MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT25AS-8
STROBE FLASHER USE
CT25AS-8
OUTLINE DRAWING
6.5
5.0 ± 0.2
4
Dimensions in mm
5.5 ± 0.2
1.5 ± 0.2
0.5 ± 0.1
1.0MAX.
1.0
0.9MAX.
2.3MIN.
10MAX.
0.5 ± 0.2
2.3
2.3
0.8
2.3
1
2
3
wr
q
GATE
w
COLLECTOR
e
EMITTER
r
COLLECTOR
e
q
¡V
CES ................................................................................
400V
¡I
CM ....................................................................................
150A
MP-3
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS
Symbol
V
CES
V
GES
V
GEM
I
CM
T
j
T
stg
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
Conditions
V
GE
= 0V
V
CE
= 0V, See notice 4
V
CE
= 0V, tw = 0.5s
See figure 1
Ratings
400
±30
±40
150
–40 ~ +150
–40 ~ +150
Unit
V
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
I
CES
I
GES
V
GE(th)
Parameter
(Tj = 25°C)
Test conditions
I
C
= 1mA, V
GE
= 0V
V
CE
= 400V, V
GE
= 0V
V
GE
=
±40V,
V
CE
= 0V
V
CE
= 10V, I
C
= 1mA
Limits
Min.
450
—
—
—
Typ.
—
—
—
—
Max.
—
10
±0.1
7.0
Unit
V
µA
µA
V
Feb.1999
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT25AS-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT
200
C
M
= 400µF
160
T
C
<
50°C
=
PULSE COLLECTOR CURRENT I
CM
(A)
120
80
<
T
C
=
70°C
40
0
0
10
20
30
40
50
GATE-EMITTER VOLTAGE V
GE
(V)
Figure 1
APPLICATION EXAMPLE
TRIGGER Vtrig
SIGNAL
IXe
C
M
Vtrig
+
–
V
CM
IGBT GATE V
G
VOLTAGE
R
G
V
CE
V
G
IGBT
Xe TUBE
CURRENT
Ixe
RECOMMEND CONDITION
V
CM
= 330V
I
P
= 130A
C
M
= 300µF
V
GE
= 28V
MAXIMUM CONDITION
350V
150A
400µF
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
And reverse gate current during turn-off must be kept less than 1A.
(In general, it is satisfied if R
G
≥
30Ω)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to suffer from electrostatic charge.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(I
xe
≤
150A : full luminescence condition) of main condenser (C
M
=400µF).
Repetition period under full luminescence condition is over 3 seconds.
Notice 4. Total operation hours must be applied within 5,000 hours.
Feb.1999
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