distortion
attenuators
SMP1302-085LF: Surface Mount PIN Diode
for High Power Switch Applications
The SMP1302-085LF is a surface mountable, low capacitance silicon PIN diode in a low
thermal resistance QFN-2, 2 x 2 mm plastic package. The SMP1302-085LF is designed
as a shunt connected PIN diode for high power, high volume switch and attenuator
applications from 10 MHz to beyond 6 GHz. Maximum resistance at 100 mA is 1.5 W
and maximum capacitance at 30 V is 0.3 pF.
The combination of low junction capacitance, low parasitic inductance, low thermal
resistance and nominal 50 μm I region width, makes these diodes useful in large signal
switches and attenuator applications.
With its 3 W dissipation power rating the SMP1302-085LF is capable of handling more
than 50 W CW and 500 W peak (1 μs pulse, 1% duty cycle), in a shunt connected T-R
switch. The SMP1302 is described in a 41 dBm T-R switch designed at 2 GHz which
operated with low loss, high isolation and low distortion.
Design information for high power switches may be found in the Skyworks Application
Note
Design with PIN Diodes.
The 085 package is lead (Pb)-free and fully complies with Skyworks definition of Green:
it meets all current RoHS requirements and contains no antimony (Sb) and no halogens,
such as bromine (Br).
Features
• Low profile,
ultraminiature 2 x 2 mm
QFN surface mount
package with exposed
paddle
• Low thermal resistance
(40 °C/W)
• Suitable for 50 W CW
T-R switches
• Low capacitance
(0.3 pF)
• Low distortion
performance
• Lead (Pb)-Free, Green™,
fully compliant with
RoHS requirements
• ESD Class 1C, human
body model
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Operating Characteristics
T = 25 °C, unless otherwise noted
Parameter
Reverse current
Capacitance
Resistance
Resistance
Forward voltage
Carrier lifetime
I-Region width
CW thermal resistance
Pulse thermal resistance
Symbol
I
R
C
T30
R
S10
R
S100
V
F
T
L
W
Q
JC
Q
P
Single 1 µs pulse
3.5
V
R
= 200 V
V
R
= 30 V, f = 1 MHz
I
F
= 10 mA, f = 100 MHz
I
F
= 100 mA, f = 100 MHz
I
F
= 10 mA
I
F
= 10 mA
1.0
0.8
700
50
40
Condition
Min.
Typ.
Max.
10
0.3
3
1.5
Unit
µA
pF
W
W
V
ns
µm
°C/W
°C/W
Typical Performance Data @ 25 °C, unless otherwise noted
1000
0.8
0.7
Series Resistance (W)
Capacitance (pF)
100
0.6
0.5
0.4
0.3
0.2
0.1
1 MHz
10
1
100 MHz
1 GHz
0.1
0.01
0.1
1
10
100
0
0
1
2
5
10
20
50
100
Forward Current (mA)
Series Resistance vs. Current @ 100
@
Series Resistance vs. Current
MHz
100 MHz
Reverse Voltage (V)
Capacitance vs. Reverse Voltage
Capacitance vs. Reverse Voltage
35
Pulse Thermal Impedance (°C/W)
Absolute Maximum Ratings
Characteristic
Reverse voltage
Forward current at 25 °C
CW power dissipation at 25 °C
1µs pulse power dissipation
Storage temperature range
Operating temperature range
Value
200 V
1.5 A
3W
30 W
-65 °C to +200 °C
-40 °C to +150 °C
30
25
20
15
10
5
0
1
10
100
1000
Pulse Width (µs)
Typical Pulse Thermal Impedance
Typical Pulse Thermal Impedance
Performance is guaranteed only under the conditions listed in the specifications table and is
not guaranteed under the full range(s) described by the Absolute Maximum specifications.
Exceeding any of the absolute maximum/minimum specifications may result in permanent
damage to the device and will void the warranty.
T-R Switch Performance
Frequency
Insertion loss (Tx-ANT)
Insertion loss (ANT-Rx)
Isolation (Rx-Tx)
Isolation (Tx-Rx)
0.1 dB Tx compression
1.0 dB Tx compression
Tx-Rx IIP3
Tx CW input power
Tx Peak input power
(2)
Rx CW input power
Tx-Rx switching speed
(1)
Tx input return loss
Rx input return loss
2010-2025 GHz
0.42 dB
0.45 dB
37 dB
37.8dB
46 dBm (Pulsed)
>50 dBm (Pulsed)
>80 dBm
41 dBm
>49.5 dBm
41 dBM
<0.85 µs
27.8 dB
28.8 dB
High Power Switch Design Application
A T-R switch incorporating SMP1302 PIN diodes covering
2.0155 GHz to 2.0195 GHz has been designed and
tested. The switch operated safely at transmitter power
of 41dBm CW (12.6 W) with low insertion loss (0.42 dB)
and high receiver isolation (37 dB). 1 dB compression
occurred at higher than 50 dBm. In the receive state the
switch performed with 0.45 dB insertion loss and 37.8 dB
transmitter isolation.
The circuit is based on a quarter wave design utilizing two
shunt connected SMP1302 diodes. In the transmit state
the Bias 1 is set at 0 mA and Bias 2 is set at 50 mA; in the
receive state Bias 1 is set at 50 mA and Bias 2 is set at 0 mA.
1. Based on complementary pulsed bias current waveforms under RF conditions.
2. Measured with 8 µs RF pulse width, 0.5% duty cycle, 50
W
ANT load.
3. F1 = 2.0155 GHz @ 10 dBm, F2 = 2.0195 GHz @ 10 dBm.
T-R Switch Circuit Diagram
Bias 1
RF
Bypass
Bias 2
RF
Bypass
RF
Choke
Antenna Port
RF
Choke
DC
Block
Transmitter
Port
λ/4
DC
Block
DC
Block
λ/4
DC
Block
Receiver
Port
SMP1302-085LF
SMP1302-085LF
S1631
Microstrip Mount
Land Pattern
2X 0.60
Part Outline
SMP1302-085LF
Exposed Soldering
Area Typ.
2X 0.27
2X 0.55
Thermal Via
Pin 1
Pin 2
R0.20
2X 0.25
Pin 3
2X 0.85
Outline Drawing
3
1
Application Notes
For additional information, please refer to the
following Application Notes.
Solder Reflow Information
Discrete Devices and IC Switch/Attenuators Tape
and Reel Package Orientation
2 ± 0.2
2
RF1
2 ± 0.2
Orientation
Indicator
0.88 ± 0.1
0.5 ± 0.15
Exposed Pad
Detail B
1.7 ± 0.15
3
2
1
0.4 ± 0.1
0.27 ± 0.15
Detail B
Note: Dimensions are in millimeters.
Green Initiative
™
™
Through our Green Initiative, we are committed to manufacturing products that comply with global
government directives and industry requirements.
Skyworks is continuously innovating RF, analog and mixed-signal ICs. For the latest product introductions and
information about Skyworks, visit our Web site at
www.skyworksinc.com
For additional information on our broad overall product portfolio, please contact your local sales office or email us at
sales@skyworksinc.com.
Skyworks Solutions, Inc.
20 Sylvan Road, Woburn, MA 01801
USA: (781) 376-3000 • Asia: 886 2 2735 0399 x 990
Europe: 33 (0)1 41443660 • Fax: (781) 376-3100
Email: sales@skyworksinc.com •
www.skyworksinc.com
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